IXYP15N65C3D1 Datasheet IXYP15N65C3D1 | P1-P3

V

CES

= 650V

I

C110

= 15A

V

CE(sat)







2.5V

t

fi(typ)

= 28ns

DS100575B(02/15)

Extreme Light Punch Through

IGBT for 20-60kHz Switching

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

BV

CES

I

C

= 250A, V

GE

= 0V 650 V

V

GE(th)

I

C

= 250A, V

CE

= V

GE

3.5 6.0 V

I

CES

V

CE

= V

CES

,

V

GE

= 0V 10 A

T

J

= 150C 400 A

I

GES

V

CE

= 0V, V

GE

= 20V 100 nA

V

CE(sat)

I

C

= 15A, V

GE

= 15V, Note 1 1.96 2.50 V

T

J

= 150C 2.45 V

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 175°C 650 V

V

CGR

T

J

= 25°C to 175°C, R

GE

= 1M 650 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C 38 A

I

C110

T

C

= 110°C 15 A

I

F110

T

C

= 110°C 23 A

I

CM

T

C

= 25°C, 1ms 80 A

I

A

T

C

= 25°C 5 A

E

AS

T

C

= 25°C 100 mJ

SSOA V

GE

= 15V, T

VJ

= 150°C, R

G

= 20 I

CM

= 30 A

(RBSOA) Clamped Inductive Load @V

CE

 V

CES

t

sc

V

GE

= 15V, V

CE

= 360V, T

J

= 150°C 8 μs

(SCSOA) R

G

= 82, Non Repetitive

P

C

T

C

= 25°C 200 W

T

J

-55 ... +175 °C

T

JM

175 °C

T

stg

-55 ... +175 °C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6 mm (0.062in.) from Case for 10s 260 °C

M

d

Mounting Torque (TO-220) 1.13/10 Nm/lb.in

F

C

Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb

Weight TO-263 2.5 g

TO-220 3.0 g

XPT

TM

650V IGBT

GenX3

TM

w/Diode

IXYA15N65C3D1

IXYP15N65C3D1

Features



Optimized for 20-60kHz Switching



Square RBSOA



Avalanche Rated



Anti-Parallel Fast Diode



Short Circuit Capability



International Standard Packages

Advantages



High Power Density



Extremely Rugged



Low Gate Drive Requirement

Applications



Power Inverters



UPS



Motor Drives



SMPS



PFC Circuits



Battery Chargers



Welding Machines



Lamp Ballasts



High Frequency Power Inverters

Preliminary Technical Information

G = Gate C = Collector

E = Emitter Tab = Collector

TO-263 AA (IXYA)

G

C

E

TO-220AB (IXYP)

G

E

C (Tab)

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYA15N65C3D1

IXYP15N65C3D1

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Notes:

1. Pulse test, t  300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V

CE

(clamp), T

J

or R

G

.

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fs

I

C

= 15A, V

CE

= 10V, Note 1 5.0 8.5 S

C

ie

s

583 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 52 pF

C

res

13 pF

Q

g(on)

19 nC

Q

ge

I

C

= 15A, V

GE

= 15V, V

CE

= 0.5 • V

CES

4 nC

Q

gc

10 nC

t

d(on)

15 ns

t

ri

20 ns

E

on

0.27 mJ

t

d(off)

68 ns

t

fi

28 ns

E

of

f

0.23 0.40 mJ

t

d(on)

15 ns

t

ri

21 ns

E

on

0.53 mJ

t

d(off)

80 ns

t

fi

42 ns

E

off

0.24 mJ

R

thJC

0.75 °C/W

R

thCS

TO-220 0.50 °C/W

Inductive load, T

J

= 25°C

I

C

= 15A, V

GE

= 15V

V

CE

= 400V, R

G

= 20

Note 2

Inductive load, T

J

= 150°C

I

C

= 15A, V

GE

= 15V

V

CE

= 400V, R

G

= 20

Note 2

Reverse Diode (FRED)

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

V

F

I

F

= 10A, V

GE

= 0V, Note 1 3.0 V

T

J

= 125C 1.7 V

I

RM

2.5 A

t

rr

110 ns

t

rr

30 ns

R

thJC

1.85 °C/W

I

F

= 12A, V

GE

= 0V,

-di

F

/dt = 100A/μs, V

R

= 100V, T

J

= 125°C

I

F

= 1A, V

GE

= 0V, -di

F

/dt = 100A/μs, V

R

= 30V

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.06 4.83 .160 .190

b 0.51 0.99 .020 .039

b2 1.14 1.40 .045 .055

c 0.40 0.74 .016 .029

c2 1.14 1.40 .045 .055

D 8.64 9.65 .340 .380

D1 8.00 8.89 .280 .320

E 9.65 10.41 .380 .405

E1 6.22 8.13 .270 .320

e 2.54 BSC .100 BSC

L 14.61 15.88 .575 .625

L1 2.29 2.79 .090 .110

L2 1.02 1.40 .040 .055

L3 1.27 1.78 .050 .070

L4 0 0.13 0 .005

TO-263 Outline

1. Gate

2. Collector

3. Emitter

4. Collector

Bottom Side

TO-220 Outline

Pins: 1 - Gate

2,4 - Collector

3 - Emitter

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

5

10

15

20

25

30

00.511.522.533.5

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

14V

13V

12V

10V

7V

9V

11V

8V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

10

20

30

40

50

60

70

0 5 10 15 20 25 30

V

CE

- Volts

I

C

-

Amperes

V

GE

= 15V

8V

9V

11V

13V

12V

14V

10V

Fig. 3. Output Characteristics @ T

J

= 150ºC

0

5

10

15

20

25

30

00.511.522.533.544.5

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

14V

13V

12V

10V

9V

11V

8V

7V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 15A

I

C

= 7.5A

I

C

= 30A

Fig. 5. Collector-to-Emitter Voltage vs.

Gate-to-Emitter Voltage

1

2

3

4

5

6

7

8

8 9 10 11 12 13 14 15

V

GE

- Volts

V

CE

- Volts

30A

T

J

= 25ºC

15A

I

C

= 7.5A

Fig. 6. Input Admittance

0

5

10

15

20

25

30

35

40

5678910111213

V

GE

- Volts

I

C

-

Amperes

T

J

= 150ºC

25ºC

- 40ºC

IXYA15N65C3D1

IXYP15N65C3D1

IXYP15N65C3D1

IXYP15N65C3D1

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