KAF−1603
www.onsemi.com
7
IMAGING PERFORMANCE
Table 5. TYPICAL OPERATIONAL CONDITIONS
(All values measured at 25°C, and nominal operating conditions. These parameters exclude defective pixels.)
Description Symbol Min. Nom. Max. Units Notes
Verification
Plan
Saturation Signal
Vertical CCD Capacity
Horizontal CCD Capacity
Output Node Capacity
N
SAT
85,000
170,000
190,000
100,000
200,000
220,000
−
−
240,000
e
−
/pix 1 Design
9
Quantum Efficiency
Microlens
No Microlens
−
−
−
−
77%
65%
% QE Design
9
Photoresponse Non-Linearity PRNL − 1.0 2.0 % 2 Design
9
Photoresponse Non-Uniformity PRNU − 0.8 − % 3 Die
8
Dark Signal J
DARK
−
−
10
2
50
10
e
−
/pix/sec
pA/cm
2
4 Die
8
Dark Signal Doubling Temperature − 6.3 7 °C Design
9
Dark Signal Non-Uniformity DSNU − 10 50 e
−
/pix/sec 5 Die
8
Dynamic Range DR 72 74 − dB 6 Design
9
Charge Transfer Efficiency CTE 0.99997 0.99999 − Die
8
Output Amplifier DC Offset V
ODC
V
RD
V
RD
+ 0.5 V
RD
+ 1.0 V Die
8
Output Amplifier Sensitivity V
OUT
/N
e
−
9 10 −
mV/e
−
Design
9
Output Amplifier Output Impedance Z
OUT
180 200 220
W
Design
9
Noise Floor n
e
−
− 15 20 electrons 7 Die
8
1. For pixel binning applications, electron capacity up to 330,000 can be achieved with modified CCD inputs.
2. Worst case deviation from straight line fit, between 2% and 90% of V
SAT
.
3. One Sigma deviation of a 128 × 128 sample when CCD illuminated uniformly at half of saturation.
4. Average of all pixels with no illumination at 25°C.
5. Average dark signal of any of 11 × 8 blocks within the sensor (each block is 128 × 128 pixels).
6. 20log (N
SAT
/n
e
−
) at nominal operating frequency and 25°C.
7. Noise floor is specified at the nominal pixel frequency and excludes any dark or pattern noises. It is dominated by the output amplifier power
spectrum with a bandwidth = 5 × pixel rate.
8. A parameter that is measured on every sensor during production testing.
9. A parameter that is quantified during the design verification activity.
