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MPS5172G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 2
1 Publication Order Number:
MPS5172/D
MPS5172
General Purpose Transistor
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
25 Vdc
Collector−Base Voltage V
CBO
25 Vdc
Emitter−Base Voltage V
EBO
5.0 Vdc
Collector Current − Continuous I
C
100 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Power Dissipation @ T
A
= 60°C P
D
450 mW
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient R
q
JA
200 °C/W
Thermal Resistance, Junction−to−Case R
q
JC
83.3 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may
be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
http://onsemi.com
TO−92 (TO−226)
CASE 29
STYLE 1
MARKING DIAGRAM
MPS5172 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MPS
5172
AYWW G
G
(Note: Microdot may be in either location)
COLLECTOR
3
2
BASE
1
EMITTER
3
1
2
Device Package Shipping
ORDERING INFORMATION
MPS5172 TO−92 5000 / Bulk
MPS5172RLRMG TO−92
(Pb−Free)
2000/Ammo Pac
k
MPS5172RLRM TO−92 2000/Ammo Pac
k
MPS5172G TO−92
(Pb−Free)
5000 / Bulk
MPS5172
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(I
C
= 10 mA, I
B
= 0)
V
(BR)CEO
25 − Vdc
Collector Cutoff Current
(V
CE
= 25 V, I
B
= 0)
I
CES
− 100 nAdc
Collector Cutoff Current
(V
CB
= 25 V, I
E
= 0)
(V
CB
= 25 V, I
E
= 0, T
A
= 100°C)
I
CBO
−
−
100
10
nAdc
mAdc
Emitter Cutoff Current
(V
EB
= 5.0 V, I
C
= 0)
I
EBO
− 100 nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(V
CE
= 10 V, I
C
= 10 mA)
h
FE
100 500 −
Collector−Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
V
CE(sat)
− 0.25 Vdc
Base−Emitter On Voltage
(I
C
= 10 mAdc, V
CE
= 10 V)
V
BE(on)
0.5 1.25 Vdc
SMALL−SIGNAL CHARACTERISTICS
Collector−Base Capacitance
(V
CB
= 10 V, f = 1.0 MHz)
C
cb
1.6 10 pF
Small−Signal Current Gain
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
fe
100 750 −
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
MPS5172
http://onsemi.com
3
TYPICAL STATIC CHARACTERISTICS
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
400
0.004
h , DC CURRENT GAIN
FE
T
J
= 125°C
−55°C
25°C
V
CE
= 1.0 V
V
CE
= 10 V
40
60
0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0
2.0
3.0
5.0 7.0 10 20 30 50 70 100
200
100
80
Figure 2. Collector Saturation Region
I
C
, COLLECTOR CURRENT (mA)
1.4
Figure 3. Collector Characteristics
I
C
, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20
50
1.6
100
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 1.0 V
*q
VC
for V
CE(sat)
q
VB
for V
BE
0.1 0.2 0.5
Figure 4. “On” Voltages
I
B
, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.002
T
J
= 25°C
I
C
= 1.0 mA 10 mA 100 mA
Figure 5. Temperature Coefficients
50 mA
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
40
60
80
100
20
0
0
I
C
, COLLECTOR CURRENT (mA)
T
A
= 25°C
PULSE WIDTH = 300 ms
DUTY CYCLE ≤ 2.0%
I
B
= 500 mA
400 mA
300 mA
200 mA
100 mA
*APPLIES for I
C
/I
B
≤ h
FE
/2
25°C to 125°C
−55°C to 25°C
25°C to 125°C
−55°C to 25°C
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 5.0 10 15 20 25 30 35 40
1.2
1.0
0.8
0.6
0.4
0.2
0
−2.4
0.8
0
−1.6
−0.8
1.0 2.0 5.0 10 20
50 100
0.1 0.2 0.5
V
, TEMPERATURE COEFFICIENTS (mV/ C)°θ
P1-P3P4-P6

MPS5172G

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Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT SS GP XSTR NPN 25V
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