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LTC1255CN8#PBF

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
1
LTC1255
Dual 24V High-Side
MOSFET Driver
The LTC1255 dual high-side driver allows using low
cost N-channel FETs for high-side industrial and auto-
motive switching applications. An internal charge pump
boosts the gate drive voltage above the positive rail,
fully enhancing an N-channel MOS switch with no
external components. Low power operation, with 12µA
standby current, allows use in virtually all systems with
maximum efficiency.
Included on-chip is independent overcurrent sensing
to provide automatic shutdown in case of short circuits.
A time delay can be added to the current sense to
prevent false triggering on high in-rush current loads.
The LTC1255 operates from 9V to 24V supplies and is
well suited for industrial and automotive applications.
The LTC1255 is available in both an 8-pin DIP and an
8-pin SOIC.
S
F
EA
T
U
RE
■
Fully Enhances N-Channel Power MOSFETs
■
12µA Standby Current
■
Operates at Supply Voltages from 9V to 24V
■
Short Circuit Protection
■
Easily Protected Against Supply Transients
■
Controlled Switching ON and OFF Times
■
No External Charge Pump Components
■
Compatible With Standard Logic Families
■
Available in 8-Pin SOIC
U
S
A
O
PP
L
IC
AT
I
■
Solenoid Drivers
■
DC Motor Drivers
■
Stepper Motor Drivers
■
Lamp Drivers/Dimmers
■
Relay Drivers
■
Low Frequency H-Bridge
■
P-Channel Switch Replacement
D
U
ESCRIPTIO
U
A
O
PP
L
IC
AT
ITY
P
I
CA
L
12V
1N4001
+
10µF
IRLR024
24V
24V/0.5A
SOLENOID
V
S
DS2
LTC1255
IN2
GND
DS1
IN1
G1
G2
0.036Ω 0.036Ω
IRLR024
12V
1N4001
24V/0.5A
SOLENOID
FROM
µP, ETC.
FROM
µP, ETC.
LTC1255 • TA01
Standby Supply CurrentDual 24V High-Side Switch with Overcurrent Protection
SUPPLY VOLTAGE (V)
0
0
SUPPLY CURRENT (µA)
10
15
20
25
30
35
5
10
15 20
LTC1255 • TA02
25
40
45
50
5
30
V
IN1
= V
IN2
= 0V
T
A
= 25°C
2
LTC1255
Supply Voltage ......................................... –0.3V to 30V
Transient Supply Voltage (<10ms) ......................... 40V
Input Voltage ..................... (V
S
+ 0.3V) to (GND – 0.3V)
Gate Voltage ...................... (V
S
+ 20V) to (GND – 0.3V)
Current (Any Pin)................................................. 50mA
A
U
G
W
A
W
U
W
ARB
S
O
LU
T
EXI T
I
S
Operating Temperature Range
LTC1255C............................................... 0°C to 70°C
LTC1255I........................................... –40°C to 85°C
Storage Temperature Range ................ – 65°C to 150°C
Lead Temperature (Soldering, 10 sec)................. 300°C
WU
U
PACKAGE
/
O
RDER I FOR ATIO
ORDER PART
NUMBER
ORDER PART
NUMBER
T
JMAX
= 100°C,
θ
JA
= 130°C/ W T
JMAX
= 100°C,
θ
JA
= 150°C/W
1
2
3
4
8
7
6
5
TOP VIEW
DS1
GATE 1
GND
IN1
DS2
GATE 2
V
S
IN2
N8 PACKAGE
8-LEAD PLASTIC DIP
1
2
3
4
8
7
6
5
TOP VIEW
DS2
GATE 2
V
S
IN2
DS1
GATE 1
GND
IN1
S8 PACKAGE
8-LEAD PLASTIC SOIC
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
I
Q
Quiescent Current OFF V
S
= 10V, V
IN
= 0V (Note 1) 12 40 µA
V
S
= 18V, V
IN
= 0V (Note 1) 12 40 µA
V
S
= 24V, V
IN
= 0V (Note 1) 12 40 µA
Quiescent Current ON V
S
= 10V, V
GATE
= 22V, V
IN
= 5V (Note 2) 160 400 µA
V
S
= 18V, V
GATE
= 30V, V
IN
= 5V (Note 2) 350 800 µA
V
S
= 24V, V
GATE
= 36V, V
IN
= 5V (Note 2) 600 1200 µA
V
INH
Input High Voltage ● 2V
V
INL
Input Low Voltage ● 0.8 V
I
IN
Input Current 0V ≤ V
IN
≤ V
S
● ±1 µA
C
IN
Input Capacitance 5pF
V
SEN
Drain Sense Threshold Voltage 80 100 120 mV
● 75 100 125 mV
I
SEN
Drain Sense Input Current 0V ≤ V
SEN
≤ V
S
● ±0.1 µA
V
GATE
– V
S
Gate Voltage Above Supply V
S
= 9V ● 7.5 10.5 12 V
I
GATE
Gate Output Drive Current V
S
= 18V, V
GATE
= 30V ● 520 µA
V
S
= 24V, V
GATE
= 36V ● 523 µA
E
LECTR
IC
AL C CHARA TERIST
ICS
V
S
= 9V to 24V, T
A
= 25°C, unless otherwise noted.
LTC1255CN8
LTC1255IN8
S8 PART MARKING
LTC1255CS8
LTC1255IS8
1255
1255I
3
LTC1255
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
t
ON
Turn-ON Time V
S
= 10V, C
GATE
= 1000pF (Note 3)
Time for V
GATE
> V
S
+ 2V 30 100 300 µs
Time for V
GATE
> V
S
+ 5V 75 250 750 µs
V
S
= 18V, C
GATE
= 1000pF (Note 3)
Time for V
GATE
> V
S
+ 5V 40 120 400 µs
Time for V
GATE
> V
S
+ 10V 75 250 750 µs
V
S
= 24V, C
GATE
= 1000pF (Note 3)
Time for V
GATE
> V
S
+ 10V 50 180 500 µs
t
OFF
Turn-OFF Time V
S
= 10V, C
GATE
= 1000pF, (Note 3, 4) 10 24 60 µs
V
S
= 18V, C
GATE
= 1000pF, (Note 3, 4) 10 21 60 µs
V
S
= 24V, C
GATE
= 1000pF, (Note 3, 4) 10 19 60 µs
t
SC
Short-Circuit Turn-OFF Time V
S
= 10V, C
GATE
= 1000pF, (Note 3, 4) 5 16 30 µs
V
S
= 18V, C
GATE
= 1000pF, (Note 3, 4) 5 16 30 µs
V
S
= 24V, C
GATE
= 1000pF, (Note 3, 4) 5 16 30 µs
V
S
= 9V to 24V, T
A
= 25°C, unless otherwise noted.
E
LECTR
IC
AL C CHARA TERIST
ICS
The ● denotes specifications which apply over the full operating
temperature range.
Note 1: Quiescent current OFF is for both channels in OFF condition.
Note 2: Quiescent current ON is per driver and is measured independently.
The gate voltage is clamped to 12V above the rail to simulate the effects of
protection clamps connected across the GATE-SOURCE of the power
MOSFET.
Note 3: Zener diode clamps must be connected across the GATE-SOURCE
of the power MOSFET to limit V
GS
. 1N5242A (through hole) or
MMBZ5242A (surface mount) 12V Zener diodes are recommended. All
Turn-ON and Turn-OFF tests are performed with a 12V Zener clamp in
series with a small-signal diode connected between V
S
and the GATE
output to simulate the effects of a 12V protection Zener clamp connected
across the GATE-SOURCE of the power MOSFET.
Note 4: Time for V
GATE
to drop below 1V.
CCHARA TERIST
ICS
UW
AT
Y
P
I
CA
LPER
F
O
R
C
E
Standby Supply Current Gate Voltage Above SupplySupply Current per Driver (ON)
SUPPLY VOLTAGE (V)
0
0
V
GATE
– V
S
(V)
4
6
8
10
12
14
5
10
15 20
LTC1255 • TPC03
25
16
18
20
2
30
V
CLAMP
= 12V
SUPPLY VOLTAGE (V)
0
0
SUPPLY CURRENT (mA)
0.4
0.6
0.8
1.0
1.2
1.4
5
10
15 20
LTC1255 • TPC02
25
1.6
1.8
2.0
0.2
30
ONE INPUT = 0N
OTHER INPUT = OFF
T
A
= 25°C
SUPPLY VOLTAGE (V)
0
0
SUPPLY CURRENT (µA)
10
15
20
25
30
35
5
10
15 20
LTC1255 • TPC01
25
40
45
50
5
30
V
IN1
= V
IN2
= 0V
T
A
= 25°C
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

LTC1255CN8#PBF

Mfr. #:
Buy LTC1255CN8#PBF
Manufacturer:
Analog Devices / Linear Technology
Description:
Gate Drivers 2x 24V Hi-Side MOSFET Drvr
Lifecycle:
New from this manufacturer.
Delivery:
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