MBRD1035CTLT4G

MBRD1035CTL, NRVBD1035VCTL, SBRD81035CTL Series
www.onsemi.com
4
Figure 5. Current Derating Per Leg Figure 6. Forward Power Dissipation Per Leg
Figure 7. Capacitance Per Leg
1200
T
L
, LEAD TEMPERATURE (°C)
8.0
7.0
5.0
6.0
4.0
V
R
, DC REVERSE VOLTAGE (VOLTS)
250
105
85
75
65
0
V
R
, REVERSE VOLTAGE (VOLTS)
100
10
I
O
, AVERAGE FORWARD CURRENT (AMPS)C, CAPACITANCE (pF)
3.0
2.0
1.0
6020 40 80 100 140
30 355101520
95
115
125
510152025
0
T
J
, DERATED OPERATING TEMPERATURE ( C)
1000
T
J
= 25°C
freq = 20 kHz
I
pk
/I
o
= p
I
pk
/I
o
= 20
dc
SQUARE WAVE
(50% DUTY CYCLE)
I
O
, AVERAGE FORWARD CURRENT (AMPS)
1.00
4.0
3.0
2.0
1.0
0
2.0
P
FO
, AVERAGE POWER DISSIPATION (WATTS)
3.0 4.0 5.0 6.0 7.0 8.0
3.5
2.5
1.5
0.5
I
pk
/I
o
= 20
SQUARE WAVE
(50% DUTY CYCLE)
dc
Figure 8. Typical Operating Temperature
Derating Per Leg *
I
pk
/I
o
= 10
I
pk
/I
o
= 5
I
pk
/I
o
= 10
I
pk
/I
o
= 5
I
pk
/I
o
= p
°
R
q
JA
= 84°C/W
R
q
JA
= 67.5°C/W
R
q
JA
= 48°C/W
R
q
JA
= 25°C/W
R
q
JA
= 2.43°C/W
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of T
J
therefore must include forward and reverse power effects. The allowable operating
T
J
may be calculated from the equation: T
J
= T
Jmax
r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable T
J
due to reverse bias under DC conditions only and is calculated as T
J
= T
Jmax
r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
MBRD1035CTL, NRVBD1035VCTL, SBRD81035CTL Series
www.onsemi.com
5
Figure 9. Thermal Response Junction to Case (Per Leg)
Figure 10. Thermal Response Junction to Ambient (Per Leg)
0.10.00001
t, TIME (s)
1.0
0.1
0.01
r
0.0001 0.001 0.01
, TRANSIENT THERMAL RESISTANCE (NORMALIZED)
(t)
1.0
10 100 1000
50%(DUTY CYCLE)
20%
10%
5.0%
2.0%
1.0%
R
tjl(t)
= R
tjl
r
(t)
0.10.00001
t, TIME (s)
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
0.0001 0.001 0.01 1.0
10 100 10000
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
1.0%
SINGLE PULSE
r , TRANSIENT THERMAL RESISTANCE (NORMALIZED)
(t)
1000
SINGLE PULSE
R
tjl(t)
= R
tjl
r
(t)
MBRD1035CTL, NRVBD1035VCTL, SBRD81035CTL Series
www.onsemi.com
6
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
5.80
0.228
2.58
0.102
1.60
0.063
6.20
0.244
3.00
0.118
6.17
0.243
ǒ
mm
inches
Ǔ
SCALE 3:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
b
D
E
b3
L3
L4
b2
M
0.005 (0.13) C
c2
A
c
C
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73
A 0.086 0.094 2.18 2.38
b 0.025 0.035 0.63 0.89
c2 0.018 0.024 0.46 0.61
b2 0.028 0.045 0.72 1.14
c 0.018 0.024 0.46 0.61
e 0.090 BSC 2.29 BSC
b3 0.180 0.215 4.57 5.46
L4 −−− 0.040 −−− 1.01
L 0.055 0.070 1.40 1.78
L3 0.035 0.050 0.89 1.27
Z 0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
12 3
4
H 0.370 0.410 9.40 10.41
A1 0.000 0.005 0.00 0.13
L1 0.114 REF 2.90 REF
L2 0.020 BSC 0.51 BSC
A1
HDETAIL A
SEATING
PLANE
A
B
C
L1
L
H
L2
GAUGE
PLANE
DETAIL A
ROTATED 90 CW5
e
BOTTOM VIEW
Z
BOTTOM VIEW
SIDE VIEW
TOP VIEW
ALTERNATE
CONSTRUCTIONS
NOTE 7
Z
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MBRD1035CTLT4G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 10A 35V Low Vf
Lifecycle:
New from this manufacturer.
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