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BAS116H,115

P1-P3P4-P6P7-P9P10-P11
BAS116H All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 31 May 2011 3 of 10
NXP Semiconductors
BAS116H
Low leakage switching diode
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Soldering point of cathode tab.
7. Characteristics
[1] Pulse test: t
p
300 s; 0.02.
[2] When switched from I
F
= 10 mA to I
R
=10mA; R
L
= 100 ; measured at I
R
=1mA.
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1][2]
--330K/W
R
th(j-sp)
thermal resistance from
junction to solder point
[3]
--70K/W
Table 7. Characteristics
T
amb
=25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage
[1]
I
F
= 1 mA - - 0.90 V
I
F
=10mA - - 1.00 V
I
F
=50mA - - 1.10 V
I
F
= 150 mA - - 1.25 V
I
R
reverse current V
R
= 75 V - 0.003 5.0 nA
V
R
=75V; T
j
= 150 C- 3 80.0nA
C
d
diode capacitance V
R
=0V; f=1MHz -2-pF
t
rr
reverse recovery time
[2]
-0.83.0s
BAS116H All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 31 May 2011 4 of 10
NXP Semiconductors
BAS116H
Low leakage switching diode
(1) T
amb
= 150 C; typical values
(2) T
amb
=25C; typical values
(3) T
amb
=25C; maximum values
Based on square wave currents
T
j
=25C; prior to surge
Fig 1. Forward current as a function of forward
voltage
Fig 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
V
R
=75V
(1) Maximum values
(2) Typical values
T
amb
=25C; f = 1 MHz
Fig 3. Reverse current as a function of junction
temperature
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
BAS116H All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 31 May 2011 5 of 10
NXP Semiconductors
BAS116H
Low leakage switching diode
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
(1) I
R
=1mA
Fig 5. Reverse recovery time test circuit and waveforms
t
rr
(1)
+ I
F
t
output signal
t
r
t
p
t
10 %
90 %
V
R
input signal
V = V
R
+
I
F
×
R
S
R
S
= 50
Ω
I
F
D.U.T.
R
i
= 50
Ω
SAMPLING
OSCILLOSCOPE
mga881
Fig 6. Package outline SOD123F
04-11-29Dimensions in mm
1.2
1.0
0.25
0.10
3.6
3.4
2.7
2.5
0.55
0.35
0.70
0.55
1.7
1.5
1
2
Table 8. Packing methods
The -xxx numbers are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 10000
BAS116H SOD123F 4 mm pitch, 8 mm tape and reel -115 -135
P1-P3P4-P6P7-P9P10-P11

BAS116H,115

Mfr. #:
Buy BAS116H,115
Manufacturer:
Nexperia
Description:
Diodes - General Purpose, Power, Switching DIODE LOW LEAKAGE
Lifecycle:
New from this manufacturer.
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