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NCV8405ASTT3G

P1-P3P4-P6P7-P9P10-P12
© Semiconductor Components Industries, LLC, 2016
November, 2016 − Rev. 5
1 Publication Order Number:
NCV8405/D
NCV8405A, NCV8405B
Self-Protected Low Side
Driver with Temperature
and Current Limit
NCV8405A/B is a three terminal protected Low−Side Smart
Discrete device. The protection features include overcurrent,
overtemperature, ESD and integrated Drain−to−Gate clamping for
overvoltage protection. This device is suitable for harsh automotive
environments.
Features
• Short−Circuit Protection
• Thermal Shutdown with Automatic Restart
• Overvoltage Protection
• Integrated Clamp for Inductive Switching
• ESD Protection
• dV/dt Robustness
• Analog Drive Capability (Logic Level Input)
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Switch a Variety of Resistive, Inductive and Capacitive Loads
• Can Replace Electromechanical Relays and Discrete Circuits
• Automotive / Industrial
www.onsemi.com
*Max current limit value is dependent on input
condition.
SOT−223
CASE 318E
STYLE 3
MARKING
DIAGRAM
V
(BR)DSS
(Clamped)
R
DS(ON)
TYP
I
D
MAX
42 V
90 mW @ 10 V
6.0 A*
A = Assembly Location
Y = Year
W, WW = Work Week
xxxxx = 8405A or 8405B
G or G = Pb−Free Package
1
(Note: Microdot may be in either location)
1
AYW
xxxxx G
G
23
4
GATE
DRAIN
SOURCE
DRAIN
2
3
4
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
ORDERING INFORMATION
Drain
Source
Temperature
Limit
Gate
Input
Current
Limit
Current
Sense
Overvoltage
Protection
ESD Protection
1
2
3
4
DPAK
CASE 369C
YWW
xxxxxG
NCV8405A, NCV8405B
www.onsemi.com
2
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage Internally Clamped V
DSS
42 V
Drain−to−Gate Voltage Internally Clamped (R
G
= 1.0 MW)
V
DGR
42 V
Gate−to−Source Voltage V
GS
"14 V
Continuous Drain Current I
D
Internally Limited
Power Dissipation − SOT−223 Version
@ T
A
= 25°C (Note 1)
@ T
A
= 25°C (Note 2)
@ T
S
= 25°C
Power Dissipation − DPAK Version
@ T
A
= 25°C (Note 1)
@ T
A
= 25°C (Note 2)
@ T
S
= 25°C
P
D
1.0
1.7
11.4
2.0
2.5
40
W
Thermal Resistance − SOT−223 Version
Junction−to−Ambient Steady State (Note 1)
Junction−to−Ambient Steady State (Note 2)
Junction−to−Soldering Point Steady State
Thermal Resistance − DPAK Version
Junction−to−Ambient Steady State (Note 1)
Junction−to−Ambient Steady State (Note 2)
Junction−to−Soldering Point Steady State
R
q
JA
R
q
JA
R
q
JS
R
q
JA
R
q
JA
R
q
JS
130
72
11
60
50
3.0
°C/W
Single Pulse Drain−to−Source Avalanche Energy
(V
DD
= 40 V, V
G
= 5.0 V, I
PK
= 2.8 A, L = 80 mH, R
G(ext)
= 25 W, TJ = 25°C)
E
AS
275 mJ
Load Dump Voltage V
LD
= V
A
+ V
S
(V
GS
= 0 and 10 V, R
I
= 2.0 W, R
L
= 6.0 W, t
d
= 400 ms)
V
LD
53 V
Operating Junction Temperature T
J
−40 to 150 °C
Storage Temperature T
stg
−55 to 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Surface−mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06″ thick).
2. Surface−mounted onto 2″ sq. FR4 board (1″ sq., 1 oz. Cu, 0.06″ thick).
