PTFA092211EL
PTFA092211FL
Confidential, Limited Internal Distribution
Data Sheet 1 of 10 Rev. 02, 2009-05-27
All published data at T
CASE
= 25 °C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Description
The PTFA092211EL and PTFA092211FL are 220-watt, internally-
matched LDMOS FETs intended for EDGE and WCDMA applications
in the 920 to 960 MHz band. Manufactured with Infineon's advanced
LDMOS process, these devices provide excellent thermal
performance and superior reliability.
PTFA092211EL
Package H-33288-2
Thermally-Enhanced High Power RF LDMOS FETs
220 W, 920 – 960 MHz
Two-carrier WCDMA Performance
V
DD
= 30 V, I
DQ
= 1.50 A, ƒ = 940 MHz, 3GPP WCDMA
signal, PAR = 6.5 dB, 5 MHz carrier spacing
10
15
20
25
30
35
40
40 41 42 43 44 45 46 47 48 49
Output Power, Avg. (dBm)
Drain Efficiency (%)
-50
-45
-40
-35
-30
-25
-20
ACPR (dBc)
Efficiency
RF Characteristics
PTFA092211FL
Package H-34288-2
Features
• Broadband internal matching
• Typical two-carrier WCDMA performance at
940 MHz, 30 V
- Average output power = 50 W
- Linear Gain = 18.0 dB
- Efficiency = 30%
- Intermodulation distortion = –37 dBc
• Typical CW performance, 940 MHz, 30 V
- Output power at P–1dB = 250 W
- Gain = 17.0 dB
- Efficiency = 59%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 30 V,
220 W (CW) output power
• Pb-free, RoHS-compliant and thermally-enhanced
packages
*See Infineon distributor for future availability.
Two-carrier WCDMA Measurements (tested in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 1750 mA, P
OUT
= 50 W (AVG),
ƒ
1
= 937.5 MHz, ƒ
2
= 942.5 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 7.5 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain G
ps
17.0 18.0 — dB
Drain Efficiency η
D
28.5 30 — %
Intermodulation Distortion IMD — –34 –32 dBc
