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NCV8406ADTRKG

P1-P3P4-P6P7-P9P10-P12
© Semiconductor Components Industries, LLC, 2015
November, 2015 − Rev. 4
1 Publication Order Number:
NCV8406/D
NCV8406, NCV8406A
Self-Protected Low Side
Driver with Temperature
and Current Limit
65 V, 7.0 A, Single N−Channel
NCV8406/A is a three terminal protected Low-Side Smart Discrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain-to-Gate clamping for overvoltage protection.
This device offers protection and is suitable for harsh automotive
environments.
Features
• Short Circuit Protection
• Thermal Shutdown with Automatic Restart
• Over Voltage Protection
• Integrated Clamp for Inductive Switching
• ESD Protection
• dV/dt Robustness
• Analog Drive Capability (Logic Level Input)
• These Devices are Faster than the Rest of the NCV Devices
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Switch a Variety of Resistive, Inductive and Capacitive Loads
• Can Replace Electromechanical Relays and Discrete Circuits
• Automotive / Industrial
Drain
Source
Temperature
Limit
Gate
Input
Current
Limit
Current
Sense
Overvoltage
Protection
ESD Protection
V
DSS
(Clamped)
R
DS(on)
TYP
I
D
TYP
(Limited)
65 V
210 mW
7.0 A
www.onsemi.com
SOT−223
CASE 318E
STYLE 3
MARKING
DIAGRAM
A = Assembly Location
Y = Year
W, WW = Work Week
xxxxx = V8406 or 8406A
G or G = Pb−Free Package
1
(Note: Microdot may be in either location)
1
AYW
xxxxxG
G
23
4
GATE
DRAIN
SOURCE
DRAIN
2
3
4
1
2
3
4
DPAK
CASE 369C
YWW
xxxxxG
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
ORDERING INFORMATION
NCV8406, NCV8406A
www.onsemi.com
2
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage Internally Clamped V
DSS
60 Vdc
Gate−to−Source Voltage V
GS
"14 Vdc
Drain Current Continuous I
D
Internally Limited
Total Power Dissipation − SOT−223 Version
@ T
A
= 25°C (Note 1)
@ T
A
= 25°C (Note 2)
P
D
1.25
1.81
W
Total Power Dissipation − DPAK Version
@ T
A
= 25°C (Note 1)
@ T
A
= 25°C (Note 2)
P
D
1.31
2.31
W
Thermal Resistance − SOT−223 Version
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
R
q
JC
R
q
JA
R
q
JA
7.0
100
69
°C/W
Thermal Resistance − DPAK Version
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
R
q
JC
R
q
JA
R
q
JA
1.0
95
54
°C/W
Single Pulse Inductive Load Switching Energy
(Starting T
J
= 25°C, V
DD
= 50 Vdc, V
GS
= 5.0 Vdc,
I
L
= 2.1 Apk, L = 50 mH, R
G
= 25 W)
E
AS
110 mJ
Load Dump Voltage (V
GS
= 0 and 10 V, R
I
= 2 W, R
L
= 7 W, t
d
= 400 ms)
V
LD
75 V
Operating Junction Temperature Range T
J
−40 to 150 °C
Storage Temperature Range T
stg
−55 to 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Surface mounted onto minimum pad size (100 sq/mm) FR4 PCB, 1 oz cu.
2. Mounted onto 1″ square pad size (700 sq/mm) FR4 PCB, 1 oz cu.
DRAIN
SOURCE
GATE
VDS
VGS
I
D
I
G
+
−
+
−
