Data Sheet ADG5419
Rev. A | Page 3 of 19
SPECIFICATIONS
±15 V DUAL SUPPLY
V
DD
= +15 V ± 10%, V
SS
= −15 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1.
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range V
DD
to V
SS
V
On Resistance, R
ON
13.5 Ω typ V
S
= ±10 V, I
S
= −10 mA; see Figure 27
15 19 23 Ω max V
DD
= +13.5 V, V
SS
= −13.5 V
On-Resistance Match Between Channels,
∆R
ON
0.1 Ω typ V
S
= ±10 V, I
S
= −10 mA
0.8 1.3 1.4 Ω max
On-Resistance Flatness, R
FLAT (ON)
1.8 Ω typ V
S
= ±10 V, I
S
= −10 mA
2.2 2.7 3.1 Ω max
LEAKAGE CURRENTS V
DD
= +16.5 V, V
SS
= −16.5 V
Source Off Leakage, I
S
(Off) ±0.1 nA typ V
S
= ±10 V, V
D
=
10 V; see Figure 24 and
Figure 25
±0.25 ±1 ±10 nA max
Drain Off Leakage, I
D
(Off) ±0.1 nA typ V
S
= ±10 V, V
D
=
10 V; see Figure 25
±0.4 ±4 ±10 nA max
Channel On Leakage, I
D
(On), I
S
(On) ±0.1 nA typ V
S
= V
D
= ±10 V; see Figure 24 and
Figure 26
±0.4 ±4 ±10 nA max
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.8 V max
Input Current, I
INL
or I
INH
0.002 μA typ V
IN
= V
GND
or V
DD
±0.1 μA max
Digital Input Capacitance, C
IN
6 pF typ
DYNAMIC CHARACTERISTICS
1
Transition Time, t
TRANSITION
217 ns typ R
L
= 300 Ω, C
L
= 35 pF
260 310 336 ns max V
S
= 10 V; see Figure 32
t
ON
(EN) 179 ns typ R
L
= 300 Ω, C
L
= 35 pF
212 261 298 ns max V
S
= 10 V; see Figure 33
t
OFF
(EN) 153 ns typ R
L
= 300 Ω, C
L
= 35 pF
176 195 209 ns max V
S
= 10 V; see Figure 33
Break-Before-Make Time Delay, t
D
86 ns typ R
L
= 300 Ω, C
L
= 35 pF
45 ns min V
S
= 10 V; see Figure 34
Charge Injection, Q
INJ
130 pC typ V
S
= 0 V, R
S
= 0 Ω, C
L
= 1 nF; see Figure 35
Off Isolation −60 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 29
Channel-to-Channel Crosstalk −80 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 28
Total Harmonic Distortion + Noise 0.01 % typ R
L
= 1 kΩ, 15 V p-p, f = 20 Hz to 20 kHz; see
Figure 30
−3 dB Bandwidth 190 MHz typ R
L
= 50 Ω, C
L
= 5 pF; see Figure 31
Insertion Loss −0.8 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 31
C
S
(Off) 12 pF typ V
S
= 0 V, f = 1 MHz
C
D
(Off) 23 pF typ V
S
= 0 V, f = 1 MHz
C
D
(On), C
S
(On) 55 pF typ V
S
= 0 V, f = 1 MHz
POWER REQUIREMENTS V
DD
= +16.5 V, V
SS
= −16.5 V
I
DD
45 μA typ Digital inputs = 0 V or V
DD
55 70 μA max
I
SS
0.001 μA typ Digital inputs = 0 V or V
DD
1 μA max
V
DD
/V
SS
±9/±22 V min/V max GND = 0 V
1
Guaranteed by design; not subject to production test.
ADG5419 Data Sheet
Rev. A | Page 4 of 19
±20 V DUAL SUPPLY
V
DD
= +20 V ± 10%, V
SS
= −20 V ± 10%, GND = 0 V, unless otherwise noted.
Table 2.
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range V
DD
to V
SS
V
On Resistance, R
ON
12.5 Ω typ V
S
= ±15 V, I
S
= −10 mA; see Figure 27
14 18 22 Ω max V
DD
= +18 V, V
SS
= −18 V
On-Resistance Match Between Channels,
∆R
ON
0.1 Ω typ V
S
= ±15 V, I
S
= −10 mA
0.8 1.3 1.4 Ω max
On-Resistance Flatness, R
FLAT (ON)
2.3 Ω typ V
S
= ±15 V, I
S
= −10 mA
2.7 3.3 3.7 Ω max
LEAKAGE CURRENTS V
DD
= +22 V, V
SS
= −22 V
Source Off Leakage, I
S
(Off) ±0.1 nA typ V
S
= ±15 V, V
D
=
15 V; see Figure 24 and
Figure 25
±0.25 ±1 ±10 nA max
Drain Off Leakage, I
D
(Off) ±0.1 nA typ V
S
= ±15 V, V
D
=
15 V; see Figure 25
±0.4 ±4 ±10 nA max
Channel On Leakage, I
D
(On), I
S
(On) ±0.1 nA typ V
S
= V
D
= ±15 V; see Figure 24 and
Figure 26
±0.4 ±4 ±10 nA max
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.8 V max
Input Current, I
INL
or I
INH
0.002 μA typ V
IN
= V
GND
or V
DD
±0.1 μA max
Digital Input Capacitance, C
IN
6 pF typ
DYNAMIC CHARACTERISTICS
1
Transition Time, t
TRANSITION
200 ns typ R
L
= 300 Ω, C
L
= 35 pF
235 279 294 ns max V
S
= 10 V; see Figure 32
t
ON
(EN) 199 ns typ R
L
= 300 Ω, C
L
= 35 pF
239 300 344 ns max V
S
