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MP6K31TCR

P1-P3P4-P6P7-P7
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
4V Drive Nch + Nch MOSFET
MP6K31
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET
Features
1) Built-in G-S Protection Diode.
2) Small Surface Mount Package (MPT6).
3) Low voltage drive. (4V)
Application
Switching
Packaging specifications
Inner circuit
Package Taping
Code TR
Basic ordering unit (pieces) 1000
MP6K31 ○
Absolute maximum ratings (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Symbol Limits Unit
Drain-source voltage V
DSS
60 V
Gate-source voltage V
GSS
20 V
Continuous I
D
2A
Pulsed I
DP
8A
Continuous I
s
1.2 A
Pulsed I
sp
8A
2.0 W / TOTAL
1.4 W / ELEMENT
Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to +150 C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
P
D
Type
Source current
(Body Diode)
Drain current
Parameter
Power dissipation
(6) (4)(5)
(1) (3)(2)
(1) (2) (3)
(4)(5)(6)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
*2
*1
*1
MPT6
(Dual)
(1) (2) (3)
(6) (5) (4)
1/6
2010.09 - Rev.A
Data Sheet
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
MP6K31
　
Electrical characteristics (Ta = 25C)
<It is the same characteristics for Tr1 and Tr2.>
Symbol Min. Typ. Max. Unit
Gate-source leakage I
GSS
--10 AV
GS
=20V, V
DS
=0V
Drain-source breakdown voltage V
(BR)DSS
60 - - V I
D
=1mA, V
GS
=0V
Zero gate voltage drain current I
DSS
--1AV
DS
=60V, V
GS
=0V
Gate threshold voltage V
GS (th)
1.0 - 2.5 V V
DS
=10V, I
D
=1mA
- 210 290 I
D
=2A, V
GS
=10V
- 240 330 I
D
=2A, V
GS
=4.5V
- 255 350 I
D
=2A, V
GS
=4.0V
Forward transfer admittance l Y
fs
l 1.4 - - S I
D
=2A, V
DS
=10V
Input capacitance C
iss
- 110 - pF V
DS
=10V
Output capacitance C
oss
- 28 - pF V
GS
=0V
Reverse transfer capacitance C
rss
- 12 - pF f=1MHz
Turn-on delay time t
d(on)
-6-nsI
D
=1A, V
DD
30V
Rise time t
r
- 10 - ns V
GS
=10V
Turn-off delay time t
d(off)
- 20 - ns R
L
=30
Fall time t
f
-9-nsR
G
=10
Total gate charge Q
g
- 2.0 - nC I
D
=2A, V
DD
30V
Gate-source charge Q
gs
- 0.8 - nC V
GS
=5V
Gate-drain charge Q
gd
- 0.4 - nC
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
<It is the same characteristics for Tr1 and Tr2.>
Symbol Min. Typ. Max. Unit
Forward Voltage V
SD
- - 1.2 V I
s
=1.2A, V
GS
=0V
*Pulsed
Conditions
Conditions
m
Parameter
Parameter
Static drain-source on-state
resistance
R
DS (on)
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
2/6
2010.09 - Rev.A
Data Sheet
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
MP6K31
　
Electrical characteristic curves (Ta = 25C)
0
1
2
0 0.2 0.4 0.6 0.8 1
Drain Current : I
D
[A]
Drain-Source Voltage : V
DS
[V]
Typical Output Characteristics (Ⅰ)
V
GS
=2.5V
T
a
=25℃
pulsed
V
GS
=10.0V
V
GS
=4.0V
V
GS
=4.5V
V
GS
=2.8V
V
GS
=3.0V
0
1
2
0246810
Drain Current : I
D
[A]
Drain-Source Voltage : V
DS
[V]
Typical Output Characteristics (Ⅱ)
V
GS
=2.5V
T
a
=25℃
pulsed
V
GS
=10.0V
V
GS
=4.0V
V
GS
=4.5V
V
GS
=2.8V
V
GS
=3.0V
1000
10000
e
Resistance
Static Drain-Source On-State Resistance vs. Drain Current
T
a
=25℃
pulsed
1000
10000
Resistance
Static Drain-Source On-State Resistance vs. Drain Current
V
GS
=10V
pulsed
T
a
=125℃
T
a
=75℃
T
a
=25℃
T
a
=-25℃
10
100
1000
0.01 0.1 1 10
Static Drain-Source On-Stat
e
R
DS(
on) [mΩ]
Drain Current : I
D
[A]
V
GS
=4.0V
V
GS
=4.5V
V
GS
=10V
10
100
1000
0.01 0.1 1 10
Static Drain-Source On-State
R
DS
(on) [mΩ]
Drain Current : I
D
[A]
10
100
1000
10000
0.01 0.1 1 10
Static Drain-Source On-State Resistance
R
DS
(on) [mΩ]
Drain Current : I
D
[A]
Static Drain-Source On-State Resistance vs. Drain Current
V
GS
=4.5V
pulsed
T
a
=125℃
T
a
=75℃
T
a
=25℃
T
a
=-25℃
10
100
1000
10000
0.01 0.1 1 10
Static Drain-Source On-State Resistance
R
DS
(on) [mΩ]
Drain Current : I
D
[A]
Static Drain-Source On-State Resistance vs. Drain Current
V
GS
=4V
pulsed
T
a
=125℃
T
a
=75℃
T
a
=25℃
T
a
=-25℃
3/6
2010.09 - Rev.A
P1-P3P4-P6P7-P7

MP6K31TCR

Mfr. #:
Buy MP6K31TCR
Manufacturer:
ROHM Semiconductor
Description:
MOSFET Trans MOSFET N-CH 60V 2A 6-Pin MPT T/R
Lifecycle:
New from this manufacturer.
Delivery:
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