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IXTH16P60P

P1-P3P4-P5
© 2008 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C - 600 V
V
DGR
T
J
= 25°C to 150°C, R
GS
= 1MΩ - 600 V
V
GSS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
C
= 25°C - 16 A
I
DM
T
C
= 25°C, pulse width limited by T
JM
- 48 A
I
AR
T
C
= 25°C - 16 A
E
AS
T
C
= 25°C 2.5 J
dV/dt I
S
≤ I
DM
, V
DD
≤ V
DSS
, T
J
≤ 150°C 10 V/ns
P
D
T
C
= 25°C 460 W
T
J
- 55 ... +150 °C
T
JM
150 °C
T
stg
- 55 ... +150 °C
T
L
1.6mm (0.062 in.) from case for 10s 300 °C
T
SOLD
Plastic body for 10s 260 °C
M
d
Mounting torque (TO-247) 1.13 / 10 Nm/lb.in.
Weight TO-268 5 g
TO-247 6 g
DS99988(5/08)
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= - 250μA - 600 V
V
GS(th)
V
DS
= V
GS
, I
D
= - 250μA - 2.5 - 4.5 V
I
GSS
V
GS
= ±20V, V
DS
= 0V ±100 nA
I
DSS
V
DS
= V
DSS
- 25 μA
V
GS
= 0V T
J
= 125°C - 200 μA
R
DS(on)
V
GS
= -10V, I
D
= 0.5 • I
D25
, Note 1 720 mΩ
PolarP
TM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTH16P60P
IXTT16P60P
V
DSS
= - 600V
I
D25
= - 16A
R
DS(on)
≤≤
≤≤
≤ 720m
ΩΩ
ΩΩ
Ω
Preliminary Technical Information
Features:
z
International standard packages
z
Avalanche Rated
z
Rugged PolarP
TM
process
z
Low package inductance
- easy to drive and to protect
Applications:
z
High side switching
z
Push-pull amplifiers
z
DC Choppers
z
Current regulators
z
Automatic test equipment
Advantages:
z
Low gate charge results in simple
drive requirement
z
High power density
z
Fast switching
z
Easy to parallel
G = Gate D = Drain
S = Source TAB = Drain
TO-247 (IXTH)
G
D
S
D (TAB)
TO-268 (IXTT)
G
S
D (TAB)
IXTH16P60P
IXTT16P60P
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
g
fs
V
DS
= -10V, I
D
= 0.5 • I
D25
, Note 1 11 18 S
C
iss
5120 pF
C
oss
V
GS
= 0V, V
DS
= - 25V, f = 1MHz 445 pF
C
rss
60 pF
t
d(on)
29 ns
t
r
25 ns
t
d(off)
60 ns
t
f
38 ns
Q
g(on)
92 nC
Q
gs
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
27 nC
Q
gd
23 nC
R
thJC
0.27 °C/W
R
thCS
0.21 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
I
S
V
GS
= 0V - 16 A
I
SM
Repetitive, pulse width limited by T
JM
- 64 A
V
SD
I
F
= - 8A, V
GS
= 0V, Note 1 - 2.8 V
t
rr
440 ns
Q
RM
7.4 μC
I
RM
- 33.6
A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Resistive Switching Times
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 3Ω (External)
I
F
= - 8A, -di/dt = -150A/μs
V
R
= - 100V, V
GS
= 0V
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
e
∅ P
TO-247 (IXTH) Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
TO-268 (IXTT) Outline
© 2008 IXYS CORPORATION, All rights reserved
IXTH16P60P
IXTT16P60P
Fig. 1. Output Characteristics
@ 25ºC
-16
-14
-12
-10
-8
-6
-4
-2
0
-11-10-9-8-7-6-5-4-3-2-10
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 7V
- 5
V
- 6
V
Fig. 2. Extended Output Characteristics
@ 25ºC
-38
-34
-30
-26
-22
-18
-14
-10
-6
-2
-30-27-24-21-18-15-12-9-6-30
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 7V
- 6
V
- 5
V
Fig. 3. Output Characteristics
@ 125ºC
-16
-14
-12
-10
-8
-6
-4
-2
0
-20-18-16-14-12-10-8-6-4-20
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 7V
- 6
V
- 5
V
Fig. 4. R
DS(on)
Normalized to I
D
= - 8A vs.
Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= -10V
I
D
= -16
A
I
D
= - 8
A
Fig. 5. R
DS(on)
Normalized to I
D
= - 8A vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-35-30-25-20-15-10-50
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= -10V
T
J
= 25ºC
T
J
= 125ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
I
D
- Amperes
P1-P3P4-P5

IXTH16P60P

Mfr. #:
Buy IXTH16P60P
Manufacturer:
Littelfuse
Description:
MOSFET -16.0 Amps -600V 0.720 Rds
Lifecycle:
New from this manufacturer.
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