PBSS8110X_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 December 2009 3 of 15
NXP Semiconductors
PBSS8110X
100 V, 1 A NPN low V
CEsat
(BISS) transistor
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6cm
2
.
[3] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 120 V
V
CEO
collector-emitter voltage open base - 100 V
V
EBO
emitter-base voltage open collector - 5 V
I
C
collector current (DC) - 1 A
I
CM
peak collector current single pulse;
t
p
≤ 1ms
-3A
I
B
base current (DC) - 300 mA
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
-0.55W
[2]
-1.4W
[3]
-2.0W
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
(1) Ceramic PCB, Al
2
O
3
, standard footprint
(2) FR4 PCB; mounting pad for collector 6cm
2
(3) FR4 PCB; standard footprint
Fig 1. Power derating curves
T
amb
(°C)
0 16012040 80
0.8
1.2
0.4
1.6
2.0
P
tot
(W)
0
(1)
(2)
(3)
