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74LV245N,112

P1-P3P4-P6P7-P9P10-P12P13-P15
74LV245_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 15 April 2009 4 of 15
NXP Semiconductors
74LV245
Octal bus transceiver; 3-state
7. Limiting values
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For DIP20 packages: above 70 °C the value of P
tot
derates linearly with 12 mW/K.
For SO20 packages: above 70 °C the value of P
tot
derates linearly with 8 mW/K.
For (T)SSOP20 packages: above 60 °C the value of P
tot
derates linearly with 5.5 mW/K.
8. Recommended operating conditions
[1] The static characteristics are guaranteed from V
CC
= 1.2 V to V
CC
= 5.5 V, but LV devices are guaranteed to function down to
V
CC
= 1.0 V (with input levels GND or V
CC
).
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage −0.5 +7.0 V
I
IK
input clamping current V
I
< −0.5 V or V
I
>V
CC
+ 0.5 V
[1]
- ±20 mA
I
OK
output clamping current V
O
< −0.5 V or V
O
>V
CC
+ 0.5 V
[1]
- ±50 mA
I
O
output current V
O
= −0.5 V to (V
CC
+ 0.5 V) - ±35 mA
I
CC
supply current - 70 mA
I
GND
ground current −70 - mA
T
stg
storage temperature −65 +150 °C
P
tot
total power dissipation T
amb
= −40 °C to +125 °C
[2]
DIP20 - 750 mW
SO20, SSOP20, TSSOP20 - 500 mW
Table 5. Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage
[1]
1.0 3.3 5.5 V
V
I
input voltage 0 - V
CC
V
V
O
output voltage 0 - V
CC
V
T
amb
ambient temperature −40 +25 +125 °C
∆t/∆V input transition rise and fall rate V
CC
= 1.0 V to 2.0 V - - 500 ns/V
V
CC
= 2.0 V to 2.7 V - - 200 ns/V
V
CC
= 2.7 V to 3.6 V - - 100 ns/V
V
CC
= 3.6 V to 5.5 V - - 50 ns/V
74LV245_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 15 April 2009 5 of 15
NXP Semiconductors
74LV245
Octal bus transceiver; 3-state
9. Static characteristics
[1] Typical values are measured at T
amb
= 25 °C.
Table 6. Static characteristics
At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions −40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ
[1]
Max Min Max
V
IH
HIGH-level input voltage V
CC
= 1.2 V 0.9 - - 0.9 - V
V
CC
= 2.0 V 1.4 - - 1.4 - V
V
CC
= 2.7 V to 3.6 V 2.0 - - 2.0 - V
V
CC
= 4.5 V to 5.5 V 0.7V
CC
- - 0.7V
CC
-V
V
IL
LOW-level input voltage V
CC
= 1.2 V - - 0.3 - 0.3 V
V
CC
= 2.0 V - - 0.6 - 0.6 V
V
CC
= 2.7 V to 3.6 V - - 0.8 - 0.8 V
V
CC
= 4.5 V to 5.5 V - - 0.3V
CC
- 0.3V
CC
V
V
OH
HIGH-level output voltage V
I
= V
IH
or V
IL
I
O
= −100 µA; V
CC
= 1.2 V - 1.2 - - - V
I
O
= −100 µA; V
CC
= 2.0 V 1.8 2.0 - 1.8 - V
I
O
= −100 µA; V
CC
= 2.7 V 2.5 2.7 - 2.5 - V
I
O
= −100 µA; V
CC
= 3.0 V 2.8 3.0 - 2.8 - V
I
O
= −100 µA; V
CC
= 4.5 V 4.3 4.5 - 4.3 - V
I
O
= −8 mA; V
CC
= 3.0 V 2.4 2.82 - 2.2 - V
I
O
= −16 mA; V
CC
= 4.5 V 3.6 4.2 - 3.5 - V
V
OL
LOW-level output voltage V
I
= V
IH
or V
