BAT41ZFILM

P1-P3 P4-P6 P7-P9 P10-P12

October 2009 Doc ID 12633 Rev 2 1/12

12

BAT41

Low capacitance small signal Schottky diodes

Features

■ Low leakage current losses

■ Negligible switching losses

■ Low forward and reverse recovery times

■ Extremely fast switching

■ Surface mount device

■ Low capacitance diode

Description

The BAT41 series uses 100 V Schottky barrier

diodes packaged in SOD-123, SOD-323,

SOD-523, SOT-323, or SOT-666. This series is

specially suited for switching mode with low I

R

losses

Table 1. Device summary

Symbol Value

I

F

200 mA

V

RRM

100 V

C(typ) 3 pF

T

j

(max) 150 °C

SOD-123

SOD-323

SOD-523

SOT-666

BAT41ZFILM

(Single)

BAT41JFILM

(Single)

BAT41KFILM

(Single)

BAT41WFILM

(Single)

BAT41CWFILM

(Common cathode)

BAT41AWFILM

(Common anode)

BAT41SWFILM

(Series)

BAT41-07P6FILM

(2 parallel diodes)

BAT41-09P6FILM

(2 opposite diodes)

SOT-323

Configurations in top view

www.st.com

Characteristics BAT41

2/12 Doc ID 12633 Rev 2

1 Characteristics

Table 2. Absolute ratings (limiting values at T

j

= 25 °C, unless otherwise specified)

Symbol Parameter Value Unit

V

RRM

Repetitive peak reverse voltage 100 V

I

F

Continuous forward current 200 mA

I

FSM

Surge non repetitive forward current t

p

= 10 ms Sinusoidal 1 A

T

stg

Storage temperature range -65 to +150 °C

T

j

Maximum operating junction temperature 150 °C

Table 3. Thermal parameters

Symbol Parameter Value Unit

R

th(j-a)

Junction to ambient

(1)

1. Epoxy printed circuit board with recommended pad layout

SOD-123 500

°C/WSOT-323, SOD-323 550

SOD-523, SOT-666 600

Table 4. Static electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

R

(1)

1. Pulse test: t

p

= 5 ms, δ < 2 %

Reverse leakage current

T

j

= 25 °C

V

R

= 50 V

0.1

µA

T

j

= 100 °C 20

V

F

(2)

2. Pulse test: t

p

= 380 µs, δ < 2 %

Forward voltage drop T

j

= 25 °C

I

F

= 1 mA 400 450 mV

I

F

= 200 mA 1000

Table 5. Dynamic characteristics

Symbol Parameter

Test conditions

Min. Typ. Max. Unit

C Diode capacitance V

R

= 1 V, F = 1 MHz 3 10 pF

BAT41 Characteristics

Doc ID 12633 Rev 2 3/12

Figure 1. Average forward power dissipation

versus average forward current

Figure 2. Average forward current versus

ambient temperature (δ = 1)

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

0.22

0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 0.22 0.24

P(W)

T

δ

=tp/T

tp

δ = 1

δ = 0.05

I (A)

F(AV)

δ = 0.5

δ = 0.2

δ = 0.1

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

0.22

0 25 50 75 100 125 150

I (A)

F(AV)

T (°C)

amb

T

δ

=tp/T

tp

Figure 3. Reverse leakage current versus

reverse applied voltage

(typical values)

Figure 4. Reverse leakage current versus

junction temperature

(typical values)

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

0 20406080100

I (µA)

R

V (V)

R

T =25°C

j

T =125°C

j

T =100°C

j

T =75°C

j

T =50°C

j

T =150°C

j

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

0 25 50 75 100 125 150

I (µA)

R

T (°C)

j

V =50V

R

Figure 5. Junction capacitance versus

reverse applied voltage

(typical values)

Figure 6. Forward voltage drop versus

forward current (typical values)

0.1

1.0

10.0

1.0 10.0 100.0

C(pF)

V (V)

R

F=1MHz

V =30mV

T =25°C

OSC RMS

j

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3

I (A)

FM

V (V)

FM

T =75°C

j

T =-40°C

j

P1-P3 P4-P6 P7-P9 P10-P12

BAT41ZFILM

Mfr. #:

Manufacturer:

STMicroelectronics

Description:

Schottky Diodes & Rectifiers schottky diode

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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