ESD8040
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
I
PP
Maximum Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
R
DYN
Dynamic Resistance
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
Uni−Directional TVS
I
PP
I
PP
V
I
I
R
I
T
V
RWM
V
CL
V
BR
V
CL
R
DYN
R
DYN
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Conditions Min Typ Max Unit
Reverse Working Voltage V
RWM
I/O Pin to GND 3.3 V
Breakdown Voltage V
BR
I
T
= 1 mA, I/O Pins 1, 2, 4, 5, 7, 8, 10, 11 to GND
I
T
= 1 mA, I/O Pins 3, 6, 9, 13, 15, 17 to GND
4.0
5.5
5.5
6.5
V
Reverse Leakage Current I
R
V
RWM
= 3.3 V, I/O Pin to GND 1.0
mA
Clamping Voltage (Note 1) V
C
IEC61000−4−2, ±8 kV Contact See Figures 3 and 4 V
Clamping Voltage TLP
(Note 2)
See Figures 9 through 12
V
C
I
PP
= 8 A
I
PP
= −8 A
IEC 61000−4−2 Level 2 equivalent
(±4 kV Contact, ±4 kV Air)
9.2
−4.5
V
I
PP
= 16 A
I
PP
= −16 A
IEC 61000−4−2 Level 4 equivalent
(±8 kV Contact, ±15 kV Air)
12.0
−8.0
Dynamic Resistance R
DYN
I/O Pin to GND
GND to I/O Pin
0.33
0.45
W
Junction Capacitance C
J
V
R
= 0 V, f = 1 MHz between I/O Pins and GND 0.30 0.35 pF
1. For test procedure see Figures 7 and 8 and application note AND8307/D.
2. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z
0
= 50 W, t
p
= 100 ns, t
r
= 4 ns, averaging window; t
1
= 30 ns to t
2
= 60 ns.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
