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PBSS4021SN,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
PBSS4021SN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 11 October 2010 3 of 15
NXP Semiconductors
PBSS4021SN
20 V, 7.5 A NPN/NPN low V
CEsat
(BISS) transistor
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[3] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Per device
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
-0.86W
[2]
-1.4W
[3]
-2.3W
T
j
junction temperature - 150 °C
T
amb
ambient temperature −55 +150 °C
T
stg
storage temperature −65 +150 °C
(1) Ceramic PCB, Al
2
O
3
, standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm
2
(3) FR4 PCB, standard footprint
Fig 1. Per device: Power derating curves
Table 6. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
T
amb
(°C)
−75 17512525 75−25
006aac234
1.0
2.0
3.0
P
tot
(W)
0.0
(1)
(3)
(2)
PBSS4021SN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 11 October 2010 4 of 15
NXP Semiconductors
PBSS4021SN
20 V, 7.5 A NPN/NPN low V
CEsat
(BISS) transistor
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[3] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
--170K/W
[2]
--125K/W
[3]
--75K/W
R
th(j-sp)
thermal resistance from
junction to solder point
--40K/W
Per device
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
--145K/W
[2]
--90K/W
[3]
--55K/W
FR4 PCB, standard footprint
Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aac235
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
PBSS4021SN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 11 October 2010 5 of 15
NXP Semiconductors
PBSS4021SN
20 V, 7.5 A NPN/NPN low V
CEsat
(BISS) transistor
FR4 PCB, mounting pad for collector 1 cm
2
Fig 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
Ceramic PCB, Al
2
O
3
, standard footprint
Fig 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aac236
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aac237
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
10
1
10
2
Z
th(j-a)
(K/W)
10
−1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

PBSS4021SN,115

Mfr. #:
Buy PBSS4021SN,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT Dual NPN 20V 7.5A 0.73W 115MHz
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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