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NCV8405ASTT3G

P1-P3P4-P6P7-P9P10-P12
NCV8405A, NCV8405B
www.onsemi.com
4
TYPICAL PERFORMANCE CURVES
8 V
1
10
10 100
Figure 2. Single Pulse Maximum Switch−off
Current vs. Load Inductance
L (mH)
I
L(max)
(A)
T
Jstart
= 25°C
T
Jstart
= 150°C
10
100
1000
10 1
00
Figure 3. Single Pulse Maximum Switching
Energy vs. Load Inductance
L (mH)
E
max
(mJ)
T
Jstart
= 25°C
T
Jstart
= 150°C
1
10
100
110
Figure 4. Single Pulse Maximum Inductive
Switch−off Current vs. Time in Clamp
TIME IN CLAMP (ms)
I
L(max)
(A)
T
Jstart
= 25°C
T
Jstart
= 150°C
10
100
1000
11
0
Figure 5. Single Pulse Maximum Inductive
Switching Energy vs. Time in Clamp
TIME IN CLAMP (ms)
E
max
(mJ)
T
Jstart
= 25°C
T
Jstart
= 150°C
Figure 6. Output Characteristics
V
DS
= 10 V
25°C
100°C
150°C
−40°C
I
D
(A)
V
GS
(V)
Figure 7. Transfer Characteristics
V
DS
(V)
I
D
(A)
V
GS
= 2.5 V
3 V
4 V
5 V
6 V
10 V
T
A
= 25°C
0
2
4
6
8
10
12
14
012345
7 V
9 V
0
2
4
6
8
10
12
1234
5
NCV8405A, NCV8405B
www.onsemi.com
5
TYPICAL PERFORMANCE CURVES
Figure 8. R
DS(on)
vs. Gate−Source Voltage
V
GS
(V)
R
DS(on)
(m
W
)
150°C, I
D
= 0.5 A
150°C, I
D
= 1.4 A
100°C, I
D
= 0.5 A
100°C, I
D
= 1.4 A
25°C, I
D
= 0.5 A
25°C, I
D
= 1.4 A
−40°C, I
D
= 0.5 A
−40°C, I
D
= 1.4 A
Figure 9. R
DS(on)
vs. Drain Current
I
D
(A)
R
DS(on)
(mW)
V
GS
= 5 V
V
GS
= 10 V
I
D
= 1.4 A
Figure 10. Normalized R
DS(on)
vs. Temperature
T (°C)
R
DS(on)
(VGS = 5 V, TJ = 25
°
C)(NORMALIZED)
25°C
100°C
150°C
−40°C
Figure 11. Current Limit vs. Gate−Source
Voltage
V
GS
(V)
I
LIM
(A)
V
DS
= 10 V
Figure 12. Current Limit vs. Junction
Temperature
T
J
(°C)
I
LIM
(A)
V
DS
= 10 V
V
GS
= 5 V
V
GS
= 10 V
Figure 13. Drain−to−Source Leakage Current
V
DS
(V)
I
DSS
(mA)
V
GS
= 0 V
25°C
100°C
150°C
−40°C
50
100
150
200
250
300
345678910
50
70
90
110
130
150
170
190
210
−40°C, V
GS
= 5 V
−40°C, V
GS
= 10 V
0.5 1 1.5 2 2.5 3 3.5 4 4.5
5
25°C, V
GS
= 5 V
25°C, V
GS
= 10 V
100°C, V
GS
= 5 V
100°C, V
GS
= 10 V
150°C, V
GS
= 10 V
150°C, V
GS
= 10 V
0.5
0.75
1.0
1.25
1.5
1.75
2.0
−40 −20 0 20 40 60 80 100 120 140
3
5
7
9
11
13
15
56789
10
4
6
8
10
12
14
−40 −20 0 20 40 60 80 100 120 140 160
0.001
0.01
0.1
1
10
10 15 20 25 30 35 4
0
NCV8405A, NCV8405B
www.onsemi.com
6
TYPICAL PERFORMANCE CURVES
DRAIN−SOURCE VOLTAGE SLOPE (V/ms)
0.6
0.7
0.8
0.9
1
1.1
1.2
−40 −20 0 20 40 60 80 100 120 140
Figure 14. Normalized Threshold Voltage vs.
Temperature
T (°C)
NORMALIZED V
GS(th)
(V)
I
D
= 150 mA
V
GS
= V
DS
Figure 15. Body−Diode Forward
Characteristics
I
S
(A)
V
SD
(V)
25°C
100°C
150°C
−40°C
V
GS
= 0 V
t
d(off)
t
d(on)
t
f
t
r
Figure 16. Resistive Load Switching Time vs.
Gate−Source Voltage
V
GS
(V)
TIME (
m
s)
I
D
= 2.5 A
V
DD
= 12 V
R
G
= 0 W
Figure 17. Resistive Load Switching
Drain−Source Voltage Slope vs. Gate−Source
Voltage
V
GS
(V)
DRAIN−SOURCE VOLTAGE SLOPE (V/ms)
I
D
= 2.5 A
V
DD
= 12 V
R
G
= 0 W
−dV
DS
/d
t(on)
dV
DS
/d
t(off)
TIME (
m
s)
Figure 18. Resistive Load Switching Time vs.
Gate Resistance
R
G
(W)
t
f
, (V
GS
= 10 V)
t
f
, (V
GS
= 5 V)
t
d(off)
, (V
GS
= 10 V)
t
r
, (V
GS
= 5 V)
t
d(off)
, (V
GS
= 5 V)
t
r
, (V
GS
= 10 V)
t
d(on)
, (V
GS
= 5 V)
t
d(on)
, (V
GS
= 10 V)
I
D
= 2.5 A
V
DD
= 12 V
dV
DS
/d
t(off)
, V
GS
= 5 V
−dV
DS
/d
t(on)
, V
GS
= 10 V
−dV
DS
/d
t(on)
, V
GS
= 5 V
dV
DS
/d
t(off)
, V
GS
= 10 V
Figure 19. Drain−Source Voltage Slope during
Turn On and Turn Off vs. Gate Resistance
R
G
(W)
I
D
= 2.5 A
V
DD
= 12 V
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
123456789
10
0
50
100
150
200
345678910
0.000
0.500
1.000
1.500
34567891
0
0
25
50
75
100
125
0 200 400 600 800 1000 1200 1400 1600 1800 2000
−0.1
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0 500 1000 1500 2
00
P1-P3P4-P6P7-P9P10-P12

NCV8405ASTT3G

Mfr. #:
Buy NCV8405ASTT3G
Manufacturer:
ON Semiconductor
Description:
Gate Drivers SELF PROTECTED LOW SIDE F
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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