CAT93C66, CAT93W66
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4
Table 8. A.C. TEST CONDITIONS
Input Rise and Fall Times 50 ns
Input Pulse Voltages 0.4 V to 2.4 V 4.5 V V
CC
5.5 V
Timing Reference Voltages 0.8 V, 2.0 V 4.5 V V
CC
5.5 V
Input Pulse Voltages 0.2 V
CC
to 0.7 V
CC
1.8 V V
CC
4.5 V
Timing Reference Voltages 0.5 V
CC
1.8 V V
CC
4.5 V
Output Load Current Source I
OLmax
/I
OHmax
; CL = 100 pF
Device Operation
The CAT93C66 is a 4096−bit nonvolatile memory
intended for use with industry standard microprocessors.
The CAT93C66 can be organized as either registers of 16
bits or 8 bits. When organized as X16, seven 11−bit
instructions control the reading, writing and erase
operations of the device. When organized as X8, seven
12−bit instructions control the reading, writing and erase
operations of the device. The CAT93W66 works in x16
mode only. The device operates on a single power supply
and will generate on chip, the high voltage required during
any write operation.
Instructions, addresses, and write data are clocked into the
DI pin on the rising edge of the clock (SK). The DO pin is
normally in a high impedance state except when reading data
from the device, or when checking the ready/busy status
after a write operation. The serial communication protocol
follows the timing shown in Figure 2.
The ready/busy status can be determined after the start of
internal write cycle by selecting the device (CS high) and
polling the DO pin; DO low indicates that the write
operation is not completed, while DO high indicates that the
device is ready for the next instruction. If necessary, the DO
pin may be placed back into a high impedance state during
chip select by shifting a dummy “1” into the DI pin. The DO
pin will enter the high impedance state on the rising edge of
the clock (SK). Placing the DO pin into the high impedance
state is recommended in applications where the DI pin and
the DO pin are to be tied together to form a common DI/O
pin.
The format for all instructions sent to the device is a
logical “1” start bit, a 2−bit (or 4−bit) opcode, 8−bit address
(an additional bit when organized X8) and for write
operations a 16−bit data field (8−bit for X8 organizations).
The instruction format is shown in Instruction Set table.
Table 9. INSTRUCTION SET
Instruction Start Bit Opcode
Address Data
Comments
x8 (Note 10) x16 x8 (Note 10) x16
READ 1 10 A8−A0 A7−A0 Read Address AN – A0
ERASE 1 11 A8−A0 A7−A0 Clear Address AN – A0
WRITE 1 01 A8−A0 A7−A0 D7−D0 D15−D0 Write Address AN – A0
EWEN 1 00 11XXXXXXX 11XXXXXX Write Enable
EWDS 1 00 00XXXXXXX 00XXXXXX Write Disable
ERAL 1 00 10XXXXXXX 10XXXXXX Clear All Addresses
WRAL 1 00 01XXXXXXX 01XXXXXX D7−D0 D15−D0 Write All Addresses
10.The x8 memory organization is available for the CAT93C66 only.
CAT93C66, CAT93W66
www.onsemi.com
5
Read
Upon receiving a READ command and an address
(clocked into the DI pin), the DO pin of the CAT93C66,
CAT93W66 will come out of the high impedance state and,
after sending an initial dummy zero bit, will begin shifting
out the data addressed (MSB first). The output data bits will
toggle on the rising edge of the SK clock and are stable after
the specified time delay (t
PD0
or t
PD1
).
For the CAT93C66, CAT93W66 after the initial data word
has been shifted out and CS remains asserted with the SK
clock continuing to toggle, the device will automatically
increment to the next address and shift out the next data word
in a sequential READ mode. As long as CS is continuously
asserted and SK continues to toggle, the device will keep
incrementing to the next address automatically until it
reaches to the end of the address space, then loops back to
address 0. In the sequential READ mode, only the initial data
word is preceeded by a dummy zero bit. All subsequent data
words will follow without a dummy zero bit. The READ
instruction timing is illustrated in Figure 3.
Erase/Write Enable and Disable
The device powers up in the write disable state. Any
writing after power−up or after an EWDS (erase/write
disable) instruction must first be preceded by the EWEN
(erase/write enable) instruction. Once the write instruction
is enabled, it will remain enabled until power to the device
is removed, or the EWDS instruction is sent. The EWDS
instruction can be used to disable all CAT93C66,
CAT93W66 write and erase instructions, and will prevent
any accidental writing or clearing of the device. Data can be
read normally from the device regardless of the write
enable/disable status. The EWEN and EWDS instructions
timing is shown in Figure 4.
Figure 2. Synchronous Data Timing
SK
DI
CS
DO
VALID VALID
DATA VALID
t
CSS
t
DIS
t
SKHI
t
SKLOW
t
DIS
t
DIH
t
CSH
t
CSMIN
t
PD0
, t
PD1
Figure 3. READ Instruction Timing
SK
CS
DI
DO
HIGH−Z
11 0
Dummy 0
Don’t Care
A
N
A
N−1
t
PD0
A
0
Address + n
D
15
.
.
.
or
D
7
.
.
.
Address + 2
D
15
.
.
.
D
0
or
D
7
.
.
.
D
0
Address + 1
D
15
.
.
.
D
0
or
D
7
.
.
.
D
0
D
15
.
.
.
D
0
or
D
7
.
.
.
D
0
CAT93C66, CAT93W66
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6
Write
After receiving a WRITE command (Figure 5), address
and the data, the CS (Chip Select) pin must be deselected for
a minimum of t
CSMIN
. The falling edge of CS will start the
self clocking clear and data store cycle of the memory
location specified in the instruction. The clocking of the SK
pin is not necessary after the device has entered the self
clocking mode. The ready/busy status of the CAT93C66,
CAT93W66 can be determined by selecting the device and
polling the DO pin. Since this device features Auto−Clear
before write, it is NOT necessary to erase a memory location
before it is written into.
Erase
Upon receiving an ERASE command and address, the CS
(Chip Select) pin must be deasserted for a minimum of
t
CSMIN
(Figure 6). The falling edge of CS will start the self
clocking clear cycle of the selected memory location. The
clocking of the SK pin is not necessary after the device has
entered the self clocking mode. The ready/busy status of the
CAT93C66, CAT93W66 can be determined by selecting the
device and polling the DO pin. Once cleared, the content of
a cleared location returns to a logical “1” state.
Figure 4. EWEN/EWDS Instruction Timing
CS
DI
STANDBY
10
0
*
SK
* ENABLE = 11
DISABLE = 00
Figure 5. Write Instruction Timing
SK
CS
DI
DO
STANDBY
HIGH−Z
HIGH−Z
101
BUSY
READY
STATUS
t
HZ
t
EW
t
SV
VERIFY
A
N−1
A
N
A
0
D
0
D
N
t
CSMIN
Figure 6. Erase Instruction Timing
SK
CS
DI
DO
STANDBY
HIGH−Z
HIGH−Z
1
BUSY
READY
STATUS
11
VERIFY
t
HZ
A
N
A
N−1
A
0
t
CS
t
SV
t
EW

CAT93C66LI-G

Mfr. #:
Manufacturer:
ON Semiconductor
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New from this manufacturer.
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