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MP6K31TCR

P1-P3P4-P6P7-P7
Data Sheet
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
MP6K31
　
0.01
0.1
1
10
0.01 0.1 1 10
Forward Transfer Admittance
Yfs [S]
Drain Current : I
D
[A]
Forward Transfer Admittance vs. Drain Current
V
DS
=10V
pulsed
T
a
=-25℃
T
a
=25℃
T
a
=75℃
T
a
=125℃
0.001
0.01
0.1
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Drain Currnt : I
D
[A]
Gate-Source Voltage : V
GS
[V]
Typical Transfer Characteristics
V
DS
=10V
pulsed
T
a
=125℃
T
a
=75℃
T
a
=25℃
T
a
=-25℃
1
10
Is [A]
Source Current vs. Source-Drain Voltage
V
GS
=0V
pulsed
T
a
=125℃
T
=
75
℃
400
500
600
t
ate Resistance
Ω
]
Static Drain-Source On-State Resistance vs.
Gate-Source Voltage
T
a
=25℃
pulsed
I
D
=2.0A
I
D
=1.0A
0.01
0.1
0.0 0.5 1.0 1.5 2.0
Source Current :
Source-Drain Voltage : V
SD
[V]
T
a
=
75
℃
T
a
=25℃
T
a
=-25℃
0
100
200
300
0246810
Static Drain-Source On-S
t
R
DS
(on) [m
Ω
Gate-Source Voltage : V
GS
[V]
1
10
100
1000
0.01 0.1 1 10
Switching Time : t [ns]
Drain Current : I
D
[A]
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
V
DD
≒30V
V
GS
=10V
R
G
=10Ω
T
a
=25℃
Pulsed
0
2
4
6
8
10
0 1 2 3 4 5
Gate-Source Voltage : V
GS
[V]
Total Gate Charge : Qg [nC]
Dynamic Input Characteristics
T
a
=25℃
V
DD
=30V
I
D
=2A
Pulsed
4/6
2010.09 - Rev.A
Data Sheet
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
MP6K31
　
1
10
100
1000
0.01 0.1 1 10
Capacitance : C [pF]
Drain-Source Voltage : V
DS
[V]
Typical Capacitance vs. Drain-Source Voltage
T
a
=25℃
f=1MHz
V
GS
=0V
C
iss
C
oss
C
rss
0.01
0.1
1
10
0.1 1 10 100
Drain Current : I
D
[ A ]
Drain-Source Voltage : V
DS
[ V ]
Maximum Safe Operating Area
T
a
=25℃
Single Pulse (1Unit)
Mounted on a ceramic board.
（30mm x 30mm x 0.8mm)
Operation in this area
is limited by R
DS(on)
(V
GS
= 10V )
P
W
= 100μs
P
W
= 1ms
P
W
= 10ms
DC Operation
1
R
esistance : r（t）
Normalized Transient Thermal Resistance v.s. Pulse Width
T
a
=25℃
Single Pulse
Mounted on a ceramic board.
（30mm × 30mm × 0.8mm)
Rth
(ch-a)
=89.3℃/W (1Unit)
Rth
(ch-a)
(t)=r(t)×Rth
(ch-a)
0.001
0.01
0.1
0.0001 0.01 1 100
Normalized Transient Thermal
R
Pulse width ： Pw （ s ）
5/6
2010.09 - Rev.A
Data Sheet
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
MP6K31
　
Measurement circuits
F
ig.1-1 Switching time measurement circu
it
VGS
RG
VD
S
D.U.T.
I
D
RL
VDD
Fig.1-2 Switching waveforms
90%
90% 90
%
10% 10%
50%
10%
50%
V
GS
Pulse width
V
DS
ton toff
tr
td(on)
tf
td(off)
Fig.2-2 Gate Charge Waveform
V
G
V
GS
Charge
Q
g
Q
gs
Q
gd
ig.2-1 Gate charge measurement circuit
V
GS
I
G(Const.)
V
D
D.U.T.
I
D
R
L
V
DD
6/6
2010.09 - Rev.A
P1-P3P4-P6P7-P7

MP6K31TCR

Mfr. #:
Buy MP6K31TCR
Manufacturer:
ROHM Semiconductor
Description:
MOSFET Trans MOSFET N-CH 60V 2A 6-Pin MPT T/R
Lifecycle:
New from this manufacturer.
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