VS-SD200N/R Series
www.vishay.com
Vishay Semiconductors
Revision: 26-Apr-17
4
Document Number: 93541
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - Forward Voltage Drop Characteristics
Average Forward Current (A)
Maximum Average Forward Power Loss (W)
Maximum Allowable Ambient Temperature (°C)
0
50
100
150
200
250
300
350
400
0 50 100 150 200 250 300 35
0
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
SD200N/R Series
T
j = Tj max
40 60 80 100 120 140 160 180
0.3 K/W
0.4 K/W
0.2 K/W
0.12 K/W
1.4 K/W
1.8 K/W
0.6 K/W
0.8 K/W
RthSA = 0.08 K/W - Delta R
Peak Half Sine Wave Forward Current (A)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
1000
1500
2000
2500
3000
3500
4000
4500
1 10 10
0
SD200N/R Series
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = Tj max.
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Pulse Train Duration (s)
Peak Half Sine Wave Forward Current (A)
1000
1500
2000
2500
3000
3500
4000
4500
5000
0.01 0.1 1
Versus Pulse Train Duration.
Maximum Non Repetitive Surge Current
SD200N/R Series
Initial Tj = Tj max.
No Voltage Reapplied
Rated V
rrm
Reapplied
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
100
1000
10 000
0.5 1 1.5 2 2.5 3 3.5
SD200N/R Series
T
j
= 25 °C
T
j
= T
j
max.
