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PMBTA42DS,125

P1-P3P4-P6P7-P9P10-P11
PMBTA42DS_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 27 August 2009 3 of 10
NXP Semiconductors
PMBTA42DS
NPN/NPN high-voltage double transistors
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm
2
.
[3] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm
2
.
[3] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Per device
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 420 mW
[2]
- 560 mW
[3]
- 700 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
Table 5. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 431 K/W
[2]
- - 338 K/W
[3]
- - 278 K/W
R
th(j-sp)
thermal resistance from
junction to solder point
- - 105 K/W
Per device
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 298 K/W
[2]
- - 223 K/W
[3]
- - 179 K/W
PMBTA42DS_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 27 August 2009 4 of 10
NXP Semiconductors
PMBTA42DS
NPN/NPN high-voltage double transistors
7. Characteristics
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
I
CBO
collector-base
cut-off current
V
CB
= 200 V; I
E
= 0 A - - 100 nA
I
EBO
emitter-base
cut-off current
V
EB
=6V; I
C
= 0 A - - 100 nA
h
FE
DC current gain V
CE
=10V; I
C
= 1 mA 25 - -
V
CE
=10V; I
C
=10mA 40 - -
V
CE
=10V; I
C
=30mA 40 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= 20 mA; I
B
= 2 mA - - 500 mV
V
BEsat
base-emitter
saturation voltage
I
C
= 20 mA; I
B
= 2 mA - - 900 mV
C
re
feedback
capacitance
V
CB
=20V; I
C
=i
c
=0A;
f = 1 MHz
--3pF
f
T
transition
frequency
V
CE
=20V; I
C
= 10 mA;
f = 100 MHz
50 - - MHz
T
amb
=25°CV
CE
=10V
(1) T
amb
= 150 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
Fig 1. Collector current as a function of
collector-emitter voltage; typical values
Fig 2. DC current gain as a function of collector
current; typical values
V
CE
(V)
0108462
006aaa688
100
50
150
200
I
C
(mA)
0
I
B
(mA) = 30
27
24
21
18
15
12
9
6
3
mld391
100
200
300
h
FE
0
I
C
(mA)
10
−1
10
2
101
(1)
(2)
(3)
PMBTA42DS_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 27 August 2009 5 of 10
NXP Semiconductors
PMBTA42DS
NPN/NPN high-voltage double transistors
V
CE
=10V
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 150 °C
I
C
/I
B
=10
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 150 °C
Fig 3. Base-emitter voltage as a function of collector
current; typical values
Fig 4. Base-emitter saturation voltage as a function
of collector current, typical values
I
C
/I
B
=10
(1) T
amb
= 150 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
Fig 5. Collector-emitter saturation voltage as a function of collector current; typical values
I
C
(mA)
10
−1
10
2
101
mld393
400
600
200
800
1000
V
BE
(mV)
0
(1)
(2)
(3)
mld394
600
400
800
1000
V
BEsat
(mV)
200
I
C
(mA)
10
−1
10
2
101
(1)
(2)
(3)
mld395
I
C
(mA)
10
−1
10
2
101
10
2
10
3
V
CEsat
(mV)
10
(1)
(2)
(3)
P1-P3P4-P6P7-P9P10-P11

PMBTA42DS,125

Mfr. #:
Buy PMBTA42DS,125
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT Trans GP BJT NPN 300V 0.1A 6-Pin
Lifecycle:
New from this manufacturer.
Delivery:
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