OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IS62C256AL-25ULI-TR

P1-P3P4-P6P7-P9P10-P12
Integrated Silicon Solution, Inc. — www.issi.com 1
Rev. E
07/20/2015
Copyright © 2015 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause
failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written
assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
IS65C256AL
IS62C256AL
FEATURES
• Accesstime:25ns,45ns
• Lowactivepower:200mW(typical)
• Lowstandbypower
—150µW(typical)CMOSstandby
—15mW(typical)operating
• Fullystaticoperation:noclockorrefresh
required
• TTLcompatibleinputsandoutputs
• Single5Vpowersupply
• Lead-freeavailable
• IndustrialandAutomotivetemperaturesavailable
DESCRIPTION
TheISSIIS62C256AL/IS65C256ALisalowpower,32,768
word by 8-bit CMOS static RAM. It is fabricated using
ISSI'shigh-performance,lowpowerCMOStechnology.
When CE is HIGH (deselected), the device assumes
a standby mode at which the power dissipation can be
reduceddownto150µW(typical)atCMOSinputlevels.
Easy memory expansion is provided by using an active
LOWChipSelect(CE)inputandanactiveLOWOutput
Enable(OE)input.TheactiveLOWWrite Enable (WE)
controls both writing and reading of the memory.
TheIS62C256AL/IS65C256ALispincompatiblewithother
32Kx8SRAMsinplasticSOPorTSOP(TypeI)package.
FUNCTIONAL BLOCK DIAGRAM
A0-A14
CE
OE
WE
32K X 8
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VDD
I/O
DATA
CIRCUIT
I/O0-I/O7
32K x 8 LOW POWER CMOS STATIC RAM
JULY 2015
2 Integrated Silicon Solution, Inc.
Rev. E
07/20/2015
IS65C256AL
IS62C256AL
PIN CONFIGURATION
28-Pin SOP
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VDD
WE
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
Vterm TerminalVoltagewithRespecttoGND –0.5to+7.0 V
tstg StorageTemperature –65to+150 °C
Pt PowerDissipation 0.5W
Iout DCOutputCurrent(LOW) 20 mA
Note:
1.StressgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycauseperma-
nentdamagetothedevice.Thisisastressratingonlyandfunctionaloperationofthedevice
at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
22
23
24
25
26
27
28
1
2
3
4
5
6
7
21
20
19
18
17
16
15
14
13
12
11
10
9
8
OE
A11
A9
A8
A13
WE
VDD
A14
A12
A7
A6
A5
A4
A3
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
PIN CONFIGURATION
28-Pin TSOP
PIN DESCRIPTIONS
A0-A14 AddressInputs
CE Chip Select Input
OE OutputEnableInput
WE WriteEnableInput
I/O0-I/O7Input/Output
Vdd Power
GND Ground
TRUTH TABLE
Mode WE CE OE I/O Operation VDD Current
NotSelected X H X High-Z Isb1, Isb2
(Power-down)
OutputDisabled H L H High-Z Icc1, Icc2
Read H L L dout Icc1, Icc2
Write L L X dIn Icc1, Icc2
Integrated Silicon Solution, Inc.3
Rev. E
07/20/2015
IS65C256AL
IS62C256AL
OPERATING RANGE
Part No. Range Ambient Temperature VDD
IS62C256AL Commercial 0°Cto+70°C 5V±10%
IS62C256AL Industrial –40°Cto+85°C 5V±10%
IS65C256AL Automotive –40°Cto+125°C 5V±10%
DC ELECTRICAL CHARACTERISTICS
Symbol Parameter Test Conditions Min. Max. Unit
Voh OutputHIGHVoltage Vdd = Min.,Ioh = –1.0mA 2.4 — V
Vol OutputLOWVoltage Vdd = Min.,Iol = 2.1mA — 0.4 V
VIh InputHIGHVoltage 2.2 Vdd + 0.5 V
VIl InputLOWVoltage
(1)
–0.3 0.8 V
IlI InputLeakage GND≤
VIn ≤
Vdd
Com. –1 1 µA
Ind. –2 2
Auto. –10 10
Ilo OutputLeakage
GND≤
Vout ≤
Vdd, Com. –1 1 µA
OutputsDisabled Ind. –2 2
Auto. –10 10
Note: 1. VIl = –3.0V for pulse width less than 10 ns.
P1-P3P4-P6P7-P9P10-P12

IS62C256AL-25ULI-TR

Mfr. #:
Buy IS62C256AL-25ULI-TR
Manufacturer:
ISSI
Description:
SRAM 256K (32K x 8) 25ns Async SRAM 5v
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet