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NX3L4357GM,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21
NX3L4357 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 18 June 2012 16 of 21
NXP Semiconductors
NX3L4357
Low-ohmic single-pole triple-throw analog switch with enable input
a. Test circuit
b. Input and output pulse definitions
V
I
may be connected to Sn or E.
Definition: Q
inj
= V
O
C
L
.
V
O
= output voltage variation.
R
gen
= generator resistance.
V
gen
= generator voltage.
Fig 22. Test circuit for measuring charge injection
V
V
O
001aak778
C
L
R
L
V
CC
GND
V
gen
R
gen
G
V
I
Sn
E
Z
V
IL
Yn
001aak779
on
ΔV
O
V
O
off off
logic input
(S0, S1, E)
NX3L4357 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 18 June 2012 17 of 21
NXP Semiconductors
NX3L4357
Low-ohmic single-pole triple-throw analog switch with enable input
13. Package outline
Fig 23. Package outline SOT1049-3 (XQFN10)
References
Outline
version
European
projection
Issue date
IEC JEDEC JEITA
SOT1049-3 - - -
MO255
- - -
sot1049-3_po
10-12-06
11-03-30
Unit
(1)
mm
max
nom
min
0.5 0.05
0.00
0.25
0.20
0.15
0.33
0.28
0.23
1.65
1.55
1.45
2.1
2.0
1.9
1.5
0.48
0.43
0.38
0.1
A
Dimensions
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
XQFN10: plastic, extremely thin quad flat package; no leads;
10 terminals; body 1.55 x 2.00 x 0.50 mm
SOT1049-3
A
1
c
0.127
bb
1
DEe
0.5
e
1
LL
1
0.40
0.35
0.30
vw
0.05
y
0.05
y
1
0.05
0 1 2 mm
scale
D
E
terminal 1
index area
B A
X
C
y
C
y
1
detail X
A
A
1
c
1
4
5
10
b
b
1
L
L
1
terminal 1
index area
e
1
e
AC
B
Æ v
CÆ w
9
6
NX3L4357 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 18 June 2012 18 of 21
NXP Semiconductors
NX3L4357
Low-ohmic single-pole triple-throw analog switch with enable input
14. Abbreviations
15. Revision history
Table 13. Abbreviations
Acronym Description
CDM Charged Device Model
CMOS Complementary Metal-Oxide Semiconductor
ESD ElectroStatic Discharge
HBM Human Body Model
MM Machine Model
Table 14. Revision history
Document ID Release date Data sheet status Change notice Supersedes
NX3L4357 v.5 20120618 Product data sheet - NX3L4357 v.4
Modifications:
• Package outline drawing SOT1049-2 changed to SOT1049-3 (Figure 23).
NX3L4357 v.4 20111107 Product data sheet - NX3L4357 v.3
Modifications:
• Legal pages updated.
NX3L4357 v.3 20101228 Product data sheet - NX3L4357 v.2
NX3L4357 v.2 20100428 Product data sheet - NX3L4357 v.1
NX3L4357 v.1 20091019 Product data sheet - -
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NX3L4357GM,115

Mfr. #:
Buy NX3L4357GM,115
Manufacturer:
NXP Semiconductors
Description:
Analog Switch ICs ANLG SWT SP3T 3.3V
Lifecycle:
New from this manufacturer.
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