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IXYP15N65C3D1
P1-P3
P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYA15N65C3D1
IXYP15N65C3D1
Fi
g. 7
. Trans
conduc
tanc
e
0
1
2
3
4
5
6
7
8
9
10
11
0
5
10
15
20
25
30
35
I
C
-
Amper
es
g
f s
-
Siem
ens
T
J
= - 40
ºC
150º
C
25º
C
V
CE
= 10V
Fi
g. 10. Rev
erse-B
i
as Safe O
perati
ng Area
0
5
10
15
20
25
30
35
100
200
300
400
500
60
0
700
V
CE
- V
olts
I
C
-
Amperes
T
J
= 150º
C
R
G
= 20
Ω
dv
/ dt
< 10V /
n
s
Fi
g. 8. G
a
te C
harge
0
2
4
6
8
10
12
14
16
0
2
4
6
8
1
01
21
4
1
61
82
0
Q
G
- Nano
C
o
ulo
m
b
s
V
GE
- V
o
lts
V
CE
= 325V
I
C
= 15
A
I
G
= 10
mA
Fi
g. 9. C
apaci
tance
10
100
1,000
0
5
10
15
20
25
30
35
40
V
CE
- V
o
lt
s
Capaci
t
ance - Pi
coFar
ad
s
f
= 1 MH
z
C
ies
C
oes
C
res
Fi
g. 11. M
axi
mum Tran
si
ent Th
ermal
I
mpedance
0.
01
0.1
1
0.
00001
0.
0001
0.
001
0.
01
0.
1
1
Pu
lse W
idt
h -
Second
Z
(th)JC
- ºC
/ W
© 2015 IXYS CORPORATION, All Rights Reserved
Fi
g.
12. Inductive
Sw
i
tc
hi
n
g Energy Loss v
s.
Gat
e Resi
stance
0.
0
0.
2
0.
4
0.
6
0.
8
1.
0
20
30
40
50
60
70
80
90
100
R
G
- Ohm
s
E
of
f
- M
illiJ
o
u
le
s
0
1
2
3
4
5
E
on
- M
illiJ
o
u
le
s
E
off
E
on
- - - -
T
J
= 150º
C
, V
GE
= 15V
V
CE
= 4
0
0
V
I
C
= 15
A
I
C
= 30
A
Fi
g. 15. Induct
ive Turn-off S
w
it
c
hi
ng Ti
me
s v
s.
Gat
e Resi
stance
15
20
25
30
35
40
45
50
55
60
20
30
40
50
60
70
80
90
100
R
G
- Ohm
s
t
f i
- Nanoseconds
40
60
80
100
120
140
160
180
200
220
t
d(of
f)
-
Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 150º
C
, V
GE
= 15V
V
CE
= 4
0
0
V
I
C
= 15
A
I
C
= 30A
Fi
g. 13. I
nducti
v
e Sw
it
ching E
nergy
Los
s v
s.
Coll
e
cto
r Curre
nt
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
8
1
01
21
41
61
82
02
22
42
62
83
0
I
C
- Am
peres
E
off
- MilliJoule
s
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
E
on
- M
illiJ
o
u
le
s
E
off
E
on
- - - -
R
G
= 20
Ω
,
V
GE
= 15
V
V
CE
= 4
0
0
V
T
J
= 150º
C
T
J
= 25
ºC
Fi
g. 14. I
nducti
v
e Sw
i
tchi
ng Ener
gy Loss v
s.
Juncti
on Temperatur
e
0.0
0.2
0.4
0.6
0.8
1.0
25
50
75
100
125
150
T
J
-
Degrees Cen
t
igr
a
de
E
off
- M
illiJ
o
u
le
s
0.0
0.5
1.0
1.5
2.0
2.5
E
on
-
M
il
liJ
ou
le
s
E
off
E
on
- - - -
R
G
= 20
Ω
,
V
GE
= 15V
V
CE
= 400V
I
C
= 15A
I
C
= 30A
Fi
g. 16. I
nducti
v
e Turn-of
f Sw
i
tchi
ng Ti
mes v
s.
Coll
ec
tor Cu
rren
t
15
20
25
30
35
40
45
50
55
8
1
01
21
41
61
82
0
2
22
42
62
83
0
I
C
- A
mp
e
re
s
t
f i
- Nanoseconds
40
50
60
70
80
90
100
110
120
t
d
(o
ff)
-
Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 20
Ω
, V
GE
= 15V
V
CE
= 400V
T
J
= 150º
C
T
J
= 25º
C
Fi
g. 17. I
nducti
v
e Turn-of
f Sw
i
tchi
ng Ti
mes
v
s.
Juncti
on Temperat
ure
10
15
20
25
30
35
40
45
50
25
50
75
100
125
150
T
J
-
Degrees C
en
ti
gra
de
t
f i
- N
a
n
o
s
e
c
o
n
d
s
50
55
60
65
70
75
80
85
90
t
d(
off)
-
Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 20
Ω
, V
GE
= 15
V
V
CE
= 400V
I
C
= 30A
I
C
= 15A
IXYA15N65C3D1
IXYP15N65C3D1
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYA15N65C3D1
IXYP15N65C3D1
IXYS REF: IXY_15N65C3(31)7-30-13-A
Fi
g. 21. M
axi
mum Transi
ent Thermal
I
mpedance f
or Di
ode
0.1
1
10
0.0001
0.001
0.01
0.1
1
Pu
ls
e Widt
h
-
Secon
d
Z
(th)J
C
- ºC / W
F
i
g
.
21.
M
axi
mu
m Tra
n
si
en
t
I
mp
ed
an
ce f
o
r Di
o
d
e
3
Fi
g. 19. I
nducti
v
e Turn-o
n Sw
i
tchi
ng Ti
mes v
s.
Col
lect
or Cur
rent
0
10
20
30
40
50
60
8
1
0
1
21
4
1
61
8
2
02
2
2
42
6
2
83
0
I
C
-
Amper
es
t
r i
-
Nanosecond
s
10
12
14
16
18
20
22
t
d(o
n)
-
Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 20
Ω
, V
GE
= 15V
V
CE
= 400V
T
J
= 125º
C, 25º
C
Fi
g. 20. I
nducti
v
e Turn-
on Sw
i
tchi
ng Ti
mes v
s.
Juncti
on Temper
atur
e
10
20
30
40
50
60
70
25
50
75
100
125
150
T
J
-
Degrees C
ent
igr
a
de
t
r i
- Nanoseconds
13
14
15
16
17
18
19
t
d(o
n)
-
Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 20
Ω
, V
GE
= 15V
V
CE
= 400V
I
C
= 30A
I
C
= 15
A
Fi
g. 18. I
nducti
v
e Turn-o
n Sw
i
tchi
ng Ti
mes
v
s.
Gat
e Resi
stance
0
20
40
60
80
100
120
140
160
20
30
40
50
60
70
80
90
100
R
G
- Ohm
s
t
r i
-
Nanosecond
s
0
10
20
30
40
50
60
70
80
t
d(
on)
-
Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 150º
C, V
GE
= 15V
V
CE
= 400V
I
C
= 15
A
I
C
= 30
A
P1-P3
P4-P6
IXYP15N65C3D1
Mfr. #:
Buy IXYP15N65C3D1
Manufacturer:
Littelfuse
Description:
IGBT Transistors DISC IGBT XPT-GENX3
Lifecycle:
New from this manufacturer.
Delivery:
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IXYP15N65C3D1