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IXTH16P60P

P1-P3P4-P5
IXTH16P60P
IXTT16P60P
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 7. Input Admittance
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
-6.0-5.5-5.0-4.5-4.0-3.5
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
4
8
12
16
20
24
28
32
-20-18-16-14-12-10-8-6-4-20
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
-3.5-3.0-2.5-2.0-1.5-1.0-0.5
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0 102030405060708090100
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= - 300V
I
D
= - 8A
I
G
= -1mA
Fig. 11. Capacitance
10
100
1,000
10,000
-40-35-30-25-20-15-10-50
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1.0
10.0
100.0
10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
100µs
R
DS(on)
Limit
-
-
--
-
-
1ms
-
100ms
10ms
DC
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: T_16P60P (B7) 6-03-08
IXTH16P60P
IXTT16P60P
Fig. 13. Maximum Transient Thermal Impedance
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
P1-P3P4-P5

IXTH16P60P

Mfr. #:
Buy IXTH16P60P
Manufacturer:
Littelfuse
Description:
MOSFET -16.0 Amps -600V 0.720 Rds
Lifecycle:
New from this manufacturer.
Delivery:
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