PBSS4021SN,115 Datasheet PBSS4021SN,115 | P1-P3

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On 7 February 2017 the former NXP Standard Product business became a new company with the

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1. Product profile

1.1 General description

NPN/NPN low V

CEsat

Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8)

medium power Surface-Mounted Device (SMD) plastic package.

1.2 Features and benefits

 Very low collector-emitter saturation voltage V

CEsat

 High collector current capability I

and I

 High collector current gain (h

) at high I

 High efficiency due to less heat generation

 Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

 Loadswitch

 Battery-driven devices

 Power management

 Charging circuits

 Power switches (e.g. motors, fans)

1.4 Quick reference data

[1] Pulse test: t

≤ 300 μs; δ≤0.02.

PBSS4021SN

20 V, 7.5 A NPN/NPN low V

CEsat

(BISS) transistor

Rev. 2 — 11 October 2010 Product data sheet

Table 1. Product overview

Type number Package PNP/PNP

complement

NPN/PNP

complement

NXP Name

PBSS4021SN SOT96-1 SO8 PBSS4021SP PBSS4021SPN

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter voltage open base - - 20 V

collector current - - 7.5 A

peak collector current single pulse;

≤ 1ms

--15A

CEsat

collector-emitter

saturation resistance

=5A; I

=0.5A

[1]

-2535mΩ

Product data sheet Rev. 2 — 11 October 2010 2 of 15

NXP Semiconductors

PBSS4021SN

20 V, 7.5 A NPN/NPN low V

CEsat

(BISS) transistor

2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

Table 3. Pinning

Pin Description Simplified outline Graphic symbol

1emitter TR1

2 base TR1

3emitter TR2

4 base TR2

5 collector TR2

6 collector TR2

7 collector TR1

8 collector TR1

006aaa96

8765

1234

TR1 TR2

Table 4. Ordering information

Type number Package

Name Description Version

PBSS4021SN SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1

Table 5. Marking codes

Type number Marking code

PBSS4021SN 4021SN

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per transistor

CBO

collector-base voltage open emitter - 20 V

CEO

collector-emitter voltage open base - 20 V

EBO

emitter-base voltage open collector - 5 V

collector current - 7.5 A

peak collector current single pulse; t

≤ 1ms - 15 A

base current - 1 A

tot

total power dissipation T

amb

≤ 25 °C

[1]

-0.73W

[2]

-1W

[3]

-1.7W

P1-P3 P4-P6 P7-P9 P10-P12 P13-P15 P16-P16

PBSS4021SN,115

Mfr. #:

Buy PBSS4021SN,115

Manufacturer:

Nexperia

Description:

Bipolar Transistors - BJT Dual NPN 20V 7.5A 0.73W 115MHz

Lifecycle:

New from this manufacturer.

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PBSS4021SN,115