HMC-AUH312 Data Sheet
Rev. E | Page 10 of 17
Figure 20. Second-Order Harmonic vs. Frequency at Various P
OUT
Levels
50
40
20
30
10
0
0 4 8 12 16 20 24
SECOND-ORDER HARMONIC (dBc)
FREQUENCY (GHz)
0dBm
1dBm
2dBm
3dBm
4dBm
5dBm
13476-020
Data Sheet HMC-AUH312
Rev. E | Page 11 of 17
THEORY OF OPERATION
HMC-AUH312 is a GaAs MMIC HEMT cascode distributed,
low noise, wideband amplifier. The cascode distributed
amplifier uses a fundamental cell of two field effect transistors
(FETs) in series, source to drain. This fundamental cell then
duplicates a number of times.
The major benefit of this architecture is an increase in the
operation bandwidth. The basic schematic for a fundamental
cell is shown in Figure 21, which shows the RFIN and RFOUT
functions of the RFIN/V
GG
1 and RFOUT/V
DD
pins.
Figure 21. Fundamental Cell Schematic
To obtain the best performance from the HMC-AUH312 and
not damage the device, follow the recommended biasing
sequence outlined in the Device Operation section.
13476-027
RFOUT
V
GG
2
V
GG
1
RFIN
V
DD
HMC-AUH312 Data Sheet
Rev. E | Page 12 of 17
APPLICATIONS INFORMATION
APPLICATIONS OVERVIEW
The HMC-AUH312 has single-ended input and output ports
whose impedances are nominally equal to 50 Ω over the
frequency range 0.5 GHz to 80 GHz. Consequently, it can be
directly inserted into a 50 Ω system with no impedance
matching circuitry required. This means that multiple numbers
of HMC-AUH312 amplifiers can be cascaded back to back
without the need for external matching circuitry.
Because the input and output impedances are sufficiently stable
vs. variations in temperature and supply voltage, no impedance
matching compensation is required.
It is critical to supply very low inductance ground connections
to the ground pins as well as to the die bottom. These connec-
tions ensure stable operation.
The HMC-AUH312 is a wideband amplifier with a positive gain
slope with increasing frequency, which helps users to compensate
for the typical higher frequency loss introduced by several
system components.
There are two methods for biasing the device. The typical
biasing technique is shown by the circuit diagram in Figure 22
and the assembly diagram shown in Figure 24. This technique
uses only the RFIN and RFOUT functions of the RFIN/V
GG
1
and RFOUT/V
DD
pins.
The alternate biasing technique is represented by the circuit
shown in Figure 23 and the assembly shown in Figure 25, which
include the use of the V
GG
1 and V
DD
functions of the RFIN/V
GG
1
and RFOUT/V
DD
pins.
Figure 22. Applications Circuit
Figure 23. Suggested Alternate Applications Circuit
V
GG
1
V
GG
2
RFIN
1
3
4
5
2
RFOUT
0.1µF
200pF
0.1µF
0.1µF200pF
200pF
V
DD
13476-021
1
5
3
4
V
GG
1
V
DD
BIAS
TEE
RFIN
0.1µF
200pF 0.1µF200pF
V
GG
2
RFOUT
BIAS
TEE
13476-022

HMC-AUH312

Mfr. #:
Manufacturer:
Analog Devices / Hittite
Description:
RF Amplifier GaAs HEMT WBand Driver amp, DC - 65 GHz
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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