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NCV8406ADTRKG

P1-P3P4-P6P7-P9P10-P12
NCV8406, NCV8406A
www.onsemi.com
4
TYPICAL PERFORMANCE CURVES
Figure 2. Single Pulse Maximum Switch−off
Current vs. Load Inductance
Figure 3. Single−Pulse Maximum Switching
Energy vs. Load Inductance
L (mH) L (mH)
10010
1
10
10010
100
1000
Figure 4. Single Pulse Maximum Inductive
Switch−off Current vs. Time in Clamp
Figure 5. Single−Pulse Maximum Inductive
Switching Energy vs. Time in Clamp
TIME IN CLAMP (ms) TIME IN CLAMP (ms)
101
0.1
1
10
101
10
1000
ILmax (A)
Emax (mJ)
ILmax (A)
Emax (mJ)
T
Jstart
= 25°C
T
Jstart
= 150°C
T
Jstart
= 25°C
T
Jstart
= 150°C
T
Jstart
= 25°C
T
Jstart
= 150°C
T
Jstart
= 25°C
T
Jstart
= 150°C
10
100
3 V
150°C
V
DS
(V) V
GS
(V)
151050
0
2
6
10
12
543210
0
3
6
9
12
I
D
(A)
I
D
(A)
8
V
GS
= 2.5 V
3.3 V
4 V
5 V
6 V 7 V 8 V 9 V
10 V
−40°C
25°C
100°C
Figure 6. On−state Output Characteristics Figure 7. Transfer Characteristics
T
a
= 25°C
V
DS
= 10 V
4
NCV8406, NCV8406A
www.onsemi.com
5
TYPICAL PERFORMANCE CURVES
Figure 8. R
DS(on)
vs. Gate−Source Voltage Figure 9. R
DS(on)
vs. Drain Current
V
GS
(V) I
D
(A)
R
DS(on)
(m
W
)
R
DS(on)
(mW)
−40°C
25°C
100°C
150°C
−40°C, V
GS
= 5 V
−40°C, V
GS
= 10 V
25°C, V
GS
= 5 V
25°C, V
GS
= 10 V
100°C, V
GS
= 5 V
100°C, V
GS
= 10 V
150°C, V
GS
= 5 V
Figure 10. Normalized R
DS(on)
vs. Temperature Figure 11. Current Limit vs. Gate−Source
Voltage
T (°C) V
GS
(V)
1201008040200−20−40
0.5
1.0
1.5
2.0
2.5
NORMALIZED R
DS(on)
I
LIM
(A)
60
−40°C
25°C
100°C
140
V
GS
= 5 V
V
GS
= 10 V
100
200
300
400
500
600
345678910
50
100
200
300
350
400
450
500
0.5 1 1.5 2 2.75
150°C, V
GS
= 10 V
3
5
7
11
15
456 8 91
0
150°C
0.75 1.25 1.75 2.25
3
150
I
D
= 2 A
V
DS
= 10 V
150
250
350
450
550
ID = 2 A
ID = 0.5 A
250
2.5
7
9
13
Figure 12. Current Limit vs. Junction
Temperature
Figure 13. Drain−to−Source Leakage Current
T
J
(°C) V
DS
(V)
70605040302010
0.0001
0.01
0.1
1
10
100
1000
I
LIM
(A)
I
DSS
(mA)
−40°C
25°C
100°C
150°C
5
7
9
11
15
−40 −20 0 20 40 60 80 100 120 140
V
GS
= 5 V
V
GS
= 10 V
V
DS
= 10 V
V
GS
= 0 V
0.001
13
NCV8406, NCV8406A
www.onsemi.com
6
TYPICAL PERFORMANCE CURVES
Figure 14. Normalized Threshold Voltage vs.
Temperature
Figure 15. Source−Drain Diode Forward
Characteristics
T (°C) I
S
(A)
1401006040200−20−40
0.6
0.7
0.8
0.9
1.0
1.1
1.2
87654321
500
600
700
800
1000
1100
NORMALIZED V
GS(th)
(V)
V
SD
(mV)
80 120 9 10
−40°C
25°C
100°C
150°C
Figure 16. Resistive Load Switching Time vs.
Gate−Source Voltage
V
GS
(V)
109876543
0
200
600
1000
1600
TIME (ns)
t
d(off)
t
d(on)
t
f
t
r
I
D
= 150 mA
V
DS
= V
GS
1200
V
GS
= 0 V
V
DD
= 13.8 V
I
D
= 2 A
R
G
= 0 W
900
400
800
1400
Figure 17. Resistive Load Switching Time vs.
Gate Resistance
R
G
(W)
2000150010005000
−200
200
1400
3000
3400
TIME (ns)
t
d(on)
, V
GS
= 5 V
t
d(off)
, V
GS
= 5 V
t
r
, V
GS
= 5 V
t
f
, V
GS
= 5 V
t
d(on)
, V
GS
= 10 V
t
d(off)
, V
GS
= 10 V
t
r
, V
GS
= 10 V
t
f
, V
GS
= 10 V
2600
2200
1800
1000
600
Figure 18. Drain−Source Voltage Slope during
Turn On and Turn Off vs. Gate Resistance
R
G
(W)
2000150010005000
5
10
15
25
35
DRAIN−SOURCE VOLTAGE SLOPE (V/ms)
20
30
dV
DS
/d
t(off)
, V
GS
= 5 V
dV
DS
/d
t(off)
, V
GS
= 10 V
P1-P3P4-P6P7-P9P10-P12

NCV8406ADTRKG

Mfr. #:
Buy NCV8406ADTRKG
Manufacturer:
ON Semiconductor
Description:
Gate Drivers 65V, SMARTFET
Lifecycle:
New from this manufacturer.
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