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MBRD1035CTLT4G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2016
June, 2017 − Rev. 12
1 Publication Order Number:
MBRD1035CTL/D
MBRD1035CTL,
NRVBD1035VCTL,
SBRD81035CTL Series
Switch-mode
Schottky Power Rectifier
DPAK Power Surface Mount Package
The MBRD1035CTL employs the Schottky Barrier principle in a
large area metal−to−silicon power diode. State of the art geometry
features epitaxial construction with oxide passivation and metal
overlay contact. Ideally suited for low voltage, high frequency
switching power supplies, free wheeling diode and polarity protection
diodes.
Features
• Highly Stable Oxide Passivated Junction
• Guardring for Stress Protection
• Matched Dual Die Construction −
May be Paralleled for High Current Output
• High dv/dt Capability
• Short Heat Sink Tap Manufactured − Not Sheared
• Very Low Forward Voltage Drop
• Epoxy Meets UL 94 V−0 @ 0.125 in
• SBRD8 and NRVBD Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 0.4 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• ESD Rating:
♦ Human Body Model = 3B (> 8 kV)
♦ Machine Model = C (> 400 V)
SCHOTTKY BARRIER
RECTIFIER
10 AMPERES
35 VOLTS
1
3
4
DPAK
CASE 369C
MARKING DIAGRAM
www.onsemi.com
AYWW
B10
35CLG
A = Assembly Location*
Y = Year
WW = Work Week
B1035CL = Device Code
G = Pb−Free Package
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
* The Assembly Location Code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter
pin), the front side assembly code may be blank.
MBRD1035CTL, NRVBD1035VCTL, SBRD81035CTL Series
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
35 V
Average Rectified Forward Current
(At Rated V
R
, T
C
= 115°C)
Per Leg
Per Package
I
O
5.0
10
A
Peak Repetitive Forward Current
(At Rated V
R
, Square Wave, 20 kHz, T
C
= 115°C)
Per Leg
I
FRM
10
A
Non−Repetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
Per Package
I
FSM
50
A
Storage / Operating Case Temperature T
stg,
T
c
−55 to +150 °C
Operating Junction Temperature (Note 1) T
J
−55 to +150 °C
Voltage Rate of Change (Rated V
R
, T
J
= 25°C) dv/dt 10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
q
JA
.
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal Resistance, Junction−to−Case
Per Leg
R
q
JC
3.0
°C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
Per Leg
R
q
JA
137
°C/W
2. Rating applies when using minimum pad size, FR4 PC Board
ELECTRICAL CHARACTERISTICS
Rating Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 3) (See Figure 2)
Per Leg
(I
F
= 5 Amps, T
J
= 25°C)
(I
F
= 5 Amps, T
J
= 100°C)
(I
F
= 10 Amps, T
J
= 25°C)
(I
F
= 10 Amps, T
J
= 100°C)
V
F
0.47
0.41
0.56
0.55
V
Maximum Instantaneous Reverse Current (Note 3) (See Figure 4)
Per Leg
(V
R
= 35 V, T
J
= 25°C)
(V
R
= 35 V, T
J
= 100°C)
(V
R
= 17.5 V, T
J
= 25°C)
(V
R
= 17.5 V, T
J
= 100°C)
I
R
2.0
30
0.20
5.0
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%
MBRD1035CTL, NRVBD1035VCTL, SBRD81035CTL Series
www.onsemi.com
3
ORDERING INFORMATION
Device Package Shipping
†
MBRD1035CTLG
DPAK
(Pb−Free)
75 Units / Rail
SBRD81035CTLG* 75 Units / Rail
SBRD81035CTLG−VF01* 75 Units / Rail
MBRD1035CTLT4G 2,500 Units / Tape & Reel
NRVBD1035VCTLT4G* 2,500 Units / Tape & Reel
SBRD81035CTLT4G* 2,500 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*SBRD8 and NRVBD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable.
TYPICAL CHARACTERISTICS
Figure 1. Typical Forward Voltage Per Leg Figure 2. Maximum Forward Voltage Per Leg
Figure 3. Typical Reverse Current Per Leg
1.100.10
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
100
10
V
R
, REVERSE VOLTAGE (VOLTS)
350
100E-6
1E-6
I
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
I
1.0
0.500.30 0.70 0.90
10 20 30
10E-3
100E-3
0.1
, REVERSE CURRENT (AMPS)
R
1E-3
10E-6
T
J
= 25°C
T
J
= 100°C
T
J
= 125°C
T
J
= - 40°C
T
J
= 125°C
Figure 4. Maximum Reverse Current Per Leg
1.100.10
V
F
, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
100
10
I
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
1.0
0.500.30 0.70 0.90
0.1
T
J
= 25°C
T
J
= 100°C
T
J
= 125°C
1E+0
T
J
= 100°C
T
J
= 25°C
V
R
, REVERSE VOLTAGE (VOLTS)
350
100E-6
1E-6
10 20 30
10E-3
100E-3
1E-3
10E-6
T
J
= 125°C
1E+0
T
J
= 100°C
T
J
= 25°C
I , MAXIMUM REVERSE CURRENT (AMPS)
R
P1-P3P4-P6

MBRD1035CTLT4G

Mfr. #:
Buy MBRD1035CTLT4G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 10A 35V Low Vf
Lifecycle:
New from this manufacturer.
Delivery:
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