NXP Semiconductors
PMEG1201AESF
12 V, 0.1 A low VF MEGA Schottky barrier rectifier
PMEG1201AESF All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 13 February 2015 8 / 14
aaa-013232
V
R
(V)
0 1284
100
150
50
200
250
P
R(AV)
(mW)
0
(1)
(2)
(3)
(4)
T
j
= 85 °C
(1) δ = 1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
Fig. 8. Average reverse power dissipation as a
function of reverse voltage; typical values
T
amb
(°C)
0 15010050
aaa-013233
50
100
150
I
F(AV)
(mA)
0
(1)
(2)
(3)
(4)
FR4 PCB, standard footprint
T
j
= 125 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 9. Average forward current as a function of
ambient temperature; typical values
T
amb
(°C)
0 15010050
aaa-013234
50
100
150
I
F(AV)
(mA)
0
(1)
(2)
(3)
(4)
FR4 PCB, mounting pad for anode and cathode
1 cm
2
each
T
j
= 125 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 10. Average forward current as a function of
ambient temperature; typical values
T
amb
(°C)
0 15010050
aaa-013235
50
100
150
I
F(AV)
(mA)
0
(1)
(2)
(3)
(4)
Ceramic PCB, Al
2
O
3
, standard footprint
T
j
= 125 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 11. Average forward current as a function of
ambient temperature; typical values