= 10 V; see Figure 33
t
OFF
(EN) 157 ns typ R
L
= 300 Ω, C
L
= 35 pF
185 208 227 ns max V
S
= 10 V; see Figure 33
Break-Before-Make Time Delay, t
D
77 ns typ R
L
= 300 Ω, C
L
= 35 pF
46 ns min V
S
= 10 V; see Figure 34
Charge Injection, Q
INJ
160 pC typ V
S
= 0 V, R
S
= 0 Ω, C
L
= 1 nF; see Figure 35
Off Isolation −60 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 29
Channel-to-Channel Crosstalk −80 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 28
Total Harmonic Distortion + Noise 0.01 % typ R
L
= 1 kΩ, 20 V p-p, f = 20 Hz to 20 kHz; see
Figure 30
−3 dB Bandwidth 190 MHz typ R
L
= 50 Ω, C
L
= 5 pF; see Figure 31
Insertion Loss −0.7 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 31
C
S
(Off) 11 pF typ V
S
= 0 V, f = 1 MHz
C
D
(Off) 22 pF typ V
S
= 0 V, f = 1 MHz
C
D
(On), C
S
(On) 55 pF typ V
S
= 0 V, f = 1 MHz
POWER REQUIREMENTS V
DD
= +22 V, V
SS
= −22 V
I
DD
50 μA typ Digital inputs = 0 V or V
DD
70 110 μA max
I
SS
0.001 μA typ Digital inputs = 0 V or V
DD
1 μA max
V
DD
/V
SS
±922 V min/V max GND = 0 V
1
Guaranteed by design; not subject to production test.
Data Sheet ADG5419
Rev. A | Page 5 of 19
12 V SINGLE SUPPLY
V
DD
= 12 V ± 10%, V
SS
= 0 V, GND = 0 V, unless otherwise noted.
Table 3.
Parameter 2C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
On Resistance, R
ON
26 Ω typ V
S
= 0 V to 10 V, I
S
= −10 mA; see
Figure 27
30 38 44 Ω max V
DD
= 10.8 V, V
SS
= 0 V
On-Resistance Match Between Channels,
∆R
ON
0.1 Ω typ V
S
= 0 V to 10 V, I
S
= −10 mA
1 1.5 1.6 Ω max
On-Resistance Flatness, R
FLAT (ON)
5.5 Ω typ V
S
= 0 V to 10 V, I
S
= −10 mA
6.8 8.3 12.3 Ω max
LEAKAGE CURRENTS V
DD
= +13.2 V, V
SS
= 0 V
Source Off Leakage, I
S
(Off) ±0.1 nA typ V
S
= 1 V to 10 V, V
D
= 10 V to 1 V;
see Figure 24 and Figure 25
±0.25 ±1 ±10 nA max
Drain Off Leakage, I
D
(Off) ±0.1 nA typ VS = 1V to10 V, VD = 10 V to 1V; see Figure 25
±0.4 ±4 ±10 nA max
Channel On Leakage, I
D
(On), I
S
(On) ±0.1 nA typ V
S
= V
D
= 1 V to 10 V; see Figure 24 and
Figure 26
±0.4 ±4 ±10 nA max
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.8 V max
Input Current, I
INL
or I
INH
0.002 μA typ V
IN
= V
GND
or V
DD
±0.1 μA max
Digital Input Capacitance, C
IN
6 pF typ
DYNAMIC CHARACTERISTICS
1
Transition Time, t
TRANSITION
333 ns typ R
L
= 300 Ω, C
L
= 35 pF
414 508 567 ns max V
S
= 8 V; see Figure 32
t
ON
(EN) 327 ns typ R
L
= 300 Ω, C
L
= 35 pF
410 526 612 ns max V
S
= 8 V; see Figure 33
t
OFF
(EN) 166 ns typ R
L
= 300 Ω, C
L
= 35 pF
200 528 611 ns max V
S
= 8 V; see Figure 33
Break-Before-Make Time Delay, t
D
176 ns typ R
L
= 300 Ω, C
L
= 35 pF
97 ns min V
S
= 8 V; see Figure 34
Charge Injection, Q
INJ
55 pC typ V
S
= 6 V, R
S
= 0 Ω, C
L
= 1 nF; see
Figure 35
Off Isolation −60 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see
Figure 29
Channel-to-Channel Crosstalk −80 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see
Figure 28
Total Harmonic Distortion + Noise 0.03 % typ R
L
= 1 kΩ, 6 V p-p, f = 20 Hz to 20 kHz; see
Figure 30
−3 dB Bandwidth 170 MHz typ R
L
= 50 Ω, C
L
= 5 pF; see Figure 31
Insertion Loss −1.7 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see
Figure 31
C
S
(Off) 15 pF typ V
S
= 6 V, f = 1 MHz
C
D
(Off) 29 pF typ V
S
= 0 V, f = 1 MHz
C
D
(On), C
S
(On) 50 pF typ V
S
= 6 V, f = 1 MHz
POWER REQUIREMENTS V
DD
= 13.2 V
I
DD
40 μA typ Digital inputs = 0 V or V
DD
50 65 μA max
V
DD
9/40 V min/V max GND = 0 V, V
SS
= 0 V
1
Guaranteed by design; not subject to production test.

ADG5419BRMZ-RL7

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Analog Switch ICs Latchup Proof, 20V, 15V,+12V,+36V 1xSPDT
Lifecycle:
New from this manufacturer.
Delivery:
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