NX3L4357 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 18 June 2012 13 of 21
NXP Semiconductors
NX3L4357
Low-ohmic single-pole triple-throw analog switch with enable input
12.2 Additional dynamic characteristics
[1] f
i
is biased at 0.5V
CC
.
Table 12. Additional dynamic characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); V
I
= GND or V
CC
(unless otherwise
specified); t
r
= t
f
2.5 ns.
Symbol Parameter Conditions T
amb
= 25 C Unit
Min Typ Max
THD total harmonic
distortion
f
i
=20Hzto20 kHz; R
L
=32; see Figure 17
[1]
V
CC
=1.4V; V
I
= 1 V (p-p) - 0.15 - %
V
CC
=1.65V; V
I
= 1.2 V (p-p) - 0.10 - %
V
CC
=2.3V; V
I
= 1.5 V (p-p) - 0.02 - %
V
CC
=2.7V; V
I
= 2 V (p-p) - 0.02 - %
V
CC
=4.3V; V
I
= 2 V (p-p) - 0.02 - %
V
CC
=3.0V; V
I
= 1 V (p-p); R
L
= 600 -0.01- %
f
(3dB)
3 dB frequency
response
R
L
=50; see Figure 18
[1]
port Y0, Y1 or Y2; V
CC
= 1.4 V to 4.3 V - 30 - MHz
port Y0, Y1 and Y2; V
CC
= 1.4 V to 4.3 V - 20 - MHz
iso
isolation (OFF-state) f
i
= 100 kHz; R
L
=50; see Figure 19
[1]
V
CC
= 1.4 V to 4.3 V - 90 - dB
V
ct
crosstalk voltage between digital inputs and switch;
f
i
= 1 MHz; C
L
= 50 pF; R
L
=50; see Figure 20
V
CC
= 1.4 V to 3.6 V - 0.21 - V
V
CC
= 3.6 V to 4.3 V - 0.30 - V
Xtalk crosstalk between switches;
f
i
= 100 kHz; R
L
=50;seeFigure 21
[1]
V
CC
= 1.4 V to 4.3 V - 90 - dB
Q
inj
charge injection f
i
= 1 MHz; C
L
= 0.1 nF; R
L
=1 M; V
gen
=0V;
R
gen
=0; see Figure 22
V
CC
= 1.5 V - 10 - pC
V
CC
= 1.8 V - 15 - pC
V
CC
=2.5V - 26 - pC
V
CC
=3.3V - 36 - pC
V
CC
=4.3V - 50 - pC
NX3L4357 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 18 June 2012 14 of 21
NXP Semiconductors
NX3L4357
Low-ohmic single-pole triple-throw analog switch with enable input
12.3 Test circuits
Fig 17. Test circuit for measuring total harmonic distortion
D
001aak772
f
i
R
L
GND
Sn
E
Z
V
IL
or V
IH
V
IL
V
CC
0.5V
CC
Yn
Adjust f
i
voltage to obtain 0 dBm level at output. Increase f
i
frequency until dB meter reads 3dB.
Fig 18. Test circuit for measuring the frequency response when channel is in ON-state
dB
001aak773
f
i
R
L
GND
Sn
E
Z
V
IL
or V
IH
V
IL
V
CC
0.5V
CC
Yn
Adjust f
i
voltage to obtain 0 dBm level at input.
Fig 19. Test circuit for measuring isolation (OFF-state)
dB
001aak774
f
i
R
L
GND
Sn
E
Z
V
IL
or V
IH
V
IH
V
CC
0.5V
CC
R
L
0.5V
CC
Yn
NX3L4357 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 18 June 2012 15 of 21
NXP Semiconductors
NX3L4357
Low-ohmic single-pole triple-throw analog switch with enable input
a. Test circuit
b. Input and output pulse definitions
V
I
may be connected to Sn or E.
Fig 20. Test circuit for measuring crosstalk voltage between digital inputs and switch
V
001aak775
R
L
C
L
V
O
GND
Sn
E
Z
V
IL
or V
IH
V
CC
0.5V
CC
R
L
0.5V
CC
Yn
G
V
I
logic
input
001aak776
on
V
O
V
ct
off off
logic input
(S0, S1, E)
f
i
may be connected to Y0, Y1 or Y2.
Fig 21. Test circuit for measuring crosstalk between switches
dB dB
001aak777
f
i
R
L
GND
S0, S1
E
Z
V
IL
or V
IH
V
IH
V
CC
0.5V
CC
R
L
0.5V
CC
R
L
0.5V
CC
Y2
Y1
Y0
3
2
1

NX3L4357GM,115

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
Analog Switch ICs ANLG SWT SP3T 3.3V
Lifecycle:
New from this manufacturer.
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