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PTFA092211ELV4XWSA1

P1-P3P4-P6P7-P9P10-P10
PTFA092211EL
PTFA092211FL
Confidential, Limited Internal Distribution
Data Sheet 4 of 10 Rev. 02, 2009-05-27
Six-carrier GSM Performance
V
DD
= 30 V, I
DQ
= 1.6 A, ƒ = 940 MHz,
P/AR = 7 dB
0
10
20
30
40
50
60
37 39 41 43 45 47 49
Output Power (dBm)
Drain Efficiency (%)
-50
-45
-40
-35
-30
-25
-20
IMD (dBc) , ACPR (dBc)
Efficiency
IMD Low
Gain
IMD Up
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20 0 20 40 60 80 100
Case Temperature (°C)
Normalized Bias Voltage (V)
2.33 A
4.65 A
9.33 A
11.64 A
13.98 A
Intermodulation Distortion vs. Output Power
V
DD
= 30 V, I
DQ
= 1.75 A, ƒ
1
= 939 MHz, ƒ
2
= 940 MHz
-80
-70
-60
-50
-40
-30
-20
40 44 48 52 56
Output Power, PEP (dBm)
IMD (dBc)
5th
7th
3rd Order
Typical Performance (cont.)
Data Sheet 5 of 10 Rev. 02, 2009-05-27
PTFA092211EL
PTFA092211FL
Confidential, Limited Internal Distribution
0.1
0.3
0.5
0.2
0.4
0
.
1
0
.
1
-
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
G
E
N
E
R
A
O
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
-
0
.
0
Z Load
Z Source
900 MHz
980 MHz
Broadband Circuit Impedance
Z Source Z Load
G
S
D
Frequency Z Source Ω Z Load Ω
MHz R jX R jX
900 1.530 -0.650 1.480 -0.110
920 1.520 -0.380 1.430 0.180
940 1.520 -0.140 1.390 0.470
960 1.520 0.090 1.360 0.750
980 1.540 0.330 1.360 1.020
Z
0
= 50 Ω
Data Sheet 6 of 10 Rev. 02, 2009-05-27
PTFA092211EL
PTFA092211FL
Confidential, Limited Internal Distribution
Reference Circuit
Reference circuit block diagram for ƒ = 960 MHz
Circuit Assembly Information
DUT PTFA092211EL or PTFA092211FL LDMOS Transistor
PCB 0.76 mm [.030"] thick, ε
r
= 3.48 Rogers RO4350 1 oz. copper
Microstrip Electrical Characteristics at 960 MHz
1
Dimensions: L x W (mm) Dimensions: L x W (in.)
l1 0.068 λ, 52.0 W 12.78 x 1.60 0.503 x 0.063
l2 0.041 λ, 38.0 Ω 7.57 x 2.54 0.298 x 0.100
l3 0.040 λ, 38.0 Ω 7.34 x 2.54 0.289 x 0.100
l4 0.056 λ, 7.8 Ω 9.65 x 17.83 0.380 x 0.702
l5 0.061 λ, 7.8 Ω 10.59 x 17.83 0.417 x 0.702
l6 0.208 λ, 78.3 Ω 40.64 x 0.74 1.600 x 0.029
l7, l8 0.200 λ, 60.1 Ω 38.10 x 1.24 1.500 x 0.049
l9 0.102 λ, 8.4 Ω 17.65 x 16.48 0.695 x 0.649
l10 (taper) 0.044 λ, 8.4 Ω / 12.0 Ω 7.82 x 16.48 / 11.0 0.308 x 0.649 / 0.433
l11 (taper) 0.065 λ, 12.0 Ω / 37.7 Ω 11.43 x 11.00 / 2.64 0.450 x 0.433 / 0.104
l12 0.022 λ, 37.0 Ω 4.04 x 2.64 0.159 x 0.104
l13 0.035 λ, 52.0 Ω 6.55 x 1.60 0.258 x 0.063
1
Electrical characteristics are rounded.
RF_IN
RF_OUT
a092211 efl- v4_cd _5 - 6- 09
Q1
QQ1
C1
C3
C2
R1
R2
C7
R7R6
C5
C6
R4
R5
R8
C9
C8
C10
C17
C11
C13
C12
C14
C16
C21
C20
C19
C18
R3
C22
C15
L2
C25
C23
C24
L1
C4
100
HFK
7JN
100
HFK
7JN
C6
P1-P3P4-P6P7-P9P10-P10

PTFA092211ELV4XWSA1

Mfr. #:
Buy PTFA092211ELV4XWSA1
Manufacturer:
Infineon Technologies
Description:
FET RF LDMOS 220W H33288-2
Lifecycle:
New from this manufacturer.
Delivery:
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