NP40N10YDF, NP40N10VDF, NP40N10PDF Preliminary
R07DS0361EJ0201 Rev.2.01 Page 7 of 9
May 13, 2013
V
GS
= 10 V
0 V
t
d(off)
t
r
t
d(on)
t
f
5.0 V
V
GS
= 4.5 V
10 V
C
iss
C
oss
C
rss
V
DS
V
DD
= 80 V
50 V
20 V
V
GS
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10
100
1000
10000
0.01 0.1 1 10 100
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance -pF
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1
10
100
0.1 1 10 100
I
F
- Drain Current - A
t
rr
- Reverse Recovery Time - ns
SWITCHING CHARACTERISTICS
1
10
100
1000
0.1 1 10 100
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
4
2
6
8
12
10
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
V
GS
- Gate to Source Voltage - V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1
V
F(S-D)
- Source to Drain Voltage - V
I
F
- Diode Forward Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
–100 –50 0 50 100 150 200
T
ch
- Channel Temperature - °C
R
DS(on)
- Drain to Source On-State Resistance - mΩ
0302010 5040
V
DD
= 50 V
V
GS
= 10 V
R
G
= 0 Ω
Pulsed
di/dt = 100 A/μs
V
GS
= 0 V
I
D
= 20 A
Pulsed
V
GS
= 0 V
f = 1 MHz
I
D
= 40 A
70
60
50
40
30
20
10
0
90
70
80
60
50
40
30
20
10
0
