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PBSS8110X,135

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
PBSS8110X_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 December 2009 6 of 15
NXP Semiconductors
PBSS8110X
100 V, 1 A NPN low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
Table 7. Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
=80V; I
E
= 0 A - - 100 nA
V
CB
=80V; I
E
=0A;
T
j
= 150 °C
--50μA
I
CES
collector-emitter
cut-off current
V
CE
=80V; V
BE
= 0 V - - 100 nA
I
EBO
emitter-base cut-off
current
V
EB
=4V; I
C
= 0 A - - 100 nA
h
FE
DC current gain V
CE
=10V; I
C
=1mA 150 - -
V
CE
=10V; I
C
= 250 mA 150 - 500
V
CE
=10V; I
C
= 500 mA
[1]
100 - -
V
CE
=10V; I
C
=1A
[1]
80 - -
V
CEsat
collector-emitter
saturation voltage
I
C
=100mA; I
B
=10mA --40mV
I
C
=500mA; I
B
=50mA --120mV
I
C
=1A; I
B
= 100 mA
[1]
--200mV
R
CEsat
collector-emitter
saturation resistance
I
C
=1A; I
B
= 100 mA
[1]
- 165 200 mΩ
V
BEsat
base-emitter
saturation voltage
I
C
=1A; I
B
= 100 mA - - 1.05 V
V
BEon
base-emitter turn-on
voltage
V
CE
=10V; I
C
=1A --0.9V
t
d
delay time V
CC
=10V; I
C
=0.5A;
I
Bon
= 0.025 A; I
Boff
= −0.025 A
-25-ns
t
r
rise time - 220 - ns
t
on
turn-on time - 245 - ns
t
s
storage time - 365 - ns
t
f
fall time - 185 - ns
t
off
turn-off time - 550 - ns
f
T
transition frequency V
CE
=10V; I
C
=50mA;
f=100MHz
100 - - MHz
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f=1MHz
--7.5pF
PBSS8110X_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 December 2009 7 of 15
NXP Semiconductors
PBSS8110X
100 V, 1 A NPN low V
CEsat
(BISS) transistor
V
CE
=10V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
V
CE
=10V
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig 5. DC current gain as a function of collector
current; typical values
Fig 6. Base-emitter voltage as a function of collector
current; typical values
I
C
/I
B
=10
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
I
C
/I
B
= 20; T
amb
= 25 °C
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
001aaa497
200
400
600
h
FE
0
I
C
(mA)
10
−1
10
4
10
3
110
2
10
(1)
(2)
(3)
001aaa495
V
BE
(mV)
I
C
(mA)
10
−1
10
4
10
3
110
2
10
(1)
(2)
(3)
600
400
800
1000
200
(1)
(2)
(3)
001aaa504
I
C
(mA)
10
−1
10
4
10
3
110
2
10
10
−1
1
V
CEsat
(V)
10
−2
001aaa505
I
C
(mA)
10
−1
10
4
10
3
110
2
10
10
2
10
3
V
CEsat
(mV)
10
PBSS8110X_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 December 2009 8 of 15
NXP Semiconductors
PBSS8110X
100 V, 1 A NPN low V
CEsat
(BISS) transistor
I
C
/I
B
= 50; T
amb
= 25 °CI
C
/I
B
=10
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 10. Base-emitter saturation voltage as a function
of collector current; typical values
I
C
/I
B
= 20; T
amb
= 25 °CI
C
/I
B
=10
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig 11. Base-emitter saturation voltage as a function
of collector current; typical values
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
001aaa506
10
3
10
2
10
4
V
CEsat
(mV)
10
I
C
(mA)
10
−1
10
4
10
3
110
2
10
001aaa498
1200
800
1000
400
600
V
BEsat
(mV)
200
I
C
(mA)
10
−1
10
4
10
3
110
2
10
(1)
(2)
(3)
001aaa499
1200
1000
800
600
V
BEsat
(mV)
400
I
C
(mA)
10
−1
10
4
10
3
110
2
10
001aaa501
I
C
(mA)
10
−1
10
4
10
3
110
2
10
1
10
10
2
10
3
R
CEsat
(Ω)
10
−1
(1)
(2)
(3)
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

PBSS8110X,135

Mfr. #:
Buy PBSS8110X,135
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT LO VCESAT(BISS)TRANS
Lifecycle:
New from this manufacturer.
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