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PMEG1201AESFYL

P1-P3P4-P6P7-P9P10-P12P13-P14
NXP Semiconductors
PMEG1201AESF
12 V, 0.1 A low VF MEGA Schottky barrier rectifier
PMEG1201AESF All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 13 February 2015 4 / 14
aaa-006823
t
p
(s)
10
-3
10
2
10
3
10110
-2
10
-1
10
2
10
3
Z
th(j-a)
(K/W)
10
duty cycle =
1
0.75
0.5
0.33 0.25
0.2
0.1
0.05
0
0.02
0.01
FR4 PCB, standard footprint
Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-006824
t
p
(s)
10
-3
10
2
10
3
10110
-2
10
-1
10
2
10
3
Z
th(j-a)
(K/W)
10
duty cycle =
1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
FR4 PCB, mounting pad for anode and cathode 1 cm
2
each
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NXP Semiconductors
PMEG1201AESF
12 V, 0.1 A low VF MEGA Schottky barrier rectifier
PMEG1201AESF All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 13 February 2015 5 / 14
aaa-006825
t
p
(s)
10
-3
10
2
10
3
10110
-2
10
-1
10
2
Z
th(j-a)
(K/W)
10
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
Ceramic PCB, Al
2
O
3
, standard footprint
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NXP Semiconductors
PMEG1201AESF
12 V, 0.1 A low VF MEGA Schottky barrier rectifier
PMEG1201AESF All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 13 February 2015 6 / 14
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
(BR)R
reverse breakdown
voltage
I
R
= 1000 µA; t
p
= 300 µs; δ = 0.02;
T
j
= 25 °C
12 - - V
I
F
= 0.1 mA; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 20 60 mV
I
F
= 1 mA; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 70 110 mV
I
F
= 10 mA; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 130 170 mV
I
F
= 20 mA; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 150 190 mV
I
F
= 30 mA; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 160 200 mV
V
F
forward voltage
I
F
= 100 mA; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
- 210 250 mV
V
R
= 5 V; T
j
= 25 °C; pulsed - 240 1000 µA
V
R
= 10 V; T
j
= 25 °C; pulsed - 370 1500 µA
I
R
reverse current
V
R
= 12 V; T
j
= 25 °C; pulsed - 430 2000 µA
V
R
= 1 V; f = 1 MHz; T
j
= 25 °C - 26 - pFC
d
diode capacitance
V
R
= 10 V; f = 1 MHz; T
j
= 25 °C - 10 - pF
t
rr
reverse recovery time I
F
= 200 mA; I
R
= 200 mA;
I
R(meas)
= 40 mA; T
j
= 25 °C
- 2.2 - ns
P1-P3P4-P6P7-P9P10-P12P13-P14

PMEG1201AESFYL

Mfr. #:
Buy PMEG1201AESFYL
Manufacturer:
Nexperia
Description:
Schottky Diodes & Rectifiers 12V 0.1A MEGA Schottky
Lifecycle:
New from this manufacturer.
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