HMC-AUH312 Datasheet HMC-AUH312-SX, HMC-AUH312 | P1-P3

0.5 GHz to 80 GHz, GaAs, HEMT, MMIC,

Low Noise Wideband Amplifier

Data Sheet

HMC-AUH312

Rev. E Document Feedback

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by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rights of third parties that may result from its use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

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One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Technical Support www.analog.com

FEATURES

Small signal gain: >8 dB

80 GHz distributed amplifier

Configurable with or without bias tees for V

and V

1 bias

Low power dissipation

300 mW with bias tee at V

= 5 V

360 mW without bias tee at V

= 6 V

480 mW without bias tee at V

= 8 V

Die size: 1.2 mm × 1.0 mm × 0.1 mm

APPLICATIONS

Fiber optic modulator drivers

Fiber optic photoreceiver postamplifiers

Low noise amplifier for test and measurement equipment

Point to point and point to multipoint radios

Wideband communication and surveillance systems

Radar warning receivers

FUNCTIONAL BLOCK DIAGRAM

igure 1.

GENERAL DESCRIPTION

The HMC-AUH312 is a gallium arsenide (GaAs), monolithic

microwave integrated circuit (MMIC), HEMT, low noise,

wideband amplifier die that operates between 500 MHz and

80 GHz, providing a typical 3 dB bandwidth of 80 GHz. The

amplifier provides 10 dB of small signal gain and a maximum

output amplitude of 2.5 V p-p, which makes it ideal for use in

broadband wireless, fiber optic communications, and test

equipment applications.

The amplifier die occupies 1.2 mm × 1.0 mm, facilitating easy

integration into a multichip module (MCM). The HMC-AUH312

can be used with or without a bias tee, and requires off-chip

blocking components and bypass capacitors for the dc supply

lines. Adjustable gate voltages allow for gain adjustment.

HMC-AUH312

RFIN/V

RFOUT/

13476-001

HMC-AUH312 Data Sheet

Rev. E | Page 2 of 17

TABLE OF CONTENTS

Features .............................................................................................. 1

Applications ....................................................................................... 1

Functional Block Diagram .............................................................. 1

General Description ......................................................................... 1

Revision History ............................................................................... 2

Specifications ..................................................................................... 3

0.5 GHz to 60 GHz Frequency Range ........................................ 3

60 GHz to 80 GHz Frequency Range ......................................... 3

Recommended Operating Conditions ...................................... 3

Absolute Maximum Ratings ............................................................ 5

ESD Caution .................................................................................. 5

Pin Configuration and Function Descriptions ............................. 6

Interface Schematics..................................................................... 7

Typical Performance Characteristics ............................................. 8

Theory of Operation ...................................................................... 11

Applications Information .............................................................. 12

Applications Overview .............................................................. 12

Device Mounting ........................................................................ 14

Device Operation ....................................................................... 14

Mounting and Bonding Techniques for Millimeterwave GaAs

MMICs ............................................................................................. 15

Handling Guidelines for ESD Protection of GaAs MMICs .. 15

Handling Precautions ................................................................ 15

Mounting Techniques ................................................................ 16

Wire Bonding .............................................................................. 16

Outline Dimensions ....................................................................... 17

Ordering Guide .......................................................................... 17

REVISION HISTORY

11/15—v04.0615 to Rev. E

This Hittite Microwave Products data sheet has been reformatted

to meet the styles and standards of Analog Devices, Inc.

Updated Format .................................................................. Universal

Changes to Title of Data Sheet ............................................... Page 1

Change Vg1 to V

1, Vg2 to V

2, Vd to V

, RFIN to

RFIN/V

1, and RFOUT to RFOUT/V

.................. Throughout

Changes to General Description Section ...................................... 1

Changes to Gain Parameter, Table 2 .............................................. 3

Changes to Power Dissipation Parameter and Operating

Temperature Parameter, Table 3 ..................................................... 3

Changes to Power Dissipation Parameter and Operating

Temperature Parameter, Table 4 ..................................................... 4

Changes to Table 5 ............................................................................ 5

Added Figure 2, Renumbered Sequentially .................................. 6

Changes to Table 6 ............................................................................ 6

Added Interface Schematics Section ............................................... 7

Changes to Figure 3 ........................................................................... 7

Changes to Figure 14, Figure 16, and Figure 19 ............................ 9

Changes to Figure 20...................................................................... 10

Added Theory of Operation Section and Figure 21 .................. 11

Added Applications Information Section and Applications

Overview Section............................................................................ 12

Changes to Figure 24 and Figure 25 ............................................ 13

Changes to Device Power-Up Instructions Section and Device

Power-Down Instructions Section ............................................... 14

Added Handling Guidelines for ESD Protection of GaAs MMICs

Section and Opening the Protective Packaging Section ................ 15

Changes to Handling Precautions Section .................................. 15

Changes to Mounting Techniques Section ................................. 16

Updated Outline Dimensions ....................................................... 17

Changes to Ordering Guide .......................................................... 17

Data Sheet HMC-AUH312

Rev. E | Page 3 of 17

SPECIFICATIONS

= 25°C, V

= 8 V, V

2 = 1.8 V, I

= 60 mA, unless otherwise noted.

0.5 GHz to 60 GHz FREQUENCY RANGE

Table 1.

Parameter

Symbol

Min

Typ

Max

Unit

Test Conditions/Comments

FREQUENCY RANGE 0.5 60 GHz

GAIN 8 10 dB

RETURN LOSS

Input

Output 17 dB

OUTPUT

Output Power for 1 dB

Compression

P1dB 13.5 dBm

Saturated Output Power P

SAT

16 dBm

Output Third-Order Intercept IP3 23 dBm

NOISE FIGURE 5 dB

SUPPLY CURRENT I

60 mA V

= 8 V, adjust V

1 between −2 V and 0 V to achieve I

60 mA typical

60 GHz to 80 GHz FREQUENCY RANGE

Table 2.

Parameter Symbol Min Typ Max Unit Test Conditions/Comments

FREQUENCY RANGE 60 80 GHz

GAIN 9 dB

RETURN LOSS

Input 10 dB

Output 15 dB

OUTPUT

Output Power for 1 dB

Compression

P1dB 13 dBm

Saturated Output Power P

SAT

15 dBm

Output Third-Order Intercept IP3 22 dBm

NOISE FIGURE dB

SUPPLY CURRENT I

60 mA V

= 8 V, adjust V

1 between −2 V and 0 V to achieve I

60 mA typical

RECOMMENDED OPERATING CONDITIONS

Table 3. Recommended Operating Conditions with Bias Tee

Parameter Symbol Min Typ Max Unit

POSITIVE SUPPLY

Voltage 3 5 6 V

Current 60 80 mA

GATE VOLTAGE

Gate Voltage 1 V

1 −1 +0.3 V

Gate Voltage 2

1.8

POWER DISSIPATION 300 mW

RF INPUT POWER 4 dBm

OPERATING TEMPERATURE −55 +25 +85 °C

P1-P3 P4-P6 P7-P9 P10-P12 P13-P15 P16-P17

HMC-AUH312

Mfr. #:

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Description:

RF Amplifier GaAs HEMT WBand Driver amp, DC - 65 GHz

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HMC-AUH312

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