MPS5172G

MPS5172
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4
TYPICAL DYNAMIC CHARACTERISTICS
C, CAPACITANCE (pF)
Figure 6. Current−Gain − Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
Figure 7. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
500
0.5
10
f, CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
T
50
70
100
200
300
0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
T
J
= 25°C
f = 100 MHz
V
CE
= 20 V
5.0 V
1.0
2.0
3.0
5.0
7.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 500.05
T
J
= 25°C
f = 1.0 MHz
C
ib
C
ob
MPS5172
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5
Figure 8. Thermal Response
t, TIME (ms)
1.0
0.01
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k
50k
100k
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
DUTY CYCLE, D = t
1
/t
2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
(SEE AN−569)
Z
q
JA(t)
= r(t) R
q
JA
T
J(pk)
− T
A
= P
(pk)
Z
q
JA(t)
t
1
t
2
P
(pk)
FIGURE 9
Figure 10.
T
J
, JUNCTION TEMPERATURE (°C)
10
4
−40
I
C
, COLLECTOR CURRENT (nA)
Figure 11.
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
400
2.0
I
C
, COLLECTOR CURRENT (mA)
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by
the model as shown in Figure 9. Using the model and the de-
vice thermal response the normalized effective transient
thermal resistance of Figure 8 was calculated for various
duty cycles.
To find Z
q
JA(t)
, multiply the value obtained from Figure
8 by the steady state value R
q
JA
.
Example:
The MPS3904 is dissipating 2.0 watts peak under the follow-
ing conditions:
t
1
= 1.0 ms, t
2
= 5.0 ms. (D = 0.2)
Using Figure 8 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
The peak rise in junction temperature is therefore
DT = r(t) x P
(pk)
x R
q
JA
= 0.22 x 2.0 x 200 = 88°C.
For more information, see ON Semiconductor Applica-
tion Note AN569/D, available from the Literature Distribu-
tion Center or on our website at www.onsemi.com.
The safe operating area curves indicate I
C
−V
CE
limits
of the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 11 is based upon T
J(pk)
= 150°C; T
C
or
T
A
is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided T
J(pk)
150°C. T
J(pk)
may be calculated from the data in Figure 8. At high case or
ambient temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
10
−2
10
−1
10
0
10
1
10
2
10
3
20 0 + 20 + 40 + 60 + 80 + 100 +120 +140 +160
V
CC
= 30 Vdc
I
CEO
I
CBO
AND
I
CEX
@ V
BE(off)
= 3.0 Vdc
T
A
= 25°C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1.0 ms
10 ms
T
C
= 25°C
1.0 s
dc
dc
4.0
6.0
10
20
40
60
100
200
4.0 6.0 8.0 10 20
40
T
J
= 150°C
100 ms
MPS5172
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6
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X−X
C
V
D
N
N
XX
SEATING
PLANE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 −−− 12.70 −−−
L 0.250 −−− 6.35 −−−
N 0.080 0.105 2.04 2.66
P −−− 0.100 −−− 2.54
R 0.115 −−− 2.93 −−−
V 0.135 −−− 3.43 −−−
1
CASE 29−11
ISSUE AL
TO−92 (TO−226)
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
3. SOURCE
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MPS5172/D
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MPS5172G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT SS GP XSTR NPN 25V
Lifecycle:
New from this manufacturer.
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