VS-SD200N/R Series
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Vishay Semiconductors
Revision: 26-Apr-17
2
Document Number: 93541
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FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
at case temperature
I
F(AV)
180° conduction, half sine wave
200 A
110 °C
Maximum average forward current
at case temperature
220 A
100 °C
Maximum RMS forward current I
F(RMS)
DC at 95 °C case temperature 314
A
Maximum peak, one-cycle forward,
non-repetitive surge current
I
FSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial
T
J
= T
J
maximum
4700
t = 8.3 ms 4920
t = 10 ms
100 % V
RRM
reapplied
3950
t = 8.3 ms 4140
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
110
kA
2
s
t = 8.3 ms 101
t = 10 ms
100 % V
RRM
reapplied
78
t = 8.3 ms 71
Maximum I
2
Öt for fusing I
2
Öt t = 0.1 to 10 ms, no voltage reapplied 1100 kA
2
Ös
Low level value of threshold voltage V
F(TO)1
(16.7 % x π x I
F(AV)
< I < π x I
F(AV)
),
T
J
= T
J
maximum
0.90
V
High level value of threshold voltage V
F(TO)2
(I > π x I
F(AV)
), T
J
= T
J
maximum 1.00
Low level value of forward slope resistance r
f1
(16.7 % x π x I
F(AV)
< I < π x I
F(AV)
),
T
J
= T
J
maximum
0.79
mW
High level value of forward slope resistance r
f2
(I > π x I
F(AV)
), T
J
= T
J
maximum 0.64
Maximum forward voltage drop V
FM
I
pk
= 630 A, T
J
= T
J
maximum,
t
p
= 10 ms sinusoidal wave
1.40 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS
SD200N/R
UNITS
1600 to 2000 2400
Maximum junction operating
temperature range
T
J
-40 to 180 -40 to 150
°C
Maximum storage temperature range T
Stg
-55 to 200
Maximum thermal resistance,
junction to case
R
thJC
DC operation 0.23
K/W
Maximum thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth, flat and greased 0.08
Maximum allowed
mounting torque ± 10 %
Not-lubricated threads 14 Nm
Approximate weight 120 g
Case style See dimensions (link at the end of datasheet) DO-30 (DO-205AC)