Figure 1. Voltage and Current Convention
NCV8406, NCV8406A
www.onsemi.com
3
MOSFET ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Clamped Breakdown Voltage
(V
GS
= 0 V, I
D
= 2 mA)
V
(BR)DSS
60 65 70 V
Zero Gate Voltage Drain Current
(V
DS
= 52 V, V
GS
= 0 V)
I
DSS
− 22 100
mA
Gate Input Current
(V
GS
= 5.0 V, V
DS
= 0 V)
I
GSS
− 30 100
mA
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 150 mA)
Threshold Temperature Coefficient
V
GS(th)
1.2
−
1.66
4.0
2.0
−
V
−mV/°C
Static Drain−to−Source On−Resistance (Note 3)
(V
GS
= 10 V, I
D
= 2.0 A, T
J
@ 25°C)
R
DS(on)
− 185 210
mW
Static Drain−to−Source On−Resistance (Note 3)
(V
GS
= 5.0 V, I
D
= 2.0 A, T
J
@ 25°C)
(V
GS
= 5.0 V, I
D
= 2.0 A, T
J
@ 150°C)
R
DS(on)
−
−
210
445
240
520
mW
Source−Drain Forward On Voltage
(I
S
= 7.0 A, V
GS
= 0 V)
V
SD
− 0.9 1.1
V
SWITCHING CHARACTERISTICS (Note 6)
Turn−on Delay Time
R
L
= 6.6 W, V
in
= 0 to 10 V,
V
DD
= 13.8 V, I
D
= 2.0 A, 10% V
in
to 10% I
D
td
(on)
− 127 − ns
Turn−on Rise Time
R
L
= 6.6 W, V
in
= 0 to 10 V,
V
DD
= 13.8 V, I
D
= 2.0 A, 10% I
D
to 90% I
D
t
rise
− 486 − ns
Turn−off Delay Time
R
L
= 6.6 W, V
in
= 0 to 10 V,
V
DD
= 13.8 V, I
D
= 2.0 A, 90% V
in
to 90% I
D
td
(off)
− 1600 − ns
Turn−off Fall Time
R
L
= 6.6 W, V
in
= 0 to 10 V,
V
DD
= 13.8 V, I
D
= 2.0 A, 90% I
D
to 10% I
D
t
fall
− 692 − ns
Slew Rate ON
R
L
= 6.6 W, V
in
= 0 to 10 V,
V
DD
= 13.8 V, I
D
= 2.0 A, 70% to 50% V
DD
dV
DS
/dT
on
− 79 −
V/ms
Slew Rate OFF
R
L
= 6.6 W, V
in
= 0 to 10 V,
V
DD
= 13.8 V, I
D
= 2.0 A, 50% to 70% V
DD
dV
DS
/dT
off
− 27 −
V/ms
SELF PROTECTION CHARACTERISTICS (Note 4)
Current Limit V
DS
= 10 V, V
GS
= 5.0 V, T
J
= 25°C (Note 5)
V
DS
= 10 V, V
GS
= 5.0 V, T
J
= 150°C (Notes 5, 6)
V
DS
= 10 V, V
GS
= 10 V, T
J
= 25°C (Notes 5)
I
LIM
5.0
3.5
6.5
7.0
4.5
8.5
9.5
6.0
10.5
A
Temperature Limit (Turn−off) V
GS
= 5.0 V (Note 6) T
LIM(off)
150 180 200 °C
Thermal Hysteresis V
GS
= 5.0 V
DT
LIM(on)
− 10 − °C
Temperature Limit (Turn−off) V
GS
= 10 V (Note 6) T
LIM(off)
150 180 200 °C
Thermal Hysteresis V
GS
= 10 V
DT
LIM(on)
− 20 − °C
Input Current during
Thermal Fault
V
DS
= 0 V, V
GS
= 5.0 V, T
J
= T
J
> T
(fault)
(Note 6)
V
DS
= 0 V, V
GS
= 10 V, T
J
= T
J
> T
(fault)
(Note 6)
I
g(fault)
−
−
5.9
12.3
− mA
ESD ELECTRICAL CHARACTERISTICS
Electro−Static Discharge Capability
Human Body Model (HBM)
Machine Model (MM)
ESD
6000
500
−
−
−
−
V
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Fault conditions are viewed as beyond the normal operating range of the part.
5. Current limit measured at 380 ms after gate pulse.
6. Not subject to production test.
P1-P3P4-P6P7-P9P10-P12

NCV8406ADTRKG

Mfr. #:
Buy NCV8406ADTRKG
Manufacturer:
ON Semiconductor
Description:
Gate Drivers 65V, SMARTFET
Lifecycle:
New from this manufacturer.
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