PMBTA42DS,125

Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
1. Product profile
1.1 General description
NPN/NPN high-voltage double transistors in a small SOT457 (SC-74) Surface Mounted
Device (SMD) plastic package.
1.2 Features
n High breakdown voltage
n Two electrically isolated transistors
n Small SMD plastic package
1.3 Applications
n Automotive:
u High- and low-side switches
u Voltage regulators
n Communication: Telecom line interface
n Consumer: CRT TV
n Computing: Monitors
1.4 Quick reference data
PMBTA42DS
NPN/NPN high-voltage double transistors
Rev. 02 — 27 August 2009 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
V
CEO
collector-emitter voltage open base - - 300 V
I
C
collector current - - 100 mA
I
CM
peak collector current single pulse;
t
p
1ms
- - 200 mA
PMBTA42DS_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 27 August 2009 2 of 10
NXP Semiconductors
PMBTA42DS
NPN/NPN high-voltage double transistors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Symbol
1 emitter TR1
2 base TR2
3 collector TR2
4 emitter TR2
5 base TR1
6 collector TR1
132
4
56
006aaa677
132
TR1
456
TR2
Table 3. Ordering information
Type number Package
Name Description Version
PMBTA42DS SC-74 plastic surface mounted package (TSOP6); 6 leads SOT457
Table 4. Marking codes
Type number Marking code
PMBTA42DS P4
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
CBO
collector-base voltage open emitter - 300 V
V
CEO
collector-emitter voltage open base - 300 V
V
EBO
emitter-base voltage open collector - 6 V
I
C
collector current - 100 mA
I
CM
peak collector current single pulse;
t
p
1ms
- 200 mA
I
BM
peak base current single pulse;
t
p
1ms
- 100 mA
P
tot
total power dissipation T
amb
25 °C
[1]
- 290 mW
[2]
- 370 mW
[3]
- 450 mW

PMBTA42DS,125

Mfr. #:
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT Trans GP BJT NPN 300V 0.1A 6-Pin
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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