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BUK9E06-55A,127

P1-P3P4-P6P7-P9P10-P12P13-P15
BUK9E06-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 31 May 2010 3 of 14
NXP Semiconductors
BUK9E06-55A
N-channel TrenchMOS logic level FET
4. Limiting values
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175°C --55V
V
DGR
drain-gate voltage R
GS
=20kΩ --55V
V
GS
gate-source voltage -15 - 15 V
I
D
drain current V
GS
=5V; T
j
=25°C;
see Figure 3; see Figure 1
[1]
- - 154 A
[2]
--75A
V
GS
=5V; T
j
= 100 °C; see Figure 1
[2]
--75A
I
DM
peak drain current T
mb
=25°C; t
p
≤ 10 µs; pulsed;
see Figure 3
- - 616 A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 - - 300 W
T
stg
storage temperature -55 - 175 °C
T
j
junction temperature -55 - 175 °C
Source-drain diode
I
S
source current T
mb
=25°C
[1]
- - 154 A
[2]
--75A
I
SM
peak source current t
p
≤ 10 µs; pulsed; T
mb
= 25 °C - - 616 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
=75A; V
sup
≤ 55 V; R
GS
=50Ω;
V
GS
=5V; T
j(init)
= 25 °C; unclamped
--1.1J
BUK9E06-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 31 May 2010 4 of 14
NXP Semiconductors
BUK9E06-55A
N-channel TrenchMOS logic level FET
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
03ne93
0
50
100
150
200
25 50 75 100 125 150 175 200
T
mb
(°C)
I
D
(A)
Capped at 75 A due to package
T
mb
(°C)
0 20015050 100
03na19
40
80
120
P
der
(%)
0
03nf02
V
DS
(V)
1 10
2
10
10
2
10
10
3
I
D
(A)
1
t
p
t
p
T
P
t
T
δ =
capped at 75 A due to package
R
DSon
= V
DS
/I
D
100 μs
1 ms
10 ms
100 ms
t
p
= 10 μs
D.C.
BUK9E06-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 31 May 2010 5 of 14
NXP Semiconductors
BUK9E06-55A
N-channel TrenchMOS logic level FET
5. Thermal characteristics
6. Characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance
from junction to
mounting base
see Figure 4 --0.5K/W
R
th(j-a)
thermal resistance
from junction to
ambient
vertical in still air - 60 - K/W
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
03nf03
t
p
(s)
10
−6
10
−1
110
−2
10
−3
10
−5
10
−4
10
−1
10
−2
1
Z
th(j-mb)
(K/W)
10
−3
t
p
t
p
T
P
t
T
δ =
δ = 0.5
0.2
0.1
0.05
0.02
single shot
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
=0.25mA; V
GS
=0V; T
j
=25°C 55--V
I
D
=0.25mA; V
GS
=0V; T
j
= -55 °C 50 - - V
V
GS(th)
gate-source threshold
voltage
I
D
=1mA; V
DS
=V
GS
; T
j
=25°C;
see Figure 11
11.52V
I
D
=1mA; V
DS
=V
GS
; T
j
=-55°C;
see Figure 11
--2.3V
I
D
=1mA; V
DS
=V
GS
; T
j
= 175 °C;
see Figure 11
0.5--V
I
DSS
drain leakage current V
DS
=55V; V
GS
=0V; T
j
= 175 °C - - 500 µA
V
DS
=55V; V
GS
=0V; T
j
= 25 °C - 0.05 10 µA
I
GSS
gate leakage current V
DS
=0V; V
GS
=10V; T
j
= 25 °C - 2 100 nA
V
DS
=0V; V
GS
=-10V; T
j
= 25 °C - 2 100 nA
P1-P3P4-P6P7-P9P10-P12P13-P15

BUK9E06-55A,127

Mfr. #:
Buy BUK9E06-55A,127
Manufacturer:
Nexperia
Description:
MOSFET N-CH 55V 75A I2PAK
Lifecycle:
New from this manufacturer.
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