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VUB120-16NOX

P1-P3P4-P6P7-P8
VUB116-16NOXT
Ratings
XXXXXXXXXX yywwx
Logo UL Part number Date Code
2D Data Matrix
Location
Package
T
VJ
°C
M
D
Nm6
mounting torque
3
T
stg
°C125
storage temperature
-40
Weight g176
Symbol Definition typ. max.min.Conditions
virtual junction temperature
Unit
V V
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
6.0
12.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
200 A
per terminal
150-40
terminal to terminal
E2-Pack
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
0 25 50 75 100 125 150
10
2
10
3
10
4
10
5
R
[
]
Typ. NTC resistance vs. temperature
T
C
[°C]
50/60 Hz, RMS; I ≤ 1 mA
ISOL
VUB116-16NOXT 510755Box 6VUB116-16NOXTStandard
3000
3600
ISOL
threshold voltage
V0.8
mΩ
V
0 max
R
0 max
slope resistance *
4.5
1.1
17.9
1.31
8
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Rectifier Brake
IGBT
Brake
Diode
150 °C
* on die level
T = 25°
resistance
kΩ
5.25
K
VJ
3375
R
25
B
25/50
5
4.75
temperature coefficient
Symbol Definition typ.
max.min.Conditions Unit
Temperature Sensor NTC
IXYS reserves the right to change limits, conditions and dimensions.
20120207bData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
VUB116-16NOXT
Dimmensions w/o tolerances
acc. DIN ISO 2768-T1-m
NTC
19+20
1
10+11
~6+7
~4+5
~2+3
8+9 18 17 21+22
12 13
Outlines E2-Pack
IXYS reserves the right to change limits, conditions and dimensions.
20120207bData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
VUB116-16NOXT
0.001 0.01 0.1 1
200
300
400
500
600
23456789
1
100
1000
10000
0 1020304050
0
20
40
60
0 25 50 75 100 125 150 175
1 10 100 1000 10000
0.01
0.1
1
[A
2
s]
I
FSM
[A]
t[s]
P
tot
[W]
I
dAVM
[A]
T
amb
[°C]
t[ms]
0 25 50 75 100 125 150 175
0
20
40
60
80
100
120
140
I
dAV
[A]
Z
thJC
[K/W]
50Hz, 80% V
RRM
T
VJ
= 150°C
0.00.51.01.52.0
0
40
80
120
160
I
F
[A]
V
F
[V]
T
VJ
= 45°C
T
VJ
=150°C
T
VJ
= 45°C
T
VJ
=125°C
T
VJ
= 25°C
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
t[ms]
Fig. 3 I
2
t versus time per diode
Fig. 4 Power dissipation vs. direct output current and ambient temperature
T
C
[°C]
Fig. 5 Max. forward current vs.
case temperature
Fig. 6 Transient thermal impedance junction to case
R
ii
0.085 0.012
0.041 0.007
0.309 0.036
0.215 0.102
T
VJ
=150°C
R
thA
:
0.2 K/W
0.4 K/W
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
DC =
1
0.5
0.4
0.33
0.17
0.08
DC =
1
0.5
0.4
0.33
0.17
0.08
Rectifier
IXYS reserves the right to change limits, conditions and dimensions.
20120207bData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
P1-P3P4-P6P7-P8

VUB120-16NOX

Mfr. #:
Buy VUB120-16NOX
Manufacturer:
Littelfuse
Description:
IGBT Modules Standard Rectifier Bridge+Brake Unit
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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