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IXYH40N120B3D1

P1-P3P4-P6P7-P7
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH40N120B3D1
Fig. 7. Transconductance
0
5
10
15
20
25
30
0 102030405060708090100
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
150ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
10
20
30
40
50
60
70
80
90
200 300 400 500 600 700 800 900 1000 1100 1200 1300
V
CE
- Volts
I
C
- Amperes
T
J
= 150ºC
R
G
= 10
Ω
dv / dt < 10V / ns
Fig. 11. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- ºC / W
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 102030405060708090
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 600V
I
C
= 80A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
ies
C
oes
C
res
© 2013 IXYS CORPORATION, All Rights Reserved
IXYH40N120B3D1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
1
2
3
4
5
6
10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
E
off
- MilliJoules
0
4
8
12
16
20
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 600V
I
C
= 40A
I
C
= 80A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
40
80
120
160
200
240
280
10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
t
f i
- Nanoseconds
100
200
300
400
500
600
700
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 80A
I
C
= 40A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
20 30 40 50 60 70 80
I
C
- Amperes
E
off
- MilliJoules
0
2
4
6
8
10
12
14
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 10
Ω
,
V
GE
= 15V
V
CE
= 600V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
25 50 75 100 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
2
4
6
8
10
12
14
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 10
Ω
,
V
GE
= 15V
V
CE
= 600V
I
C
= 40A
I
C
= 80A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
0
50
100
150
200
250
300
350
400
20 30 40 50 60 70 80
I
C
- Amperes
t
f i
- Nanoseconds
120
140
160
180
200
220
240
260
280
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 600V
T
J
= 125ºC
T
J
= 25ºC
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
0
50
100
150
200
250
300
350
25 50 75 100 125
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
150
160
170
180
190
200
210
220
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 600V
I
C
= 40A
I
C
= 80A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH40N120B3D1
IXYS REF: IXY_40N120B3(4A-C91) 11-10-11
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
0
20
40
60
80
100
120
140
160
20 30 40 50 60 70 80
I
C
- Amperes
t
r i
- Nanoseconds
10
14
18
22
26
30
34
38
42
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 600V
T
J
= 25ºC
T
J
= 125ºC
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
20
40
60
80
100
120
140
160
25 50 75 100 125
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
10
15
20
25
30
35
40
45
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 600V
I
C
= 80A
I
C
= 40A
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
0
50
100
150
200
250
10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
t
r i
- Nanoseconds
0
20
40
60
80
100
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 40A
I
C
= 80A
P1-P3P4-P6P7-P7

IXYH40N120B3D1

Mfr. #:
Buy IXYH40N120B3D1
Manufacturer:
Littelfuse
Description:
IGBT Transistors DISC IGBT XPT-GENX3
Lifecycle:
New from this manufacturer.
Delivery:
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