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KAF-1603-AAA-CP-B2

P1-P3P4-P6P7-P9P10-P12P13-P15
© Semiconductor Components Industries, LLC, 2014
February, 2017 − Rev. 2
1 Publication Order Number:
KAF−1603/D
KAF-1603
1536 (H) x 1024 (V) Full
Frame CCD Image Sensor
Description
The KAF−1603 Image Sensor is a high performance monochrome
area CCD (charge-coupled device) image sensor with 1536 (H) ×
1024 (V) photoactive pixels designed for a wide range of image
sensing applications.
The sensor incorporates true two-phase CCD technology,
simplifying the support circuits required to drive the sensor as well as
reducing dark current without compromising charge capacity.
The sensor also utilizes the TRUESENSE Transparent Gate Electrode
to improve sensitivity compared to the use of a standard front side
illuminated polysilicon electrode.
Optional microlenses focus the majority of the light through the
transparent gate, increasing the optical response further.
Table 1. GENERAL SPECIFICATIONS
Parameter Typical Value
Architecture Full Frame CCD
Total Number of Pixels 1552 (H) × 1032 (V)
Number of Active Pixels 1536 (H) × 1024 (V) = approx. 1.6 Mp
Pixel Size
9.0 mm (H) × 9.0 mm (V)
Active Image Size 13.8 mm (H) × 9.2 mm (V)
16.6 mm (Diagonal)
1″ Optical Format
Die Size 15.5 mm (H) × 10.0 mm (V)
Aspect Ratio 3:2
Saturation Signal 100,000 electrons
Output Sensitivity
10 mV/e
−
Quantum Efficiency
(with Microlens)
Peak: 77%
400 nm: 45%
Quantum Efficiency
(no Microlens)
Peak: 65%
400 nm: 30%
Read Noise 15 electrons
Dark Current < 10 pA/cm
2
Dark Current Doubling Tempera-
ture
6.3°C
Dynamic Range 74 dB
Charge Transfer Efficiency > 0.99999
Blooming Suppression None
Maximum Date Rate 10 MHz
Package CERDIP Package (Sidebrazed)
Cover Glass Clear or AR Coated, 2 Sides
NOTE: Parameters above are specified at T = 25°C unless otherwise noted.
www.onsemi.com
Figure 1. KAF−1603 CCD Image Sensor
Features
• True Two Phase Full Frame Architecture
• TRUESENSE Transparent Gate Electrode
for High Sensitivity
Applications
• Scientific Imaging
See detailed ordering and shipping information on page 2 o
f
this data sheet.
ORDERING INFORMATION
KAF−1603
www.onsemi.com
2
ORDERING INFORMATION
Table 2. ORDERING INFORMATION − KAF−1603 IMAGE SENSOR
Part Number Description Marking Code
KAF−1603−ABA−CD−B2 Monochrome, Telecentric Microlens, CERDIP Package (Sidebrazed),
Clear Cover Glass with AR Coating (Both Sides), Grade 2
KAF−1603−ABA
Serial Number
KAF−1603−ABA−CD−AE Monochrome, Telecentric Microlens, CERDIP Package (Sidebrazed),
Clear Cover Glass with AR Coating (Both Sides), Engineering Sample
KAF−1603−ABA−CP−B2 Monochrome, Telecentric Microlens, CERDIP Package (Sidebrazed),
Taped Clear Cover Glass (No Coatings), Grade 2
KAF−1603−ABA−CP−AE Monochrome, Telecentric Microlens, CERDIP Package (Sidebrazed),
Taped Clear Cover Glass (No Coatings), Engineering Sample
KAF−1603−AAA−CP−B2 Monochrome, No Microlens, CERDIP Package (Sidebrazed),
Taped Clear Cover Glass (No Coatings), Grade 2
KAF−1603−AAA
Serial Number
KAF−1603−AAA−CP−AE Monochrome, No Microlens, CERDIP Package (Sidebrazed),
Taped Clear Cover Glass (No Coatings), Engineering Sample
Table 3. ORDERING INFORMATION − EVALUATION SUPPORT
Part Number Description
KAF−1603−12−5−A−EVK Evaluation Board (Complete Kit)
See the ON Semiconductor Device Nomenclature document (TND310/D) for a full description of the naming convention
used for image sensors. For reference documentation, including information on evaluation kits, please visit our web site at
www.onsemi.com
.
KAF−1603
www.onsemi.com
3
DEVICE DESCRIPTION
Architecture
Figure 2. Block Diagram
V
RD
fR
V
DD
V
OUT
V
SS
SUB
V
OG
4 Dark
10 Inactive
12 Dark
2 Inactive
4 Dark Lines
fV1
fV2
GUARD
fH1
fH2
KAF−1603
Usable Active Image Area
1536 (H) × 1024 (V)
9 × 9 mm Pixels
3:2 Aspect Ratio
4 Dark Lines
1536 Active Pixels/Line
The sensor consists of 1,552 parallel (vertical) CCD shift
registers each 1,032 elements long. These registers act as
both the photosensitive elements and as the transport circuits
that allow the image to be sequentially read out of the sensor.
The parallel (vertical) CCD registers transfer the image one
line at a time into a single 1,564 element (horizontal) CCD
shift register. The horizontal register transfers the charge to
a single output amplifier. The output amplifier is a two-stage
source follower that converts the photo-generated charge to
a voltage for each pixel.
Microlenses
Micro lenses are formed along each row. They are
effectively half of a cylinder centered on the transparent
gates, extending continuously in the row direction. They act
to direct the photons away from the polysilicon gate and
through the transparent gate. This increases the response,
especially at the shorter wavelengths (< 600 nm).
Figure 3. Microlens Cross-Section
Silicon
Microlens
V1 V2
P1-P3P4-P6P7-P9P10-P12P13-P15

KAF-1603-AAA-CP-B2

Mfr. #:
Buy KAF-1603-AAA-CP-B2
Manufacturer:
ON Semiconductor
Description:
Image Sensors FULL FRAME CCD IMAGE SENSOR
Lifecycle:
New from this manufacturer.
Delivery:
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