NP40N10YDF-E1-AY Datasheet NP40N10PDF-E1-AY, NP40N10VDF-E1-AY, NP40N10VDF-E2-AY | P1-P3

R07DS0361EJ0201 Rev.2.01 Page 1 of 9

May 13, 2013

Preliminary Data Sheet

NP40N10YDF, NP40N10VDF, NP40N10PDF

100 V – 40 A – N-channel Power MOS FET

Application: Automotive

Description

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

• Low on-state resistance

⎯ R

DS(on)

= 25 mΩ MAX. (V

GS

= 10 V, I

D

= 20 A) (NP40N10YDF)

⎯ R

DS(on)

= 26 mΩ MAX. (V

GS

= 10 V, I

D

= 20 A) (NP40N10VDF)

⎯ R

DS(on)

= 27 mΩ MAX. (V

GS

= 10 V, I

D

= 20 A) (NP40N10PDF)

• Low C

iss

: C

iss

= 2100 pF TYP. (V

DS

= 25 V, V

GS

= 0 V)

• Logic level drive type

• Designed for automotive application and AEC-Q101 qualified

Outline

1, 2, 3 : Source

4 : Gate

5, 6, 7, 8: Drain

Source

Body

Diode

Gate

Drain

8-pin HSON

1. Gate

2. Drain

3. Source

4. Fin (Drain)

1. Gate

2. Drain

3. Source

4. Fin (Drain)

TO-252 TO-263

1

2

3

4

5

6

7

8

1

2

3

4

1

2

3

4

Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and

ultimately degrade the device operation. Steps must be taken to stop generation of static electricity

as much as possible, and quickly dissipate it once, when it has occurred.

Ordering Information

Part No. Lead Plating Packing Package

NP40N10YDF-E1-AY

*

1

Pure Sn (Tin) Tape 2500 p/reel Taping (E1 type) 8-pin HSON

NP40N10YDF-E2-AY

*

1

Taping (E2 type)

NP40N10VDF-E1-AY

*

1

Pure Sn (Tin) Tape 2500 p/reel Taping (E1 type) TO-252 (MP-3ZP)

NP40N10VDF-E2-AY

*

1

Taping (E2 type)

NP40N10PDF-E1-AY

*

1

Pure Sn (Tin) Tape 800 p/reel Taping (E1 type) TO-263 (MP-25ZP)

NP40N10PDF-E2-AY

*

1

Taping (E2 type)

Note: *1. Pb-free (This product does not contain Pb in the external electrode)

R07DS0361EJ0201

Rev.2.01

May 13, 2013

NP40N10YDF, NP40N10VDF, NP40N10PDF Preliminary

R07DS0361EJ0201 Rev.2.01 Page 2 of 9

May 13, 2013

Absolute Maximum Ratings (T

A

= 25°C)

Item Symbol Ratings Unit

Drain to Source Voltage (V

GS

= 0 V) V

DSS

100 V

Gate to Source Voltage (V

DS

= 0 V) V

GSS

±20 V

Drain Current (DC) (T

C

= 25°C) I

D(DC)

±40 A

Drain Current (pulse)

∗

1

I

D(pulse)

±80 A

Total Power Dissipation (T

C

= 25°C) P

T1

120 W

NP40N10YDF

Total Power Dissipation (T

A

= 25°C)

∗

2

P

T2

1.0 W

NP40N10VDF

Total Power Dissipation (T

A

= 25°C)

∗

2

1.2

NP40N10PDF

Total Power Dissipation (T

A

= 25°C)

1.8

Channel Temperature T

ch

175 °C

Storage Temperature T

stg

−55 to +175 °C

Single Avalanche Current

∗

3

I

AS

25 A

Single Avalanche Energy

∗

3

E

AS

61 mJ

Thermal Resistance

Channel to Case Thermal Resistance R

th(ch-C)

1.25 °C/W

Channel to Ambient Thermal Resistance

∗

2

R

th(ch-A)

NP40N10YDF 150 °C/W

NP40N10VDF 125 °C/W

NP40N10PDF 83.3 °C/W

Notes: *1. T

C

= 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%

*2. Mounted on glass epoxy substrate of 40 mm × 40 mm × 1.6 mmt with 4% copper area (35 μm)