IL
I
O
= 100 µA; V
CC
= 1.2 V - 0 - - - V
I
O
= 100 µA; V
CC
= 2.0 V - 0 0.2 - 0.2 V
I
O
= 100 µA; V
CC
= 2.7 V - 0 0.2 - 0.2 V
I
O
= 100 µA; V
CC
= 3.0 V - 0 0.2 - 0.2 V
I
O
= 100 µA; V
CC
= 4.5 V - 0 0.2 - 0.2 V
I
O
= 8 mA; V
CC
= 3.0 V - 0.25 0.40 - 0.50 V
I
O
= 16 mA; V
CC
= 4.5 V - 0.35 0.55 - 0.65 V
I
I
input leakage current V
I
=V
CC
or GND;
V
CC
= 5.5 V
- - 1.0 - 1.0 µA
I
OZ
OFF-state output current V
I
=V
IH
or V
IL
;
V
O
=V
CC
or GND;
V
CC
= 5.5 V
--5 - 10µA
I
CC
supply current V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 5.5 V
- - 20 - 160 µA
∆I
CC
additional supply current per input; V
I
= V
CC
− 0.6 V;
V
CC
= 2.7 V to 3.6 V
- - 500 - 850 µA
C
I
input capacitance - 3.5 - - - pF
C
I/O
input/output capacitance - 10 - - - pF
74LV245_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 15 April 2009 6 of 15
NXP Semiconductors
74LV245
Octal bus transceiver; 3-state
10. Dynamic characteristics
[1] All typical values are measured at T
amb
=25°C.
[2] t
pd
is the same as t
PLH
and t
PHL
.
t
en
is the same as t
PZL
and t
PZH
.
t
dis
is the same as t
PLZ
and t
PHZ
.
[3] Typical values are measured at nominal supply voltage (V
CC
= 3.3 V and V
CC
= 5.0 V).
[4] C
PD
is used to determine the dynamic power dissipation (P
D
in µW).
P
D
=C
PD
× V
CC
2
× f
i
× N+Σ(C
L
× V
CC
2
× f
o
) where:
f
i
= input frequency in MHz, f
o
= output frequency in MHz
C
L
= output load capacitance in pF
V
CC
= supply voltage in Volts
N = number of inputs switching
Σ(C
L
× V
CC
2
× f
o
) = sum of the outputs.
Table 7. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 7.
Symbol Parameter Conditions −40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ
[1]
Max Min Max
t
pd
propagation delay An, Bn to Bn, An; see Figure 5
[2]
V
CC
= 1.2 V - 45 28 - - ns
V
CC
= 2.0 V - 15 28 - 34 ns
V
CC
= 2.7 V - 11 19 - 24 ns
V
CC
= 3.0 V to 3.6 V; C
L
=15pF
[3]
-7- - -ns
V
CC
= 3.0 V to 3.6 V
[3]
- 9 16 - 20 ns
V
CC
= 4.5 V to 5.5 V
[3]
- 8 11 - 14 ns
t
en
enable time OE to An, Bn; see Figure 6
[2]
V
CC
= 1.2 V - 55 - - - ns
V
CC
= 2.0 V - 19 31 - 39 ns
V
CC
= 2.7 V - 14 23 - 29 ns
V
CC
= 3.0 V to 3.6 V
[3]
- 10 18 - 23 ns
V
CC
= 4.5 V to 5.5 V
[3]
- 8.5 14 - 18 ns
t
dis
disable time OE to An, Bn; see Figure 6
[2]
V
CC
= 1.2 V - 65 - - - ns
V
CC
= 2.0 V - 24 32 - 39 ns
V
CC
= 2.7 V - 18 24 - 29 ns
V
CC
= 3.0 V to 3.6 V
[3]
- 14 20 - 24 ns
V
CC
= 4.5 V to 5.5 V
[3]
- 11.5 16 - 19 ns
C
PD
power dissipation
capacitance
C
L
= 50 pF; f
i
= 1 MHz;
V
I
= GND to V
CC
; V
CC
= 3.3 V
[4]
-40- - -pF
P1-P3P4-P6P7-P9P10-P12P13-P15

74LV245N,112

Mfr. #:
Buy 74LV245N,112
Manufacturer:
NXP Semiconductors
Description:
Bus Transceivers 3.3V OCTAL BUS XCVR
Lifecycle:
New from this manufacturer.
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