DRAIN
SOURCE
GATE
VDS
VGS
I
D
I
G
+
−
+
−
Figure 1. Voltage and Current Convention
NCV8405A, NCV8405B
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter
Test Condition Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(Note 3)
V
GS
= 0 V, I
D
= 10 mA, T
J
= 25°C
V
(BR)DSS
42 46 51
V
V
GS
= 0 V, I
D
= 10 mA, T
J
= 150°C
(Note 5)
42 45 51
Zero Gate Voltage Drain Current
V
GS
= 0 V, V
DS
= 32 V, T
J
= 25°C
I
DSS
0.5 2.0
mA
V
GS
= 0 V, V
DS
= 32 V, T
J
= 150°C
(Note 5)
2.0 10
Gate Input Current V
DS
= 0 V, V
GS
= 5.0 V I
GSSF
50 100
mA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS
= V
DS
, I
D
= 150 mA
V
GS(th)
1.0 1.6 2.0 V
Gate Threshold Temperature Coefficient V
GS(th)
/T
J
4.0 −mV/°C
Static Drain−to−Source On−Resistance
V
GS
= 10 V, I
D
= 1.4 A, T
J
= 25°C
R
DS(on)
90 100
mW
V
GS
= 10 V, I
D
= 1.4 A, T
J
= 150°C
(Note 5)
165 190
V
GS
= 5.0 V, I
D
= 1.4 A, T
J
= 25°C
105 120
V
GS
= 5.0 V, I
D
= 1.4 A, T
J
= 150°C
(Note 5)
185 210
V
GS
= 5.0 V, I
D
= 0.5 A, T
J
= 25°C
105 120
V
GS
= 5.0 V, I
D
= 0.5 A, T
J
= 150°C
(Note 5)
185 210
Source−Drain Forward On Voltage V
GS
= 0 V, I
S
= 7.0 A V
SD
1.05 V
SWITCHING CHARACTERISTICS (Note 5)
Turn−ON Time (10% V
IN
to 90% I
D
)
V
GS
= 10 V, V
DD
= 12 V
I
D
= 2.5 A, R
L
= 4.7 W
t
ON
20
ms
Turn−OFF Time (90% V
IN
to 10% I
D
) t
OFF
110
Slew−Rate ON (70% V
DS
to 50% V
DS
)
V
GS
= 10 V, V
DD
= 12 V,
R
L
= 4.7 W
−dV
DS
/dt
ON
1.0
V/ms
Slew−Rate OFF (50% V
DS
to 70% V
DS
) dV
DS
/dt
OFF
0.4
SELF PROTECTION CHARACTERISTICS (T
J
= 25°C unless otherwise noted) (Note 4)
Current Limit
V
DS
= 10 V, V
GS
= 5.0 V, T
J
= 25°C
I
LIM
6.0 9.0 11
A
V
DS
= 10 V, V
GS
= 5.0 V, T
J
= 150°C
(Note 5)
3.0 5.0 8.0
V
DS
= 10 V, V
GS
= 10 V, T
J
= 25°C
7.0 10.5 13
V
DS
= 10 V, V
GS
= 10 V, T
J
= 150°C
(Note 5)
4.0 7.5 10
Temperature Limit (Turn−off)
V
GS
= 5.0 V (Note 5)
T
LIM(off)
150 180 200
°C
Thermal Hysteresis
V
GS
= 5.0 V
DT
LIM(on)
15
Temperature Limit (Turn−off)
V
GS
= 10 V (Note 5)
T
LIM(off)
150 165 185
Thermal Hysteresis
V
GS
= 10 V
DT
LIM(on)
15
GATE INPUT CHARACTERISTICS (Note 5)
Device ON Gate Input Current
V
GS
= 5 V I
D
= 1.0 A
I
GON
50
mA
V
GS
= 10 V I
D
= 1.0 A
400
Current Limit Gate Input Current
V
GS
= 5 V, V
DS
= 10 V
I
GCL
0.05
mA
V
GS
= 10 V, V
DS
= 10 V
0.4
Thermal Limit Fault Gate Input Current
V
GS
= 5 V, V
DS
= 10 V
I
GTL
0.22
mA
V
GS
= 10 V, V
DS
= 10 V
1.0
ESD ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted) (Note 5)
Electro−Static Discharge Capability
Human Body Model (HBM)
ESD
4000
V
Machine Model (MM) 400
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Fault conditions are viewed as beyond the normal operating range of the part.
5. Not subject to production testing.
P1-P3P4-P6P7-P9P10-P12

NCV8405ASTT3G

Mfr. #:
Buy NCV8405ASTT3G
Manufacturer:
ON Semiconductor
Description:
Gate Drivers SELF PROTECTED LOW SIDE F
Lifecycle:
New from this manufacturer.
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