*3. T

ch(start)

= 25°C, V

DD

= 50 V, R

G

= 25 Ω, L = 100 μH, V

GS

= 20 V → 0 V

NP40N10YDF, NP40N10VDF, NP40N10PDF Preliminary

R07DS0361EJ0201 Rev.2.01 Page 3 of 9

May 13, 2013

Electrical Characteristics (T

A

= 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Zero Gate Voltage Drain Current I

DSS

1 μA V

DS

= 100 V, V

GS

= 0 V

Gate Leakage Current I

GSS

±100 nA V

GS

= ±20 V, V

DS

= 0 V

Gate to Source Threshold Voltage

V

GS(th)

1.5 2.0 2.5 V V

DS

= V

GS

, ID = 250 μA

Forward Transfer Admittance

∗

1

| y

fs

| 20 40 S V

DS

= 5.0 V, I

D

= 20 A

Drain to Source

On-state

Resistance

∗

1

NP40N10YDF R

DS(on)1

21 25 mΩ V

GS

= 10 V, I

D

= 20 A

R

DS(on)2

23 30 mΩ V

GS

= 5.0 V, I

D

= 20 A

R

DS(on)3

24 36 mΩ V

GS

= 4.5 V, I

D

= 20 A

NP40N10VDF R

DS(on)1

21 26 mΩ V

GS

= 10 V, I

D

= 20 A

R

DS(on)2

23 31 mΩ V

GS

= 5.0 V, I

D

= 20 A

R

DS(on)3

24 37 mΩ V

GS

= 4.5 V, I

D

= 20 A

NP40N10PDF R

DS(on)1

21 27 mΩ V

GS

= 10 V, I

D

= 20 A

R

DS(on)2

23 32 mΩ V

GS

= 5.0 V, I

D

= 20 A

R

DS(on)3

24 38 mΩ V

GS

= 4.5 V, I

D

= 20 A

Input Capacitance C

iss

2100 3150 pF V

DS

= 25 V,

Output Capacitance C

oss

200 300 pF V

GS

= 0 V,

Reverse Transfer Capacitance C

rss

80 144 pF f = 1 MHz

Turn-on Delay Time t

d(on)

15 33 ns V

DD

= 50 V, I

D

= 20 A,

Rise Time t

r

16 40 ns V

GS

= 10 V,

Turn-off Delay Time t

d(off)

60 120 ns R

G

= 0 Ω

Fall Time t

f

5 13 ns

Total Gate Charge Q

G

47 71 nC V

DD

= 80 V,

V

GS

= 10 V,

I

D

= 40 A

Gate to Source Charge Q

GS

8 nC

Gate to Drain Charge Q

GD

12 nC

Body Diode Forward Voltage

∗

1

V

F(S-D)

0.9 1.5 V I

F

= 40 A, V

GS

= 0 V

Reverse Recovery Time t

rr

67 ns I

F

= 40 A, V

GS

= 0 V,

di/dt = 100 A/μs

Reverse Recovery Charge Q

rr

162 nC

Note: *1. Pulsed test

TEST CIRCUIT 3 GATE CHARGE

V

GS

= 20 → 0 V

PG.

R

G

= 25 Ω

50 Ω

D.U.T.

L

V

DD

TEST CIRCUIT 1 AVALANCHE CAPABILITY

PG.

D.U.T.

R

L

V

DD

TEST CIRCUIT 2 SWITCHING TIME

R

G

PG.

I

G

= 2 mA

50 Ω

D.U.T.

R

L

V

DD

I

D

V

DD

I

AS

V

DS

BV

DSS

Starting T

ch

V

GS

0

Duty Cycle ≤ 1%

τ = 1 μs

τ

V

GS

Wave Form

V

DS

Wave Form

V

GS

V

DS

10%

0

90%

V

GS

V

DS

t

on

t

off

t

d(on)

t

r

t

d(off)

t

f

10% 10%

NP40N10YDF-E1-AY

NP40N10YDF-E1-AY

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