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BUK9E06-55A,127

P1-P3P4-P6P7-P9P10-P12P13-P15
BUK9E06-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 31 May 2010 6 of 14
NXP Semiconductors
BUK9E06-55A
N-channel TrenchMOS logic level FET
R
DSon
drain-source on-state
resistance
V
GS
=5V; I
D
=25A; T
j
= 175 °C;
see Figure 12
; see Figure 13
- - 13.2 mΩ
V
GS
=10V; I
D
=25A; T
j
=25°C - 4.8 5.8 mΩ
V
GS
=4.5V; I
D
=25A; T
j
=25°C --6.7mΩ
V
GS
=5V; I
D
=25A; T
j
=25°C;
see Figure 12; see Figure 13
-5.36.3mΩ
Dynamic characteristics
C
iss
input capacitance V
GS
=0V; V
DS
=25V; f=1MHz;
T
j
=25°C; see Figure 14
- 6500 8600 pF
C
oss
output capacitance - 1000 1200 pF
C
rss
reverse transfer
capacitance
- 650 850 pF
t
d(on)
turn-on delay time V
DS
=30V; R
L
=1.2Ω; V
GS
=5V;
R
G(ext)
=10Ω; T
j
=25°C
-45-ns
t
r
rise time - 180 - ns
t
d(off)
turn-off delay time - 420 - ns
t
f
fall time - 235 - ns
L
D
internal drain
inductance
from drain lead 6 mm from package to
centre of die ; T
j
=25°C
-4.5-nH
from upper edge of drain mounting base
to centre of die ; T
j
=25°C
-2.5-nH
L
S
internal source
inductance
from source lead to source bond pad ;
T
j
=25°C
-7.5-nH
Source-drain diode
V
SD
source-drain voltage I
S
=30A; V
GS
=0V; T
j
=25°C;
see Figure 15
- 0.85 1.2 V
t
rr
reverse recovery time I
S
=20A; dI
S
/dt = -100 A/µs;
V
GS
=-10V; V
DS
=30V; T
j
=25°C
-80-ns
Q
r
recovered charge - 200 - nC
Table 6. Characteristics
…continued
Symbol Parameter Conditions Min Typ Max Unit
BUK9E06-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 31 May 2010 7 of 14
NXP Semiconductors
BUK9E06-55A
N-channel TrenchMOS logic level FET
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
03ne99
0
50
100
150
200
250
300
350
400
0246810
V
DS
(V)
I
D
(A)
4
5
6
7
10
V
GS
(V) =
3
2.4
V
GS
(V)
210846
03ne98
6
5
7
8
R
DSon
(mΩ)
4
03aa36
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
0123
V
GS
(V)
I
D
(A)
maxtypmin
I
D
(A)
0 1008040 6020
03ne96
140
g
fs
(S)
100
60
20
0
40
80
120
BUK9E06-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 31 May 2010 8 of 14
NXP Semiconductors
BUK9E06-55A
N-channel TrenchMOS logic level FET
Fig 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 10. Gate-source voltage as a function of gate
charge; typical values
Fig 11. Gate-source threshold voltage as a function of
junction temperature
Fig 12. Drain-source on-state resistance as a function
of drain current; typical values
V
GS
(V)
3.52.50.5 3.02.01.00 1.5
03ne97
100
I
D
(A)
0
20
40
60
80
T
j
= 175 °C T
j
= 25 °C
03ne95
Q
G
(nC)
0 1006020 1208040
2
3
1
4
5
V
GS
(V)
0
V
DD
= 14 V V
DD
= 44 V
03aa33
0
0.5
1
1.5
2
2.5
-60 0 60 120 180
T
j
(
°
C)
V
GS(th)
(V)
max
typ
min
I
D
(A)
0 1008040 6020
03nf00
6
5
7
8
R
DSon
(mΩ)
4
V
GS
(V) = 3
3.2
3.4
3.6
4
5
P1-P3P4-P6P7-P9P10-P12P13-P15

BUK9E06-55A,127

Mfr. #:
Buy BUK9E06-55A,127
Manufacturer:
Nexperia
Description:
MOSFET N-CH 55V 75A I2PAK
Lifecycle:
New from this manufacturer.
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