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BAS116H,115

P1-P3P4-P6P7-P9P10-P11
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
1. Product profile
1.1 General description
Low leakage switching diode, encapsulated in a SOD123F small and flat lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
Small and flat lead SMD plastic package
Low leakage current
Excellent coplanarity and improved thermal behavior
AEC-Q101 qualified
1.3 Applications
General-purpose switching
1.4 Quick reference data
[1] Pulse test: t
p
300 s; 0.02.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] When switched from I
F
= 10 mA to I
R
=10mA; R
L
= 100 ; measured at I
R
=1mA.
2. Pinning information
[1] The marking bar indicates the cathode.
BAS116H
Low leakage switching diode
Rev. 3 — 31 May 2011 Product data sheet
SOD123F
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
I
F
forward current
[1][2]
--215mA
I
R
reverse current V
R
= 75 V - 0.003 5.0 nA
V
R
reverse voltage - - 75 V
t
rr
reverse recovery time
[3]
-0.83.0s
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 cathode
[1]
2 anode
21
sym001
12
BAS116H All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 31 May 2011 2 of 10
NXP Semiconductors
BAS116H
Low leakage switching diode
3. Ordering information
4. Marking
5. Limiting values
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Pulse test: t
p
300 s; 0.02.
[3] T
j
=25C prior to surge.
[4] Reflow soldering is the only recommended soldering method.
[5] Soldering point of cathode tab.
Table 3. Ordering information
Type number Package
Name Description Version
BAS116H - plastic surface-mounted package; 2 leads SOD123F
Table 4. Marking codes
Type number Marking code
BAS116H B1
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
RRM
repetitive peak reverse
voltage
-85V
V
R
reverse voltage - 75 V
I
F
forward current
[1][2]
-215mA
I
FRM
repetitive peak forward
current
-500mA
I
FSM
non-repetitive peak forward
current
square wave
[3]
t
p
=1s-4A
t
p
=1ms - 1 A
t
p
=1s - 0.5 A
P
tot
total power dissipation T
amb
25 C
[1][4]
[5]
-375mW
T
j
junction temperature - 150 C
T
amb
ambient temperature 65 +150 C
T
stg
storage temperature 65 +150 C
P1-P3P4-P6P7-P9P10-P11

BAS116H,115

Mfr. #:
Buy BAS116H,115
Manufacturer:
Nexperia
Description:
Diodes - General Purpose, Power, Switching DIODE LOW LEAKAGE
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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