IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH40N120B3D1
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
e
∅ P
TO-247 (IXYH) Outline
1 2 3
Terminals: 1 - Gate 2 - Collector
3 - Emitter
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fs
I
C
= 40A, V
CE
= 10V, Note 1 13 22 S
C
ie
s
1690 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 157 pF
C
res
47 pF
Q
g(on)
87 nC
Q
ge
I
C
= 40A, V
GE
= 15V, V
CE
= 0.5 • V
CES
12 nC
Q
gc
38 nC
t
d(on)
22 ns
t
ri
50 ns
E
on
2.70 mJ
t
d(off)
177 ns
t
fi
183 ns
E
of
f
1.60 3.00 mJ
t
d(on)
24 ns
t
ri
60 ns
E
on
5.25 mJ
t
d(off)
205 ns
t
fi
206 ns
E
off
2.05 mJ
R
thJC
0.26 °C/W
R
thCS
0.21 °C/W
Inductive load, T
J
= 25°C
I
C
= 40A, V
GE
= 15V
V
CE
= 0.5 • V
CES
, R
G
= 10Ω
Note 2
Inductive load, T
J
= 125°C
I
C
= 40A, V
GE
= 15V
V
CE
= 0.5 • V
CES
, R
G
= 10Ω
Note 2
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
CE
(clamp), T
J
or R
G
.
Reverse Diode (FRED)
(T
J
= 25°C, Unless Otherwise Specified) Characteristic Value
Symbol Test Conditions Min. Typ. Max.
V
F
3.0 V
T
J
= 150°C 1.6 V
I
RM
4 A
t
rr
100 ns
R
thJC
0.9 °C/W
I
F
= 30A,V
GE
= 0V, -di
F
/dt = 100A/μs, T
J
= 100°C
V
R
= 300V T
J
= 100°C
I
F
= 30A,V
GE
= 0V, Note 1
