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VUB120-16NOX

P1-P3P4-P6P7-P8
VUB116-16NOXT
0123
0
25
50
75
100
125
150
04080120160
0
4
8
12
16
01234
0
25
50
75
100
125
150
V
CE
[V]
I
C
[A]
Q
G
[nC]
V
GE
[V]
9V
11V
5678910111213
0
25
50
75
100
125
150
0 100 200 300
0
5
10
15
20
T
VJ
=125°C
13V
8 12162024
5
6
7
8
9
10
E
[mJ]
E
off
Fig. 1 Typ. output characteristics
V
CE
[V]
I
C
[A]
V
GE
=15V
17 V
19 V
Fig. 2 Typ. output characteristics
I
C
[A]
Fig. 3 Typ. tranfer characteristics
V
GE
[V]
Fig. 4 Typ. turn-on gate charge Fig. 5 Typ. switching energy
versus collector current
E
on
Fig. 6 Typ. switching energy
versus gate resistance
R
G
[ ]
E
[mJ]
I
C
[A]
E
off
V
GE
=15V
T
VJ
=25°C
T
VJ
=125°C
T
VJ
=25°C
T
VJ
=125°C
0.0001 0.001 0.01 0.1 1 10
0.001
0.01
0.1
1
t[s]
Z
thJC
[K/W]
Fig. 7 Typ. transient thermal impedance junction to case
I
C
= 75A
V
CE
= 600 V
R
G
=10
V
CE
=600V
V
GE
= ±15 V
T
VJ
= 125°C
E
on
I
C
=75A
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
Brake IGBT
IXYS reserves the right to change limits, conditions and dimensions.
20120207bData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
VUB116-16NOXT
200 600 10000 400 800
120
140
160
180
200
220
11.010.0100.0
0.01
0.1
1
04080120160
0.0
0.5
1.0
1.5
2.0
0 200 400 600 800 1000
0
20
40
60
80
100
120
0.0
0.2
0.4
0.6
0.8
1.0
1.2
200 600 10000 400 800
0
10
20
30
40
50
60
0001001
0
1
2
3
4
5
0123
0
10
20
30
40
50
60
70
80
K
f
T
VJ
[°C]
t[s]
V
FR
[V]
I
RM
[A]
Q
r
[μC]
I
F
[A]
V
F
id-]V[
F
/dt [A/μs]
t
rr
[ns]
Z
thJC
[K/W]
V
FR
t
rr
Fig. 1 Forward current I
F
vs. V
F
Fig. 2 Typ. reverse recovery charge
Q
r
versus -di
F
/dt
Fig. 3 Typ. peak reverse current
I
RM
versus -di
F
/dt
Fig. 4 Dynamic parameters
Q
r
,I
RM
versus T
VJ
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt
Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
Fig. 7 Transient thermal impedance junction to case
t
rr
[μs]
I
F
=60A
30 A
15 A
I
F
=60A
30 A
15 A
I
RM
Q
R
I
F
=60A
30 A
15 A
T
VJ
=125°C
V
R
=800V
T
VJ
=125°C
V
R
=800V
-di
F
/dt [A/μs]
T
VJ
=125°C
V
R
=800V
-di
F
/dt [A/μs]
-di
F
/dt [A/μs]
T
VJ
=125°C
I
F
=30A
T
VJ
= 125°C
25°C
iR
i
t
i
[K/W] [s]
1 0.465 0.0052
2 0.179 0.0003
3 0.256 0.0397
Brake Diode
IXYS reserves the right to change limits, conditions and dimensions.
20120207bData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
P1-P3P4-P6P7-P8

VUB120-16NOX

Mfr. #:
Buy VUB120-16NOX
Manufacturer:
Littelfuse
Description:
IGBT Modules Standard Rectifier Bridge+Brake Unit
Lifecycle:
New from this manufacturer.
Delivery:
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