NXP Semiconductors
PQMH13
NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ
PQMH13 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 4 November 2015 4 / 14
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
CBO
collector-base voltage open emitter - 50 V
V
CEO
collector-emitter voltage open base - 50 V
V
EBO
emitter-base voltage open collector - 5 V
positive - 30 VV
I
input voltage
negative - -5 V
I
O
output current - 100 mA
I
CM
peak collector current - 100 mA
P
tot
total power dissipation T
amb
≤ 25 °C [1] - 230 mW
Per device
P
tot
total power dissipation T
amb
≤ 25 °C [1] - 350 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
T
amb
(°C)
-75 17512525 75-25
aaa-007377
200
100
300
400
P
tot
(mW)
0
FR4 PCB, standard footprint
Fig. 2. Per device: Power derating curve
